Transactions on Electrical and Electronic Materials
- Volume 1 Issue 1
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- Pages.40-44
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- 2000
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$ (SBT) Materials
- You, In-Kyu (Micro-Electronics Technology Lab., ETRI) ;
- Lee, Won-Jae (Micro-Electronics Technology Lab., ETRI) ;
- Yang, Il-Suk (Micro-Electronics Technology Lab., ETRI) ;
- Yu, Byoung-Gon (Micro-Electronics Technology Lab., ETRI) ;
- Cho, Kyoung-Ik (Micro-Electronics Technology Lab., ETRI)
- Published : 2000.03.01
Abstract
Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of