• Journal of Korean Institute of Industrial Engineers
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• v.21 no.4
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• pp.507-517
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• 1995

The failure rate of an item depends on operational environment. When an item has a chance failure period and a wearout failure period in sequel, the severity of operational environment causes the increase in the slop of wearout failure rate or the increase in the magnitude of chance failure rate. For such a change of operational environment, this paper concerns the change of optimal preventive replacement time. Two preventive replacement policies, age replacement policy and periodic replacement policy with minimal repair, are considered. Investigated properties are: (a) in age replacement policy, optimal preventive replacement time increases as the chance failure rate increases and optimal preventive replacement time decreases as the slope of wearout failure rate increases, and (b) in periodic replacement policy with minimal repair, optimal preventive replacement time increases as the slope of wearout failure rate increases; however, the change of chance failure rate does not alter the optimal preventive replacement time.

• Journal of the military operations research society of Korea
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• v.17 no.1
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• pp.1-24
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• 1991

This report concerns the study of deciding replacement requirements for 1/4ton truck in Korea. Two causes of replacement, accidental loss and wearout are considered in the replacement requirements model which was developed in Defence Logistics Agency. The model represents the state of 1/4 ton truck inventory over time as a finite Markov chain process. An accidental loss rate, yearly usage rates. wearout rates are used in conjuction with the current mileage distribution of the inventory to forecast replacement requirements in future time periods.

• Electrical & Electronic Materials
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• v.1 no.1
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• pp.78-85
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• 1988

본 논문에서는 SiH$_{4}$-N$^{2}$ 혼합가스에 의한 PECVD 방법으로 퇴적시킨 실리콘 질화막의 신뢰성을 평가하기 위해 절연파괴 분포와 TDDB(Time Dependent Dielectric Breakdown)특성을 고찰하였다. MNS 캐패시터의 절연파괴 분포는 7-8NV/cm의 전계세기에서 그 파괴전계가 집중되었으며 전계와 온도 stress에 의해 파괴시간이 지수함수적으로 감소함을 알 수 있었다. 아울러 이러한 TDDB 특성과 계면준위 밀도 및 SiN 막내의 공간전하형성과의 관련성을 고찰하였다.

• Transactions of The Korea Fluid Power Systems Society
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• v.2 no.4
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• pp.14-22
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• 2005

The safety factor of hydraulic piston pumps & motors due to high pressurization, high speedization and low weight/volume realization to enhance the output density shows a tendency to decrease. Therefore more effective test methods are necessary to predict the exact life. The failure of hydraulic pumps & motors operating in high pressure and high speed mainly occurs in piston-shoe assemblies, and the major failure mode is wearout of the shoe surface. The sensitive parameters in the endurance life test are speed, pressure and temperature, and the failure production increases in proportion to the operating time. In this research, the authors propose the combined accelerated life test model using the analysis method of the combined accelerated life test results of piston-shoe assemblies by applying simultaneously high speed, high pressure and high temperature in accordance with variation of speed, pressure and temperature to reduce the life test time.

• Proceedings of the Korean Reliability Society Conference
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• 2006.05a
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• pp.116-125
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• 2006

Piston assemblies, which are key components of hydraulic high pressure pumps & motors, are major failure products operating at high pressure and high speed, and the main failure mode is wearout of the shoe surface. To predict the actual life of piston assemblies. we require to find out the most sensitive parameters and establish related empirical formula. In this study, we analyzed the life of piston and shoe assemblies in accordance with variation of speed, pressure, and temperature to reduce the life test time, then analyzed the result of combined accelerated life test which is applied by high speed, speed pressure, and high temperature simultaneously, and finally developed combined accelerated life test model.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.177-179
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• 1990

Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.

• Journal of Biosystems Engineering
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• v.8 no.1
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• pp.30-37
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• 1983

Frequent breakdowns of power tiller, particularly in the peak labor constraints, have been a cause of decreasing machine productivity and its efficient utilization. To keep power tiller always ready to work, it may be necessary to identify the failure characteristics of some major parts of power tiller, and to have those parts replaced accordingly before they show the symptom of mulfunction. This study was conducted to identify the failure characteristics of some major parts of power tiller and to estimate their lives (MTBF) using a Weibull distribution function. The result showed that about half of breakdowns currently being occurred may be reduced through timely replacement of those part having wearout failure characteristics.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.5 s.236
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• pp.689-697
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• 2005

This paper presents the reliability estimation of door hinge for home appliances, which consists of bushing and shaft. The predominant failure mechanism of bushing made of polyoxymethylene(POM) is brittle fracture due to decrease of strength caused by voids existing, and that of shaft made of acrylonitrile-butadiene-styrene(ABS) is creep due to plastic deformation caused by excessive temperature and lowering of glass transition temperature by absorbed moisture. Since the brittle fracture of bushing is overstress failure mechanism, the load-strength interference model is used to estimate the failure rate of it along with failure analysis. By the way, the creep of shaft is wearout failure mechanism, and an accelerated life test is then planned and implemented to estimate its lifetime. Through the technical review about failure mechanism, temperature and humidity are selected as accelerating variables. Assuming Weibull lifetime distribution and Eyring model, the life-stress relationship and acceleration factor, $B_{10}$ life and its lower bound with $90\%$ confidence at worst case use condition are estimated by analyzing the accelerated life test data.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.147-150
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• 1988

Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin $SiO_2$ film is required to fabricate a small-geometry MOS device. In the present study we have attempted to eliminate the failure-causing defects that develop in thin oxide films during the oxidation step by performing a long-time preoxidation and postoxidation annealing. The TDDB test and the copper decoration method were used to calculate the oxide defects density of MOS device. The dielectric reliability of high-quality thin oxides have been studied by using the time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric -breakdown (Constant-stressed I-V) tests. Failure times against temperature and electric field are examined and acceleration factors are abtained for each parameter. Based on the data obtained, breakdown wearout limitation for thin oxide films is estimated.