• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.581-589
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• 2018

This work concentrated on the effect of different laser beams on the microstructure and dielectric properties of $BaTiO_3$ nanoparticles at different calcinations times during the gelling preparation step. The nanoparticles were prepared by the sol-gel method. A green (1000 mW, 532 nm) and red laser beam (500 mW, 808 nm), were applied vertically at the center of stirring raw materials. The samples were sintered at $1000^{\circ}C$ for 2, 4, and 6 h. X-ray diffraction (XRD) analysis showed that samples prepared under the green laser have the highest purity. The FT-IR spectra showed that the stretching and bending vibrations of TiO bond without any other bonds, which are compatible to the X-ray diffraction (XRD) results. Samples were characterized by transmission electron microscopy (TEM), Scan electron microscopy (SEM), and UV-Visible spectrophotometer. Characterization showed the samples prepared under the green laser to have the highest particle size (~ 50 nm) and transparency for all sintering durations. Laser beam effects on electrical characterization were studied. BT nanoparticles prepared under the green laser show the higher dielectric constant, which was found to increase with sintering temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• Carbon letters
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• v.12 no.1
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• pp.8-15
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• 2011

We study the relationships between the thermal emissivity of nuclear graphites (IG-110, PCEA, IG-430 and NBG-18) and their surface structural change by oxidation using scanning electron microscope and X-ray diffraction (XRD). The nonoxidized (0% weight loss) specimen had the surface covered with glassy materials and the 5% and 10% oxidized specimens, however, showed high roughness of the surface without glassy materials. During oxidation the binder materials were oxidized first and then graphitic filler particles were subsequently oxidized. The 002 interlayer spacings of the non-oxidized and the oxidized specimens were about $3.38{\sim}3.39{\AA}$. There was a slight change in crystallite size after oxidation compared to the nonoxidized specimens. It was difficult to find a relationship between the thermal emissivity and the structural parameters obtained from the XRD analysis.

• Journal of Magnetics
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• v.17 no.2
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• pp.96-99
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• 2012

The change of saturation magnetization in boronized low carbon microalloyed steels was investigated as a function of boronizing time. Specimens were boronized in an electrical resistance furnace for times ranging from 3 to 9 h at 1123 K. The metallurgical and magnetic properties of the specimens were investigated using optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and vibrating sample magnetometry (VSM). A boride layer with saw-tooth morphology consisting of FeB and $Fe_2B$ was observed on the surface, its thickness ranged from 63 ${\mu}m$ to 140 ${\mu}m$ depending on the boronizing time. XRD confirmed the presence of $Fe_2B$ and FeB on the surface. The saturation magnetization decreased with increasing boronizing time. This decrease was attributed to the increased thickness of the FeB and $Fe_2B$ phases. Cracks were observed at the FeB/$Fe_2B$ interfaces of the samples. The number of interfacial cracks increased with increasing boronizing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.406-407
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• 2008

For this study, Yttrium aluminum garnet (YAG) particles doped $Eu^{3+}$ ions were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all sintering temperature XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Eu powders had larger sizes with the increse in the sintering temperature. The grain size was about 50nm at $1000^{\circ}C$. The PL intensity of $Eu^{3+}$ has the line peaks of 598, 610, 632nm and has main peak at 591nm.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.743-745
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• 2015

Amorphous cobalt phosphates were synthesized with their distinct morphology by controlling the amount of base in the synthetic condition. The crystallinity and morphology of cobalt phosphates were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The prepared cobalt phosphates were applied as a heterogeneous catalyst for generating hydrogen gas from the hydrolysis reaction of sodium borohydride. We found that the catalyst prepared using the least amount of base condition at room temperature showed a plate shape with less than 10 nm thickness, which resulted in the best catalytic activity among all catalysts due to the large surface area.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.786-788
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• 2013

Molybdenum (Mo) thin film has high electrical conductivity and has been used for a back contact of CIGS thin film solar cell. Generally, the electrical conductivity and the adhesion between the substrate and the film is greatly affected by sputtering conditions such as sputtering power, working pressure, and substrate temperature. In this study, Mo films were deposited by DC magnetron sputtering technique. The influence of sputtering pressure on the electrical and structural properties of Mo films was investigated by using SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, Reflectance, Hall measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• Journal of Powder Materials
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• v.12 no.3
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• pp.214-219
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• 2005

In order to investigate the formation of AlN, mechanical alloying was carried out in $N_2$ and $NH_3$ atmosphere. Differential thermal analysis (DTA), x-ray diffraction (XRD) and chemical analysis were carried out to examine the formation behavior of aluminum nitrides. No diffraction pattern of AlN was observed in XRD analysis of the as-milled powders in $NH_3\;or\;N_2$ atmosphere. However, DTA and chemical analysis indicated that the precursors for AlN were formed in the Al powders milled in $NH_3$ atmosphere. The AlN precursors transformed to AlN after heat treatment at and above $600^{\circ}C$. It was considered that the reaction between Al and $NH_3$ was possible by the formation of fresh Al surface during mechanical alloying of Al powders.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.145-149
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• 2004

We have grown piezoelectric oxide films by RF magnetron sputtering using miscut substrates. Films were Brown on(001) $SrTiO_3$ substrates with miscut angles from 0 to 8 degrees toward the (100) direction. Films on high miscut substrates (>$4^{\circ}$) showed almost the pure perovskite phase in x-ray diffraction and were nearly stoichiometric. In contrast, films on exact (001) $SrTiO_3$ contained a high volume fraction of pyrochlore phases. A film on an $8^{\circ}$ miscut substrate exhibits a polarization hysteresis loop with a remnent polarization of 20$\mu$C/$\textrm{cm}^2$ at room temperature.