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Comparison of X-ray VCUG with RI VCUG for Diagnosing VUR in Children (소아의 방광 요관 역류 진단시 X-ray 배뇨성 방광 요도 조영술(X-ray VCUG)과 방사성 동위원소 배뇨성 방광 요도 조영술(RI VCUG)의 비교)

  • Hong Hyun-Soook;Choi Deuk-Lin;Kim Eun-Mi;Kim Sung-Jun
    • Childhood Kidney Diseases
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    • v.3 no.2
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    • pp.187-195
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    • 1999
  • Purpose : VUR is state where urine regurge from bladder to ureter and kidney. It is shown in about 1/3 of urinary tract infection patients and it is classified as grade I to V. We compared results from RI VCUG(Radiisotope voiding cystourethrography) and X-ray VCUG which used in diagnosing VUR in children, to evaluate which is better in diagnosing VUR in children. Methods : 41 Patients(19 males, 21 females), who visited Pediatric department, Soonchunhyang university Hospital from peroid of 1991. January to 1998. July for recurrent urinary tract infection or abnormalities in ultrasonogams, were enrolled in the study. The age ranged from 9 months to 17 years and mean age was 5 1/2 years. Both RI VCUG and X-ray VCUG were done and follow-up test of urine culture, renal ultrasonogram and RI VCUG were done every month, every 3 month and every 6 month, respectively to observe the disappearance of VUR and evaluated the prognosis. Results : 24 patients had taken RI VCUG and 17(70.1%) patients showed positive result. 22 patients had taken X-ray VCUG and 9(40.1%) patients showed findings of VUR. 17 patients had taken both tests and 14 patients showed positive result in RI VCUG and 6 of these patients also showed reflux in X-ray VCUG. 3 patients who showed negative in RI VCUG, showed negative also in X-ray VCUG. For prognosis, resolution and scar formation was shown in 8 patients each. Persistent VUR was shown in 6 patients and 2 of these patients VUR was corrected by operation, 1 patient showed decreased renal function, and 1 patient was not follwed up. 8 of 9 patients who showed findings of VUR on DMSA scan formed a scar and 8 patients who showed no findings of VUR didn't form a scar. Urine culture was positive in 17 of 19 patients with VUR. Positive rate in urine culture was higher than that of patients with no VUR who showed positivity in 15 of 21 patients for urine culture. E. coli was most common organism and the period free of UTI was 14 months in VUR patients and it was shorter compared to patients without VUR which was 26 months. Conclusion : In diagnosing VUR in children, the positive rate was higher in RI VCUG than X-ray VCUG. Therefore, in early diagnosis when VUR is suspicious but not shown in X-ray VCUG, RI VCUG should be done and it will help to make accurate diagnosis.

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Gelatinization Properties of Starch Dough with Moisture Content, Heating Temperature and Heating Time (수분함량, 가열온도 및 가열시간에 따른 전분 반죽의 호화특성)

  • Lee, Boo-Yong;Lee, Chang-Ho;Lee, Cherl-Ho
    • Korean Journal of Food Science and Technology
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    • v.27 no.3
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    • pp.428-438
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    • 1995
  • The gelatinization properties of corn and waxy corn starch doughs were examined at various moisture contents, heating temperatures and heating times. The onset temperatures of gelatinization with 1% CMC using Brabender Amylograph were $64^{\circ}C$ for both corn and waxy corn starch. In the gelatinization properties using DSC, onset temperature$(T_o)$, maximum peak temperature$(T_p)$, completion temperature$(T_c)$ and enthalpy of the corn starch were $68.15^{\circ}C,\;74.01^{\circ}C,\;85.65^{\circ}C$ and $3.2\;cal/gram$ respectively. While those of the waxy corn starch were $68.24^{\circ}C,\;75.43^{\circ}C,\;93^{\circ}C$ and $4.2\;cal/gram$ respectively. In enzymatic analysis, when the moisture content increased from 36% to 52% and heating temperature from $60^{\circ}C$ to $100^{\circ}C$, the gelatinization degree of starch dough increased from about 10% to about 62%. The gelatinization degree of waxy corn starch dough was $15{\sim}20%$ higher than that of corn starch dough under the same gelatinization conditions. The regression equations of gelatinization degree (Y) of starch dough in the range of $36{\sim}52%$ moisture content $(X_1)\;60{\sim}100^{\circ}C$ heating temperature $(X_2)\;and\;0{\sim}2.0$ min heating time $(X_3)$ were examined using response surface analysis. The regression equation of corn starch dough was: $Y=28.659+8.638\;X_}+15.675\;X_2+7.770\;X_3-1.620\;{X_1}^2+10.790\;X_1X_2-4.220\;{X_2}^2+0.510\;X_1X_3+1.980\;X_2X_3-6.850\;{X_3}^2\;(R^2=0.9714)$ and that of waxy corn starch dough was: $Y=32.617+12.535\;X_1+20.470\;X_2+8.608\;X_3+4.093\;{X_1}^2+13.550\;X_1X_2-4.467\;{X_2}^2+1.560\;X_1X_3+2.160\;X_2X_3-9.527\;{X_3}^2$\;(R^2=0.9621)$. As the moisture content, heating temperature and heating time increased, the reaction rate constant(k) of gelatinization increased. The greatest reaction rate constant was observed at initial 0.5 min heating time of 1st gelatinization stage. At the heating temperature of $90^{\circ}C$, gelatinization of starch dough was completed almost in the initial 0.5 min heating time. The reaction rate constant of waxy corn starch dough was higher than that of corn starch dough under the same gelatinization conditions. At the 52% moisture content, the regression equation between reaction rate constant(k) and heating temperature(T) for corn starch dough was $log\;k=11.1140-4.1226{\times}10^3(1/T)$ (r=-0.9520) and that of waxy corn starch dough was $log\;k=10.1195-3.7090{\times}10^3(1/T)$ (r=-0.9064).

