• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.928-934
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• 1996

Quantitative analysis each portland cement components was conducted by standard calibration method using X-ray fluorescence spectrometer. Standard sample and the unknown sample were prepared by fused cast bead method. In checking the errors of standard cement 227A372 the relative errors of constituents such as CaO, SiO2, Al2O3, Fe2O3, MgO and SrO were less than 1% and the relative errors of constituents such as So3, K2O, TiO2, Na2O P2O5, and Mn2O3 were less than 5% Sample preparation was mainly contributed to the errors. Compared with general wet chemical method the results of X-ray fluorescence analyses were more precise and accurate. Moreover it is possible to analyze precisely a little amount of the constituents such as SrO, Mn2O3 and P2O5 the analyses of which were very difficult using the wet chemical method.

• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.546-548
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• 2001

Neat chlorosulfonic acid reacts with silica gel to give silica sulfuric acid in which sulfuric acid is immobilized on the surface of silica gel via covalent bond. A combination of silica sulfuric acid and wet SiO$_2$ was used as an effective deacetalizating agent for the conversion of acetals to their corresponding carbonyl derivatives by using microwave irradiation under solvent free conditions.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.346-352
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• 2000

We investigated the oxidation behavior of poly $Si_{1-x}Ge_x$ films (X=0.15, 0.42) at $700^{\circ}C$ in wet oxidation ambients and analyzed the oxide by XPS, RBS, and cross-sectional TEM. In the case of poly $Si_{0.85}Ge_{0.15}$ films, $SiO_2$ was formed on the poly $Si_{1-x}Ge_x$ films and Ge was rejected from growing oxide, subsequently leading to the increase of Ge content. In the case of poly $Si_{0.58}Ge_{0.42}$ films, we found that $SiO_2-GeO_2$ were formed on the poly $Si_{1-x}Ge_x$ films due to high Ge content. Finally, we proposed the oxidation model of poly $Si_{1-x}Ge_x$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• Journal of Powder Materials
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• v.27 no.2
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• pp.119-125
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• 2020

One of the promising candidates for accident-tolerant fuel (ATF), a ceramic microcell fuel, which can be distinguished by an unusual cell-like microstructure (UO₂ grain cell surrounded by a doped oxide cell wall), is being developed. This study deals with the microstructural observation of the constituent phases and the wetting behaviors of the cell wall materials in three kinds of ceramic microcell UO₂ pellets: Si-Ti-O (STO), Si-Cr-O (SCO), and Al-Si-Ti-O (ASTO). The chemical and physical states of the cell wall materials are estimated by HSC Chemistry and confirmed by experiment to be mixtures of Si-O and Ti-O for the STO; Si-O and Cr-O for SCO; and Si-O, Ti-O, and Al-Si-O for the ASTO. From their morphology at triple junctions, UO₂ grains appear to be wet by the Si-O or Al-Si-O rather than other oxides, providing a benefit on the capture-ability of the ceramic microcell cell wall. The wetting behavior can be explained by the relationships between the interface energy and the contact angle.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.511-515
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• 2014

The thermodynamic instability of bubbles in wet-foam colloidal suspension is due to the substantial area of their gas/liquid interface. Several physical processes lead to gas diffusion from smaller to larger bubbles, resulting in a coarsening and Ostwald ripening of wet foam. This includes a narrowing of the bubble size distribution. The distribution and microstructure of porous ceramics, the adsorption free energy and Laplace pressure of $Al_2O_3$ particle-stabilized colloidal suspension, and $SiO_2$ content were investigated for tailoring the bubble size. Wet-foam stability of more than 80% is related to the degree of hydrophobicity with contact angles of $62-70^{\circ}$ achieved from the surfactant. The contact angle replaces part of the highly energetic interface and lowers the free energy of the system. This leads to an apparent increase in the surface tension (26-33 mN/m) of the colloidal suspension.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.315-318
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• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.