• Title/Summary/Keyword: Window layer

Search Result 352, Processing Time 0.029 seconds

A Case of Unilateral Focal Pigmented Paravenous Retinochoroidal Atrophy (단안에 국소적으로 발현된 색소정맥옆망막맥락막 위축 1예)

  • Park, Hyo Song;Yang, Jong Yun;Park, Hyun Ju
    • Journal of The Korean Ophthalmological Society
    • /
    • v.59 no.12
    • /
    • pp.1190-1194
    • /
    • 2018
  • Purpose: We report a case of unilateral, focal, pigmented paravenous retinochoroidal atrophy (PPRCA). Case summary: A 46-year-old female visited our clinic in complaint of a vague problem with her right eye identified during a general medical examination. The visual acuity (without correction) of both eyes was 1.0. Slit-lamp examination of both eyes revealed no specific signs. Fundus examination of the right eye revealed focal, bony-spicule-shaped retinochoroidal atrophy with pigmentation along the course of the superior retinal vein. A fundus autofluorescence examination revealed principally hypofluorescence with some hyperfluorescence at the margin of the atrophic retinochoroidal lesion. Optical coherence tomography revealed mixed clumping and atrophy of the retinal pigment epithelium (RPE) layer and thinning of the choriocapillaris layer. Fluorescence angiography revealed a window defect and blockage at the site of the lesion (the fluorescent material did not enter the lesion). The site of the window defect was in correlation with the atrophic RPE region. The site of the blockage at lesion also matched with the site of the regional pigment clumping. No definite leakage was observed. Conclusions: To the best of our knowledge, this is the first case of unilateral focal PPRCA reported from Korea.

An Improvement of Performance for Data Downstream in IEEE 802.11x Wireless LAN Networks (IEEE 802.11x 무선 랜에서의 데이터 다운스트림 성능 향상)

  • Kim, Ji-Hong;Kim, Yong-Hyun;Hong, Youn-Sik
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.43 no.11 s.353
    • /
    • pp.149-158
    • /
    • 2006
  • We proposed a method for improving a performance of TCP downstream between a desktop PC as a fixed host and a PDA as a mobile host in a wired and wireless network based on IEEE 802.11x wireless LAN. With data transmission between these heterogeneous terminals a receiving time during downstream is slower than that during upstream by 20% at maximum. The reason is that their congestion window size will be oscillated due to a significantly lower packet processing rate at receiver compared to a packet sending rate at sender. Thus it will cause to increase the number of control packets to negotiate their window size. To mitigate these allergies, we proposed two distinct methods. First, by increasing a buffer size of a PDA at application layer an internal processing speed of a socket receive buffer of TCP becomes faster and then the window size is more stable. However, a file access time in a PDA is kept nearly constant as the buffer size increases. With the buffer size of 32,768bytes the receiving time is faster by 32% than with that of 512bytes. Second, a delay between packets to be transmitted at sender should be given. With an inter-packet delay of 5ms at sender a resulting receiving time is faster by 7% than without such a delay.

The retrospective study of survival rate of implants with maxillary sinus floor elevation (상악동 거상술을 동반한 상악구치부에 식립된 임플란트 생존율에 대한 후향적 연구)

  • Kim, Beom-Jin;Lee, Jae-Hoon
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
    • /
    • v.36 no.2
    • /
    • pp.108-118
    • /
    • 2010
  • Introduction: Maxillary posterior region, compared to the mandible or maxillary anterior region, has a thin cortical bone layer and is largely composed of cancellous bone, and therefore, it is often difficult to achieve primary stability. In such cases, sinus elevation with bone graft is necessary. Materials and Methods: In this research, 121 patients who had implant placement after bone graft were subjected to a follow-up study of 5 years from the moment of the initial surgery. The total survival rate, 5-year cumulative survival rate and the influence of the following factors on implant survival were evaluated; the condition of the patient (sex, age, general body condition), the site of implant placement, diameter and length of the implant, sinus elevation technique, closure method for osseous window, type of prosthesis and opposing teeth. Results: 1. The 5-year cumulative survival rate of total implants was 90.5%, there was no significant difference between sex, age, the site of implant placement, diameter and length of the implant, sinus elevation technique, and the type of opposing teeth. 2. Patients with diabetes mellitus < osteoporosis and smooth-surfaced machined group < hydroxyapatite (HA)-treated group and homogenous demineralized freeze dried allogenic bone (DFDB) bone graft only group had significantly lower survival rate. 3. With less than 4 mm of residual alveolar ridge height, lateral approach without closing the osseous window resulted in a significantly lower survival rate. 4. Restoration of a single implant showed a significantly lower survival rate, compared to cases where the superstructure was joined with several implants in the area. Conclusion: Patients with diabetes or osteoporosis need longer period of time for osseointegration compared to the normal, and the dentists must be prudent when choosing a surface treatment type and the bone graft material. Also, as the vertical dimension of the residual alveolar ridge can influence the result, staged implant placement should be considered when it seems difficult for the implant to gain primary stability from the residual bone with less than 4 mm of vertical dimension. It is recommended to obdurate the bone window and that the superstructure be connected with several impants in the peripheral area.