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Implementation and Performance Analysis of the Pipelined Baugh-Wooley Multiplier (파이프라인 방식 Baugh-Wooley 승산기의 구현과 성능 분석)

  • 한강룡;최정필;송호정;황인재;송기용
    • Proceedings of the Korean Information Science Society Conference
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    • 2001.10c
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    • pp.46-48
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    • 2001
  • 본 논문에서는 Baugh-Wooley 승산 알고리즘을 '8x8-bit 15 stage 파이프라인 배열 숭산기', '8x8-bit 2 stage 파이프라인 배열 숭산기', '순수 조합 논리 배열 승산기'의 방식으로 FPGA상에서 구현하였으며, 각 구현방식의 성능을 비교 분석하였다.

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Microstructure and Third Order Optical Nonlinearities of Ion-Implanted and Thermally Annealed $Cu-SiO_2$ Thin Films

  • 채이;이민영;김현경;문대원
    • Bulletin of the Korean Chemical Society
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    • v.18 no.8
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    • pp.886-889
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    • 1997
  • The crystal structure and optical properties of copper nanoparticles, prepared in fused silica by ion-implantation and subsequent heat-treatment, were characterized by X-ray, TEM, linear absorption, and degenerate four-wave mixing (DFWM) technique. The X-ray data show fcc lattice structure of the nanocrystals and their size was measured as 8-20 nanometer by high resolution TEM. Using DFWM, the third-order nonlinear optical coefficient of the Cu-SiO2 thin films was measured as 0.4-1.1×10-8 esu in the surface plasmon resonance absorption region (540-570 nm).

Development of X-ray Micro Computed Tomography and Applications (미세 X선 단층촬영 기법의 개발과 적용)

  • Kim, Seung-Gon;Lim, Jae-Hong;Kim, Bo-Heum;Lee, Eui-Jae;Lee, Sang-Joon
    • Journal of the Korean Society of Visualization
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    • v.8 no.2
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    • pp.45-50
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    • 2010
  • The objective of this study is to elucidate the feasibility of synchrotron X-ray micro CT as a non-destructive imaging method to visualize the three-dimensional morphological structures of biological and non-biological samples. The experiments were conducted in 7B2 X-ray micro CT beamline in Pohang Accelerate Laboratory (PAL). A rotational 3-axis stage was specially designed for $0^{\circ}-180^{\circ}$ scanning of test samples. Preliminary tests were performed for opaque samples including a mosquito head, a plant seed and gas diffusion layer (GDL) of polymer electrolyte fuel cell to verify the feasibility of the X-ray micro CT. It visualized clearly the internal structure of all the test samples, supporting its usefulness.

Structural Modulation in the 2212 Phase of Bi-Sr-Ca-Cu-O Superconductors (Bi계 산화물 초전도체 2212상에서의 구조변조)

  • 신재수;권태송;윤상원;이창희;노기용
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.360-364
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    • 2001
  • 고상반응법(solid-state reaction)으로 산화물 초전도체 Bi$_{2+x}$ Sr$_{1.8}$ $CaCu_2$$O_{8+\delta}$(-0.2$\leq$x$\leq$0.2)을 제조하여 조성변화에 따른 산소량과 Bi 이온의 하전가(valence)가 구조변조의 주기에 미치는 영향을 조사하였다. 2212상의 단일상 고용한계는 -0.1$\leq$x$\leq$0.1 영역이었다. 이 영역에서 x의 증가에 따라 격자상수 c는 감소를 보이며, 온셋 임계온도 Tc$^{on}$ 과 산소량은 증가하는 경향을 보였다. 또한, Bi 이온의 하전기와 구조변조의 주기는 단일상 고용한계 영역 내에서 x의 증가에 따라 감소하는 경향을 보이고 있다. 구조변조의 주기는 산소량이 증가함에 따라 감소하고 Bi 이온의 하전가 증가에 따라 증가함을 보였다. 즉, 산소의 절대량과 Bi 이온의 하전가에 따라 구조변조의 주기가 변화하는 것을 알 수 있었다.

