• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1273-1275
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• 2005

The influence of oxygen plasma and octadecyltrichlorosilane (OTS) treatment of $SiO_2$ on the patterning of poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT:PSS) is presented. A significant difference in surface energies between plasma treated and OTS treated $SiO_2$ was noted. Such heterogeneous surface energy guides PEDOT:PSS to wet and spread on the wettable region and to dewet and retract from other regions.

• Proceedings of the IEEK Conference
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• summer
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.183-190
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• 2002

Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

• Journal of Applied Biological Chemistry
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• v.42 no.4
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• pp.175-179
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• 1999

Grape seed oil was extracted using different preparatory treatments as follows: (1) grinding, (2) grinding and roasting, (3) grinding and wet- roasting, (4) grinding, roasting, and wet-roasting, and (5) grinding, wet-roasting, and wet-roasting. The highest antioxidant activity was obtained from the sample with the method (2). Initial states of oxidation were similar except method (1) that showed more oxidized state, being P.O.V.8. Acid values were observed in the range from 1.42 to 1.89. The lowest acid value was found as 1.42 in method (1) and those of others were somewhat higher, indicating that heating process of roasting produced some free fatty acids. From the results of sensory evaluation, the best odor and taste were obtained from the methods (2) and (3). Repetitive procedure of wet-roasting, like method 5, caused some loss of flavor components and decrease in the sensory evaluation score. Addition of grape seed oil (method 2) to soybean and perilla oil at the level of 20% retained considerable antioxidant activities as much as 4.3 and 5 times, respectively, than 100% soybean or perilla oil stored for 12 weeks. When soybean or perilla oil was mixed with 20% grape seed oils, P.O.V. decreased to half of that of unmixed oils.

• Fashion & Textile Research Journal
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• v.7 no.3
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• pp.327-332
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• 2005

The purpose of this study is to investigate the effect of chitosan treatment on the dyeing of cotton fabric specimens using loess as colorants. The wet pick up ratio of the chitosan acid solution, as well as the drying condition after the padding of the fabric specimens, was changed in order to study the loess uptake on the fabric. The average particle diameter of the loess was measured. Main components of the loess were $SiO_2$, $Al_2O_3$, and $Fe_2O_3$. By the chitosan treatment, the loess amount on the cotton fabric increased. 80% wet pick up ratio of the chitosan acid solution on the cotton fabric specimen allowed more stable and even adhesion of the loess on the fabric surface, compared to the cases of 100% and 120% wet pick up ratio.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.202-208
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• 2005

The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified $SiO_2$ gate dielectrics. The effects of the surface treatment of $SiO_2$ on the electric characteristics of OTFTS were investigated. The surface of $SiO_2$ gate dielectric was treated by normal wet cleaning process, $O_2-plasma$ treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, $\mu$, was calculated to be $0.29\;cm^2V^{-1}s^{-1}$ for OTS treated sample while those for the HMDS, $O_2$ plasma treated, and wet-cleaned samples were 0.16, 0.1, and $0.04\;cm^2V^{-1}s^{-1}$, respectively.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.51-59
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• 1995

Stress-balanced flat 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ dielectric membrane on silicon substrate has been fabricated. Analyses of stress-deflection and stress-temperature, and visual inspection for the strain diagnostic test patterns were performed in order to characterize stress properties of the membrane. The $SiO_{2}$ layers sandwiched between two $Si_{3}N_{4}$ layers were deposited by three different techniques(PECVD, LPCVD, and APCVD) for the purpose of investigating the dependence of stress on the deposition methods. Some extent of tensile stress in the membrane was always observed regardless of the deposition methods, however it could be balanced against silicon substrate by post-wet oxidation in $1,150^{\circ}C$. Stress-temperature characteristics of the membranes showed that APCVD-LTO was better as mid-$SiO_{2}$ layer than PECVD - or LPCVD - $SiO_{2}$ when there was no oxidation process.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.1-8
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• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.312-319
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• 2017

For high value-added applications of natural blue diatomite, the physical refining process and synthesis of SiC from refined diatomite were investigated. Approximately 30 percent Fe ($Fe_2O_3$) in raw blue diatomite was removed by a particle sieve separation process; the Fe composition for 325 mesh down powder was approximately 2 percent. Although a wet and/or dry magnetic separation process had some influence on the separation and/or refining of Fe composition, the Fe composition in the non-magnetic by-product was approximately 2 percent. Water leaching separation was effective in removing the Fe composition; approximately 40 percent of the Fe in raw blue diatomite was removed. The synthesis of ${\beta}$-SiC by a carbothermal reduction of the $SiO_2$ in the refined diatomite using carbon (graphite, carbon black), the effects of an acid-treatment on removing the Fe, and the specific surface area for the synthesized powder were also investigated. The impurities were mostly eliminated and the specific surface area was increased to $52.5m^2/g$.