Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Statistical Analysis of wear out in electrically stressed Laser Assisted PECVD SiN Films

Laser Assisted PECVD SiN막의 경시적 열화에 관한 시간 의존성의 통계적 고찰

  • Kim, Chun-Sub (Depart. of Electrical Engineering, Korea University) ;
  • Kim, Yong-Woo (Depart. of Electrical Engineering, Korea University) ;
  • Yi, Seung-Hwan (Depart. of Electrical Engineering, Korea University) ;
  • Sung, Yung-Kwon (Depart. of Electrical Engineering, Korea University)
  • Published : 1990.07.05
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Abstract

Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.

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