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Zr 신합금에서 열처리변수가 부식과 미세조직에 미치는 영향

  • 백종혁;김선재;김경호;최병권;정용환;김인섭
    • Proceedings of the Korean Nuclear Society Conference
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    • 1998.05b
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    • pp.142-147
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    • 1998
  • 핵연료피복관의 부식성능은 합금원소의 조성에 매우 민감하지만 열처리변수에 따라서도 크게 좌우되므로 열처리변수가 Zr 신합금의 부식저항성과 미세조직에 미치는 영향을 조사하였다. Zr-Nb-Sn-Fe-Cr 조성을 갖는 합금을 제조하여 열처리면수($\Sigma$A)를 7.7x$10^{-l9}$~5.3x$10^{-17}$ hr로 제어한 후 400 $^{\circ}C$/10.3 MPa 분위기의 autoclave를 이용하여 부식시험을 실시 하였다. 열처리변수($\Sigma$A)가 증가함에 따라서 부식저항성은 감소하였으며 열처리변수의 값이 7.7x$10^{-l9}$와 8.8x$10^{-l9}$ hr일 때 부식저항성은 매우 우수하였다. 천이후 부식속도에 미치는 열처리변수의 영향은 무게증가량에 미치는 영향과 동일한 경향을 나타냈으며 $\Sigma$A가 1.0x$10^{-18}$ hr이하에서 매우 낮은 부식속도를 보였다. 석출물 크기의 증가는 부식저항성을 감소시키는 것으로 관찰되었다. 따라서 우수한 부식저항성을 갖는 Zr 신합금을 개발하기 위해서는 중간 열처리 온도를 적절히 조절하여 석출물의 크기를 0.05 $\mu$m이하로 제어하여야 한다.다.

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이중 입출력 메모리를 이용한 새로운 영상입력 장치의 설계 및 제작에 관한 연구

  • 오영수;서일홍;변증남
    • 전기의세계
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    • v.36 no.3
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    • pp.190-204
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    • 1987
  • 본고에서는 이중입출력 메모리(Dual-Port RAM)를 이용한 영상 입력장치(Image Memory)의 설계 및 그 제어 신호 발생기에 대하여 논하였다. 이중 입출력 메모리 소자인 TMS4161은 기존의 표준 64K x 1DRAM Port와 256bit의 내부적 Shift REgister와 연결된 Serial Port가 있어서, 실시간 영상 처리 및 그래픽 용으로 사용하기에 적합하나, 그 사용에 있어서 가장 어려운 문제로 제안된 주소 신호 발생기 및 요구중재기에 대한 해결 방안을 제시하였다. 또한 서로 독립적인 두개의 입출력 장치가 있다는 장점을 이용하여 하드웨어에 의한 실시간 처리도 가능한 구조로 쉽게 확장할 수 있어서 소프트웨어에 의한 실시간 처리로 가능하리라 사료된다. 앞으로는 512x512x8의 영상 메모리 구조 뿐만 아니라 1024x1024x8의 영상메모리 구조에 대하여 더욱 연구할 필요가 있다고 본다.

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Properties of YIG Thick Films Prepared by Screen-Printing (스크린 프린트법에 의해 제조된 YIG계 후막의 특성)

  • 이태경;남중희;오재희;이재춘;최승철
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.1001-1007
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    • 2000
  • 스크린 프린트법으로 MMIC(Monolithic Microwave Integrated Circuit)용 YIG 후막을 제조하였고, YIG의 조성과 프린트 조건의 변화가 다결정 $Y_{3-x}$C $a_{x}$ F $e_{5-x}$Z $r_{x}$ $O_{12}$ (x=0~0.3) 후막의 미세구조 및 자기적 특성에 미치는 영향을 고찰하였다. $Ca^{2+}$와 Z $r^{4+}$ 의 치환 첨가량이 0.2인 $Y_{2.8}$ C $a_{0.2}$F $e_{4.8}$ Z $r_{0.2}$ $O_{12}$ 조성의 paste로 제조된 YIG 후막의 경우, 포화 자화값이 최대를 나타내었으며, 강자성 공명 흡수선 폭은 최소를 나타내었다. 또한, YIG 후막의 두께 및 소결 유지시간 등의 제조조건을 제어함에 따라 치밀화 및 자기 특성이 향상됨을 확인할 수 있었다.다.다.

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Passivation Properties of SiNx Thin Film for OLEO Device (SiNx 박막에 의한 OLED 소자의 보호막 특성)

  • Ju Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.758-763
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    • 2006
  • We has been studied the thin film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation properties of the passivation layer materials, we have carried out the fabrication of green light emitting diodes with ultra violet(UV) light absorbing polymer resin, $SiO_2,\;and\;SiN_x$, respectively. From the measurement results of shrinkage properties according to the exposure time to the atmosphere, we found that $SiN_x$ thin film is the best material for passivation layer. We have investigated the emission efficiency and life time of OLED device using the package structure of $OLED/SiN_x/polymer$ resin/Al/polymer resin. The emission efficiency of this OLED device was 13 lm/W and life time was about 2,000 hours, which reach 95 % of the performance for the OLED encapsulated with metal.