• Bulletin of the Korean Chemical Society
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• v.35 no.12
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• pp.3465-3474
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• 2014

Porous silica particles are the most prevailing raw material for stationary phases of liquid chromatography. During a long period of time, various methodologies for production of porous silica particles have been proposed, such as crashing and sieving of xerogel, traditional dry or wet process preparation of conventional spherical particles, preparation of hierarchical mesoporous particles by template-mediated pore formation, repeated formation of a thin layer of porous silica upon nonporous silica core (core-shell particles), and formation of specific silica monolith followed by grinding and calcination. Recent developments and applications of useful porous silica particles will be covered in this review. Discussion on sub-$3{\mu}m$ silica particles including nonporous silica particles, carbon or metal oxide clad silica particles, and molecularly imprinted silica particles, will also be included. Next, the individual preparation methods and their feasibilities will be collectively and critically compared and evaluated, being followed by conclusive remarks and future perspectives.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.2
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• pp.199-208
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• 2000

In this study we investigated on the possibility of platinum and silver catalysts as de-NOx catalyst for activity test of supported metal oxide catalysts. the study was performed with the change of amount of metal and support types. The catalyst was prepared the activity of alumina supported silver catalyst produced by dry and wet impregnation method respectively and the resistance of sulfur for optimum supported silver catalyst,. As a result the activity of alumina supported platinum catalyst was showed at low temperature region but the case of silver catalyst activated at high temperature region. So we finally chose alumina supported silver catalyst as de-NOx target catalyst because alumina supported catalyst showed higher activity than alumina supported platinum catalyst.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.541-547
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• 2016

In developing high temperature molds with advantages of the sand and precision (investment) castings, mechanical properties of the mold were improved through homogeneous coating of starting powders with an inorganic binder and improvement of fabrication process. Beads with mullite composition were employed for properties of the mold under high temperature, which was compared with artificial sands. Precursors of silica and sodium oxide were used as starting materials for an inorganic binder to achieve homogeneous coating on the starting powders. Strength was enhanced by the glass phase converted from the inorganic binder through heat treatment process. Also, two kinds of process, wet and dry processes, were incorporated to prepare mold specimens. Consequently, fabrication process of the mold with superior strength and high temperature applicability, compared with the previous molds for sand casting, could be suggested through control of the starting material and enhancement of the vitrification efficiency.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.273-278
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• 2021

Here, we studied the change in the mechanical stiffness of a diaphragm according to the corrugation pattern. The diaphragm consists of a silicon oxide and nitride double layer; a corrugation pattern was formed by dry etching, and the diaphragm was released by wet etching. The fabrication of the thin film was verified using focused ion beam and scanning electron microscopy images. The mechanical stiffness of the diaphragm was obtained by measuring the surface vibration using a laser Doppler vibrometer while applying external sound pressure. Flat squares, diaphragms with square corrugations, and circular corrugation patterns were measured and compared. The stiffness of the diaphragm with a corrugation structure was found to be smaller than that without a corrugation structure; in particular, circular corrugation showed a better effect because of the high symmetry. Furthermore, the effect of corrugation was theoretically predicted. The proposed corrugated diaphragm showed comparable flexibility with the state-of-the-art MEMS microphone diaphragm.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1175-1180
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• 2022

STI has been studied a lot as a process technology for wide area planarization according to miniaturization and high integration of semiconductor devices. In this study, as methods for improving the STI profile, wet etching of pad oxide using hydrofluorine solution and dry etching of O₂+CF₄ after STI dry etching were proposed. This process technology showed improvement in profile imbalance and leakage current between patterns according to device density compared to the conventional method. In addition, as a result of measuring the HLD thickness after CMP for a device having the same STI depth and HLD deposition, the measured value was different depending on the device density. It was confirmed that this was due to the difference in the thickness of the nitride film according to the device density after CMP and the selectivity of the slurry.

• Journal of Periodontal and Implant Science
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• v.32 no.3
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• pp.615-630
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• 2002

Various long-term studies have shown that titanium implants as abutments for different types of prostheses have become a predictable adjunct in the treatment of partially or fully edentulous patients. The continuous exposure of dental implants to the oral cavity with all its possible contaminants creates a problem. A lack of attachment, together with or caused by bacterial insult, may lead to peri-implantitis and eventual implant failure. Removal of plaque and calculus deposits from dental titanium implants with procedures and instruments originally made for cleaning natural teeth or roots may cause major alterations of the delicate titanium oxide layer. Therefore, the ultimate goal of a cleaning procedure should be to remove the contaminants and restore the elemental composition of the surface oxide without changing the surface topography and harming the surrounding tissues. Among many chemical and mechanical procedure, air-powder abrasive have been known to be most effective for cleaning and detoxification of implant surface. Most of published studies show that the dental laser may be useful in the treatment of pen-implantitis. $CO_2$ laser and Soft Diode laser were reported to kill bacteria of implant surface. The purpose of this study was to obtain clinical guide by application these laser to implant surface by means of Non-contact Surface profilometer and X-ray photoelectron spectroscopy(XPS) with respect to surface roughness and atomic composition. Experimental rough pure titanium cylinder models were fabricated. All of them was air-powder abraded for 1 minute and they were named control group. And then, the $CO_2$ laser treatment under dry, hydrogen peroxide and wet condition or the Soft Diode laser treatment under Toluidine blue O solution condition was performed on the each of the control models. The results were as follows: 1. Mean Surface roughness(Ra) of all experimental group was decreased than that of control group. But it wasn't statistically significant. 2. XPS analysis showed that in the all experimental group, titanium level were decreased, when compared with control group. 3. XPS analysis showed that the level of oxygen in the experimental group 1, 3($CO_2$ laser treatment under dry and wet condition) and 4(Soft Diode laser was used under toluidine blue O solution) were decreased, when compared with control group. 4. XPS analysis showed that the atomic composition of experimental group 2($CO_2$ laser treatment under hydrogen peroxide) was to be closest to that of control group than the other experimental group. From the result of this study, this may be concluded. Following air-powder abrasive treatment, the $CO_2$ laser in safe d-pulse mode and the Soft Diode laser used with photosensitizer would not change rough titanium surface roughness. Especially, $CO_2$ laser treatment under hydrogen peroxide gave the best results from elemental points of view, and can be used safely to treat peri-implantitis.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.893-899
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• 2018

In the present study, we investigated the sulfur poisoning of the Ni anode in solid oxide fuel cells (SOFCs) as a function of operating conditions. Anode supported cells were fabricated, and sulfur poising tests were conducted as a function of current density, $H_2S$ concentration and humidity in the anode gas. The voltage drop was significant under the higher current density (${\sim}714mA/cm^2$) condition, while it was much reduced under the lower current density (${\sim}389mA/cm^2$) condition, at 100 ppm of $H_2S$. A secondary voltage drop, which occurred only at the high current density, was attributed to Ni oxidation in the anode. Thus, operation at high current density with high $H_2S$ concentration may lead to permanent deterioration in the anode. The effect of water content (10%) on the sulfur poisoning was also investigated through a constant current test (${\sim}500mA/cm^2$) at 10 ppm of $H_2S$. The cell operating with 10% wet anode gas showed a much smaller initial voltage drop, in comparison with a dry anode gas. The present study indicates that operating conditions, such as gas humidity and current density, should be carefully taken into account, especially when fuel cells are operated with $H_2S$ containing fuel.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.