• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.4
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• pp.381-388
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• 2000

Ceramic foam prepared with cordierite as a starting material by foam method was tested to evaluate the feasibility as a filter for the dust collection in hot gas. Two different types of agents Benzethonium chloride (BZTC, C27H42NO2Cl) and Sodium Lauryl Sulfate(SLS, CH3(CH2)11OSO3Na) were used as foaming agents in foaming process. Porosityof ceramic foam was about 80% and mean pore size were 100${\mu}{\textrm}{m}$ for SLS agent and 200 ${\mu}{\textrm}{m}$ for BZTC. It was observed that ceramic foam was composed of continuous macro-pore structure with opening windows interconnecting macro-pores. The surface of ceramic foam support of was coated with cordierite particles ranged from 20${\mu}{\textrm}{m}$ to 50${\mu}{\textrm}{m}$ Meso-pore size in the coating layer on ceramic foam was below 10${\mu}{\textrm}{m}$. While air permeability of the support increased with increasing macro-pore size coated ceramic filters showed a constant permeability without regard to the macro-pore size of the support. The permeabuilities of support varied in the range of 600$\times$10-13m2 to 1000$\times$10-13m2. For the case of coated ceramic filter it was about 200$\times$10-13m2. As a result of particle trapping test by using fly ash the particle removal efficiency was over the 99.9%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.109-112
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• 1998

SAW filters of transversal type were fabricated on some piezoelectric substrate of the LN 128 $^{\circ}$ Y-X waters through the simulation in which the number of IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 1.63$\mu\textrm{m}$, 1.239$\mu\textrm{m}$, respectively. Titanium thin films having different thicknesses were introduced between the Al electrode and the substrate for improving the power resistance strength due to its high temperature durability and good adhesion characteristics. All of specimens showed similar insertion loss results, which means the possibility of introducing the Ti layer though it is known to have a higher resistivity leading to a worse insertion loss result. Ti inserted specimens had a better power durability than that of pure Al electrode though their thickness had no effect on the performance.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.406-412
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• 1995

A n-CdS thin films were evaporated by thermal evaporation method and their structure, optical transmission spectra and electrical characteristics were investigated. The photovoltaic characteristics of solar cells which were fabricated in optimum conditions measured. The evaporated CdS thin films showed in hexagonal structure and above 80% of optical transmission spectra regardless of impurity doping. The high quality thin films could be obtained at 150.deg. C temperature of substrate, which is useful for solar cell window layer with low resistivity of 6*10$\^$-2/(.ohm.-cm) by In doping We measured the electrical and optical characteristics of the n-CdS/p-InP heterojunction solar cells. The most efficient photovoltaic characteristics of heterojunction solar cells had the open circuit voltage of 0.66V, short circuit current density of 13.85mA/cm$\^$2/, fill factor of 0.576 and conversion efficiency of 8.78% under 60mW/cm$\^$2/ illumination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.73-74
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• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.12-13
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• 2006

$Ga_2O_3$ is associated with the fabrication of thin window layer of solar cell. Usually, $Ga_2O_3$ is synthesized from Ga-metal oxidation method and GaN mono-crystal heat treatment method. We synthesized $Ga_2O_3$ powder using two methods and analyzed powder using latter method compared with powder by former method. XPS, XRD, IR analysis are conducted. XPS result, surface of GaN powder is almost oxidized to $Ga_2O_3$ at $1124^{\circ}C$ heat treatment and XRD and IR result, the inside of GaN powder is dramatically oxidized at $1124^{\circ}C{\sim}1300^{\circ}C$.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.1
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• pp.16-27
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• 2012

In multi-interface multi-channel(MIMC) based tactical ad hoc networks, QoS support for required operational capacity is one of the main challenging issues for multi-hop transmissions. To support QoS in such a harsh environment, we propose a novel MAC scheme to minimize multi-hop as well as per-hop delay. The current IEEE 802.11 MAC protocols should contend to reserve the channel resource at every hop by each sender. The every-hop channel contention results in a degradation of end-to-end delay for multi-hop transmissions. The basic idea of our scheme is to make a "multi-hop reservation" at the MAC layer by using the modified RTS frame. It contains additional information such as destination information, packet priority, and hop count, etc. In addition, we differentiate the contention window area according to the packet priority and the number of hops to deliver packets in the predefined allowed latency. Our scheme can minimize the multi-hop delay and support the QoS of the critical data in real time(i.e., VoIP, sensing video data, Video conference between commanders). Our simulation study and numerical analysis show that the proposed scheme outperforms the IEEE 802.11 MAC.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.7
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• pp.3446-3464
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• 2017

Backoff mechanism serves as one of the key technologies in the MAC-layer of wireless mobile networks. The traditional Binary Exponential Backoff (BEB) mechanism in IEEE 802.11 Distributed Coordination Function (DCF) and other existing backoff mechanisms poses several performance issues. For instance, the Contention Window (CW) oscillations occur frequently; a low delay QoS guarantee cannot be provided for real-time transmission, and services with different priorities are not differentiated. For these problems, we present a novel Multi-Priority service differentiated and Adaptive Backoff (MPAB) algorithm over IEEE 802.11 DCF for wireless mobile networks in this paper. In this algorithm, the backoff stage is chosen adaptively according to the channel status and traffic priority, and the forwarding and receding transition probability between the adjacent backoff stages for different priority traffic can be controlled and adjusted for demands at any time. We further employ the 2-dimensional Markov chain model to analyze the algorithm, and derive the analytical expressions of the saturation throughput and average medium access delay. Both the accuracy of the expressions and the algorithm performance are verified through simulations. The results show that the performance of the MPAB algorithm can offer a higher throughput and lower delay than the BEB algorithm.