• Journal of information and communication convergence engineering
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• 제9권6호
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• pp.721-724
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• 2011

Polymer base organic PN junction with various ion types was studied. Low-energy ion implantation technique(~keV) is very useful in physical doping on PPP(Polyparaphenylene) polymer. By double implantation, effective organic PN junction was achieved. The best obtained electrical I-V property was rectification ratio which was about 10000. However, still have problems in low junction current density.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.973-977
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• 2010

The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• 전자공학회논문지A
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• 제32A권2호
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• 대한지리학회지
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• 제33권3호
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• pp.355-364
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• 1998

하천 합류점의 하노형상을 파악하고 하도형상에 영향을 미치는 요소를 조사하기 위해 소형 수로실험을 실시했다. 합류하는 두 수류리 모삔트가 동일하면 할류후 하도는 합류각도를 이분하는 방향으로 늘어서기 때문에 초기하도의 배열에 따라 하도의 측방이동이 일어난다. 그 결과 합류후 하도의 형상은 합류의 평면형태 즉 대칭형, 점이형. 비대칭형에 따라 달라진다. 합류에 기인하는 가장 특징적인 하도혈상으로 하상 세굴부를 들 수 있다. 급경사의 양벽으로 둘러싸인 합류점의 세굴부는 기본적으로 합류각도에 의해 지배된다. 하천합류는 전통적으로 협화적이라고 표현되어 왔지만 불협화적 합류도 빈번하게 발생한다. 합류의 불협화에는 합류하천의 유량비뿐만 아니라 유사농도비도 관여한다. 따라서 불협화를 일으키는 최대요소로는 두 비를 고려한 수면폭당 단위유량비를 들 수 있다.

• Nuclear Engineering and Technology
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• 제28권3호
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• pp.280-289
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• 1996

The pressure drop of twelve fuel bundle string in the CANDU-6 fuel channel is equal to the sum of the eleven junction pressure losses, the bundle string entrance and exit pressure losses, the skin friction pressure loss, and other appendage pressure losses, where the junction loss is dependent on the bundle end faces and angular alignments of the junctions. The results of the single junction pressure drop tests in a short rig show that the most probable pressure drop of the eleven junctions was analytically equal to the eleven times of average pressure drop of all the possible single junction pressure drops, and also that the largest and smallest junction pressure drops across the eleven junctions probably occurred only with BA and BB type junctions, respectively, where A and B denote the bundle end sides with an end-plates on which a company monogram is stamped and unstamped, respectively.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.5-5
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• 2001

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.83.1-83.1
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• 2010

Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 춘계종합학술대회
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• pp.143-146
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• 2000

This paper presents a study on design for the k-junction of a feeder waveguide with an inductive wall using FDTD method. The feed structure consists of a single waveguide plated on the same layer as radiating waveguide and is characterized by the unit divider, railed a $\pi$-Junction. This $\pi$-Junction with an inductive wall splits part of the power into two branch waveguide through one coupling window, and can excite densely arrayed waveguide at equal phase and amplitude. The power dividing characteristics of a $\pi$ -Junction obtained by FDTD method are compared with one of Galerkin's method of moments. The scattering matrices a $\pi$ -junction calculated by FDTD method are realized.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.82-87
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• 2007

The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be effectively suppressed. Particularly, the effects of trap states at the metal-silicide/silicon interface of S/D junction were simulated by taking into account the tail distributions and the Gaussian distributions at the silicon band edge and at the silicon midgap, respectively. As a result of device simulation, the reduction of interfacial trap states with Gaussian distribution is more important than that of interfacial trap states with tail distribution for improving the metallic junction diodes and SB-MOSFET. It is that a forming gas annealing after silicide formation significantly improved the electrical properties of metallic junction devices.