Electrochemical treatment of wastewater using boron doped diamond electrode by metal inter layer

  • KIM, Seohan;YOU, Miyoung;SONG, Pungkeun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.251-251
    • /
    • 2016
  • For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

  • PDF

Structural and Optical Properties of ZnS Thin Films Fabricated by Using RF Sputtering and Rapid Thermal Annealing Process for Buffer Layer in Thin Film Solar Cells (박막태양전지 버퍼층 적용을 위해 RF 스퍼터링 및 급속열처리 공정으로 제작한 황화아연 박막의 구조적 광학적 특성)

  • Park, Chan-Il;Jun, Young-Kil
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.15 no.4
    • /
    • pp.665-670
    • /
    • 2020
  • Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

Real-Time Rate Control with Token Bucket for Low Bit Rate Video (토큰 버킷을 이용한 낮은 비트율 비디오의 실시간 비트율 제어)

  • Park, Sang-Hyun;Oh, Won-Geun
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.10 no.12
    • /
    • pp.2315-2320
    • /
    • 2006
  • A real-time frame-layer rate control algorithm with a token bucket traffic shaper is proposed for low bit rate video coding. The proposed rate control method uses a non-iterative optimization method for low computational complexity, and performs bit allocation at the frame level to minimize the average distortion over an entire sequence as well as variations in distortion between frames. In order to reduce the quality fluctuation, we use a sliding window scheme which does not require the pre-analysis process. Therefore, the proposed algorithm does not produce time delay from encoding, and is suitable for real-time low-complexity video encoder. Experimental results indicate that the proposed control method provides better visual and PSNR performances than the existing rate control method.

A Study on the Transmittance, Heat-Resistance, and Mechanical Properties of SiO2, TiO2 Anti-Reflective Single Layers Deposited on Sapphire Substrate by MOCVD (금속유기화학증착법으로 사파이어 기판에 증착된 단층 SiO2, TiO2 저반사막의 광 투과율, 내열성, 기계적 특성에 관한 연구)

  • Shim, Gyu-In;Eom, Hyengwoo;Kang, Hyung;Choi, Se-Young
    • Journal of the Korea Institute of Military Science and Technology
    • /
    • v.17 no.5
    • /
    • pp.672-679
    • /
    • 2014
  • To improve sensing capability of infrared, heat-resistance and mechanical properties, the $SiO_2$ and $TiO_2$ anti-reflective layers were coated on sapphire substrate by MOCVD. The standard wavelength was 4,600nm, and the thickness of anti-reflective layers were 379 and 758nm in case of ${\lambda}/4$ and ${\lambda}/2$ of incident angle($65^{\circ}$), respectively. The $SiO_2$ and $TiO_2$ anti-reflective layers were coated 12.6 and 9.7nm/min of deposition rates by increasing oxygen pressure to set the ideal refractive index of 1.283. In case of $SiO_2({\lambda}/2)$ coating, the transmittance increased from 55.0 to 62.7%. The transmittance of $TiO_2({\lambda}/2)$ anti-reflective layer also increased from 55.0 to 64.8%. The flexural strength of $SiO_2({\lambda}/2)$ and $TiO_2({\lambda}/2)$ layer coated sapphire increased from 337.8 to 362.9 and 371.8MPa, respectively. The flexural strength at $500^{\circ}C$ of these materials also increased respectively to 304.5, 358.2MPa from 265.9MPa. From these results, we confirmed these materials can be used as transmission window of infrared light.

Role of CH2F2 and N-2 Flow Rates on the Etch Characteristics of Dielectric Hard-mask Layer to Extreme Ultra-violet Resist Pattern in CH2F2/N2/Ar Capacitively Coupled Plasmas

  • Kwon, B.S.;Lee, J.H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.210-210
    • /
    • 2011
  • The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

  • PDF

Microstructure Characterization for Nano-thick Ir-inserted Nickel Silicides (나노급 Ir 삽입 니켈실리사이드의 미세구조 분석)

  • Song, Oh-Sung;Yoon, Ki-Jeong;Lee, Tae-Hyun;Kim, Moon-Je
    • Korean Journal of Materials Research
    • /
    • v.17 no.4
    • /
    • pp.207-214
    • /
    • 2007
  • We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

A study on the new hybrid recurrent TDNN-HMM architecture for speech recognition (음성인식을 위한 새로운 혼성 recurrent TDNN-HMM 구조에 관한 연구)

  • Jang, Chun-Seo
    • The KIPS Transactions:PartB
    • /
    • v.8B no.6
    • /
    • pp.699-704
    • /
    • 2001
  • ABSTRACT In this paper, a new hybrid modular recurrent TDNN (time-delay neural network)-HMM (hidden Markov model) architecture for speech recognition has been studied. In TDNN, the recognition rate could be increased if the signal window is extended. To obtain this effect in the neural network, a high-level memory generated through a feedback within the first hidden layer of the neural network unit has been used. To increase the ability to deal with the temporal structure of phonemic features, the input layer of the network has been divided into multiple states in time sequence and has feature detector for each states. To expand the network from small recognition task to the full speech recognition system, modular construction method has been also used. Furthermore, the neural network and HMM are integrated by feeding output vectors from the neural network to HMM, and a new parameter smoothing method which can be applied to this hybrid system has been suggested.

  • PDF