• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.313-319
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• 2012

In this work, the electroplating of copper was introduced on PAN-based carbon fibers for the enhancement of mechanical interfacial strength of carbon fibers-reinforced composites. The surface properties of carbon fibers were determined by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and contact angle measurements. Its mechanical interfacial properties of the composites were studied by interlaminar shear strength (ILSS) and critical stress intensity factor ($K_{IC}$). From the results, it was found that the mechanical interfacial properties of Cu-plated carbon fibers-reinforced composites (Cu-CFRPs) enhanced with increasing the Cu plating time, Cu content and COOH group up to Cu-CFRP-30. However, the mechanical interfacial properties of the Cu-CFRPs decreased dramatically in the excessively Cu-plated CFRPs sample. In conclusion, the presence of Cu particles on carbon fiber surfaces can be a key factor to determine the mechanical interfacial properties of the Cu-CFRPs, but the excessive Cu content can lead the failure due to the interfacial separation between fibers and matrices in this system.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.439-444
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• 2012

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

• Korean Chemical Engineering Research
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• v.43 no.3
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• pp.401-406
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• 2005

In this work, the effect of chemical treatment of multiwalled carbon nanotubes (MWNTs) on glass transition temperature (Tg), thermal stability, and dynamic viscoelastic behaviors of MWNTs-reinforced epoxy matrix composites has been studied by differencial scanning calorimeter (DSC), thermogravimetric analysis (TGA), and dynamic mechanical analysis (DMA) measurements. The MWNTs were chemically treated with 35 wt％ $H_3PO_4$ (A-MWNTs) or 35 wt％ KOH (B-MWNTs) solutions and the changes of surface properties of chemically treated MWNTs were examined by pH, acid and base values, Fourier transfer-infrared spectroscopy (FT-IR), and x-ray photoelectron spectroscopy (XPS) analyses. The chemical treatments based on acid and base reactions led to a significant change of surface characteristics and chemical compositions of the MWNTs, especially A-MWNTs/epoxy composites had higher thermal stability and dynamic viscoelastic properties than those of B-MWNTs and non-treated MWNTs/epoxy composites. These results were probably due to the improvement of interfacial bonding strength, resulting from the acid-base interaction and hydrogen bonding between the epoxy resins and the MWNT fillers.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.15-22
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• 2023

Recent studies have actively investigated ways to improve the economic feasibility and efficiency of the Fischer-Tropsch process by increasing the yields of the monocyclic aromatic compounds (BTEX). In this study, ethylene was selected as a model of F-T-derived hydrocarbons, and the ethylene-to-aromatics (ETA) reaction was investigated according to changes in acid characteristics, mesopores, and crystallinity of HZSM-5 (HZ5). Fluorinated HZ5 was prepared by calcination followed by impregnation of an aqueous NH₄F solution having different molar concentrations in HZ5, and the structural and chemical properties of F/HZ5 were investigated through Brunauer-Emmett-Teller (BET), solid-state nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), NH₃-temperature-programmed desorption (TPD), and pyridine-IR spectroscopy. The ETA reactions were performed at 673 K under 0.1 MPa, and fluorinating HZ5 by an aqueous NH₄F solution of 0.17 M improved ethylene conversion, BTEX selectivity, and catalytic stability due to acidity, mesopore fraction, and crystallinity.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.403-408
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• 2012

In this study, the homogenous Pd nanoparticles (Pd NPs) were first prepared with bayberry tannin (BT) as the stabilizers. Subsequently, the obtained bayberry tannin-stabilized Pd nanoparticles (BT-Pd) were immobilized onto ${\gamma}-Al_2O_3$ to prepare heterogeneous ${\gamma}-Al_2O_3$-BT-Pd catalysts. Fourier Transformation Infrared Spectrum (FTIR) and X-ray Photoelectron Spectroscopy (XPS) analyses confirmed that the Pd NPs were well stabilized by the phenolic hydroxyl groups of BT. Transmission Electron Microscopy (TEM) observation indicated that the diameter of the Pd NPs can be effectively controlled in the range of 4.2-16.0 nm by varying the amount of BT. It is found that the ${\gamma}-Al_2O_3$-BT-Pd catalysts exhibit highly activity for various olefin hydrogenations. For example, the initial TOF (turnover frequency) of the ${\gamma}-Al_2O_3$-BT-Pd in the allyl alcohol hydrogenation is as high as $12804 mol{\cdot}mol^{-1}{\cdot}h^{-1}$. Furthermore, the ${\gamma}-Al_2O_3$-BT-Pd can be reused 5 times without significant loss of activity, exhibiting a superior reusability as compared with conventionally prepared ${\gamma}-Al_2O_3$-Pd catalysts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.209-209
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• 2009

ITO 박막은 박막 태양전지, 유기 태양전지뿐만 아니라 유연한 디스플레이, 발광다이오드와 같은 광학적 장치에 투명한 전극으로써 널리 사용된다. 글라스나 플라스틱 기판위에 형성된 투명 전극은 식각을 통하여 전기회로를 구성한다. 또한 식각 특성을 개선할 필요가 있다. 이 연구에서 우리는 유리 기판위에 코팅된 ITO 박막을 유도결합 $BCl_3/Ar$ 플라즈마를 이용하여 식각하였다. ITO 박막은 RF 마그네트론 스퍼터링을 사용해 200 $^{\circ}C$에서 비알칼리 글라스 위에 증착하였고 ITO 박막의 총 두께는 약 250 nm 이었다. 또한 전기 전도성은 $4.483{\times}10^{-4}{\Omega}cm$, 캐리어 농도는 $3.923{\times}10^{20}cm^{-3}$이고, 홀 이동도는 $3.545{\times}10cm^{-2}/Vs$이었다. Ar 플라즈마에 $BCl_3$ 가스를 첨가시키면서 가스 비율에 따른 ITO의 식각 속도와 ITO와 PR과의 선택비를 측정하였다. 최대 식각 속도는 $BCl_3$(25%)/Ar(75%), 500 W의 RF power, -200 V의 DC-bias voltage, 그리고 2 pa의 공정압력일 때 588 nm/min이었고 선택비는 0.43으로 다소 낮게 측정되었다. 식각된 표면의 화학적 반응은 엑스선 광전자 분광법 (X-ray Photoelectron Spectroscopy)을 사용해 조사되었다. 그리고 식각된 표면의 거칠기는 원자현미경 (Atomic Force Microscopy)을 사용해 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.