• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.159-166
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• 1999

The physical properties and microstructural changes with heat-treatment of opacified silica aerogels doped by TiO2 were investigated. Monolithic SiO2-TiO2 aerogels were prepared by supercritical drying (25$0^{\circ}C$, 1250 psig) of wet gel obtained by adding titanium isopropoxide to prehydrolyzed TEOS-isopropanol solutions. The density and the porosity of SiO2-10 mol% TiO2 aerogels were 0.23 g/㎤ and 90%, respectively. During supercritical drying, the linear shrinkage of aerogels increased with increase in the titanium content an TiO2 was transformed to the anatase phase as well as particls agglomerates led to TiO2 clusters of 100~800 nm dispersed homogeneoulsy in the silica matrix. The IR transmittance of opacified silica aerogels was very low in the region of wavelengths below 8 ${\mu}{\textrm}{m}$ compared with pure silica aerogels and SiO2-TiO2 aerogels showed the high thermal stability of microstructures up to $600^{\circ}C$.

• Computers and Concrete
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• v.19 no.2
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• pp.153-159
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• 2017

In this study, the strength properties of alkali-activated silica fume (SF) mortars were investigated. The crushed limestone sand with maximum size of 0-5 mm and the sodium meta silicate ($Na_2SiO_3$) used to activate the binders were kept constant in the mortar mixtures. The mortar specimens using the replacement ratios of 0, 25, 50, 75 and 100% SF by weight of cement together with $Na_2SiO_3$ at a constant rate were produced in addition to the control mortar produced by only cement. Moreover, the mortar specimens using the replacement ratio of 4% titanium dioxide ($TiO_2$) by weight of cement in the same mixture proportions were produced. The prismatic specimens produced from eleven different mixtures were de-moulded after a day, and the wet or dry cure was applied on the produced specimens at laboratory condition until the specimens were used for flexural strength ($f_{fs}$) and compressive strength ($f_c$) measurement at the ages of 7, 28 and 56 days. The $f_{fs}$ and $f_c$ values of mortars applied the wet or dry cure were compared with the results of control mortar. The findings revealed that the $f_c$ results of the alkali activated 50% SF mortars were higher than that of mortar produced with Portland cement only. It was found that the $f_{fs}$ and $f_c$ of alkali-activated SF mortars cured in dry condition was averagely 4% lower than that of alkali-activated SF mortars cured in wet condition.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.12
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• pp.2263-2273
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• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of Hydrogen and New Energy
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• v.26 no.4
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• pp.339-346
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• 2015

The synthesis of Fischer-Tropsch (FT) oil is the catalytic hydrogenation of CO to give a range of products, which can be used for the production of high-quality diesel fuel, gasoline and linear chemicals. This studied catalyst was prepared Cobalt-supported alumina and silica by the incipient wet impregnation of the nitrates of cobalt, promoter and organic solvent with supports. Cobalt catalysts were calcined at $350^{\circ}C$ before being loaded into the FT reactors. After the reduction of catalyst has been carried out under $450^{\circ}C$ for 24h, FT reaction of the catalyst has been carried out at GHSV of 4,000/hr under $200^{\circ}C$ and 20atm. From these experimental results, we have obtained the results as following; In case of $SiO_2$ catalysts, the activity of 12wt% $Cobalt-SiO_2$ synthesized by organic solvent was about 2 or 3 times higher than the activity of 12wt% $Cobalt-SiO_2$ catalyst synthesized without organic solvent. In particular, the activity of the $Cobalt-SiO_2$ catalyst prepared in the presence of an organic solvent P was two to three times higher than that of the $Cobalt-SiO_2$ catalyst prepared without the organic solvent. Effect of Cr and Cu metal as a promoter was found little. 200 h long-term activity test was performed with a $Co/SiO_2$ catalyst prepared in the presence of an organic solvent of Glyoxal solution.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.747-754
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• 1990

Aluminum hydrate gels were prepared from the mixtures of bauxite and ammonium sulfate by wet acid process. Optimum conditions for obtaining the maximum yield( 99%) of aluminum hydrates from the same amount of bauxite were confirmed as follows ; 1. Mixing ratio ; addition of 25mole% of ammonium sulfate to 1mole of bauxite. 2. Calcination ; heated at 350℃ for 1hr. 3. Extraction ; leached at 95℃ in 1% H2SO4 for 90min. 4. pH of precipitating solution; slight below 7.0. Amorphous aluminum hydrates were precipitated at the pH lower than 8.5, but the precipitates crystallized to bayerite at the pH was 10. Mean diameter of α-Al2O3 powders which were obtained by calcining the aluminum hydrates was below 0.2㎛, and EDS analysis revealed than SiO2 was it's primary impurity.