• Title/Summary/Keyword: Voltage variation

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LCD/PDP TV 전원장치용 고전압 구동 IC (High Voltage Driver IC for LCD/PDP TV Power Supply)

  • 송기남;이용안;김형우;김기현;서길수;한석붕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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고유전율 게이트 산화막을 가진 적층형 3차원 인버터의 일함수 변화 영향에 의한 문턱전압 변화 조사 (Investigation of threshold voltage change due to the influence of work-function variation of monolithic 3D Inverter with High-K Gate Oxide)

  • 이근재;유윤섭
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2022년도 추계학술대회
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    • pp.118-120
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    • 2022
  • 본 논문은 M3D(Monolithic 3-Dimension) Inverter의 소자 구조에서 메탈 게이트의 WFV(Work-function Variation)의 영향에 따른 임계전압의 변화에 대하여 조사했다. 또한 PMOS 위에 NMOS가 적층된 인버터의 전기적 상호작용에 따른 임계전압의 변화를 조사하기 위해 PMOS에 0과 1 V의 전압을 인가하여 전기적 상호작용을 조사하였다. 사용된 메탈 게이트의 평균 일함수에 대한 임계전압의 변화량은 0.1684 V로 측정되었고, 표준편차는 0.00079 V가 조사 되었다.

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A Study on the Control Method of Customer Voltage Variation in Distribution System with PV Systems

  • Kim, Byung-ki;Choi, Sung-sik;Wang, Yong-peel;Kim, Eung-sang;Rho, Dae-seok
    • Journal of Electrical Engineering and Technology
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    • 제10권3호
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    • pp.838-846
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    • 2015
  • This paper deals with the modified modeling of PV system based on the PSCAD/EMTDC and optimal control method of customer voltages in real distribution system interconnected with the photovoltaic (PV) systems. In order to analyze voltage variation characteristics, the specific modeling of PV system which contains the theory of d-q transformation, current-control algorithm and sinusoidal PWM method is being required. However, the conventional modeling of PV system can only perform the modeling of small-scale active power of less than 60 [kW]. Therefore, this paper presents a modified modeling that can perform the large-scale active power of more than 1 [MW]. And also, this paper proposes the optimal operation method of step voltage regulator (SVR) in order to solve the voltage variation problem when the PV systems are interconnected with the distribution feeders. From the simulation results, it is confirmed that this paper is effective tool for voltage analysis in distribution system with PV systems.

Electron-excitation Temperature with the Relative Optical-spectrumIntensity in an Atmospheric-pressure Ar-plasma Jet

  • Han, Gookhee;Cho, Guangsup
    • Applied Science and Convergence Technology
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    • 제26권6호
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    • pp.201-207
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    • 2017
  • An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

Four-Switch 인버터의 전압 변동 보상 기법을 통한 전동기 운전 기법 (Motor Control Method for Four-Switch Inverters with DC-link Voltage Ripple Compensation Algorithm)

  • 이동명
    • 조명전기설비학회논문지
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    • 제27권7호
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    • pp.59-66
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    • 2013
  • This paper proposes a new voltage reference generation method for Four-Switch Inverters(FSI) with compensation of the neutral DC-link voltage variation. Since FSIs have the split DC-link causing the inherent problem of voltage fluctuations in the upper and lower capacitors, it is required to take account the voltage difference between the top and bottom capacitors. In this paper, to reduce the effect by the voltage variation, reference voltages are modified by adding compensation voltages proportional to the voltage difference between upper and lower capacitors. Simulation results showing control performance of induction and permanent magnet motors demonstrate the validity of the proposed method.

Effects of Offset Gate on Programing Characteristics of Triple Polysilicon Flash EEPROM Cell

  • Kim, Nam-Soo;Choe, Yeon-Wook;Kim, Yeong-Seuk
    • Journal of Electrical Engineering and information Science
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    • 제2권3호
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    • pp.132-138
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    • 1997
  • Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

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저전압에서 다결정 실리콘 TFT의 불균일한 특성을 보상한 새로운 AMOLED 구동회로 (A Novel Poly-Si TFT Pixel circuit for AMOLED to Compensate Threshold Voltage Variation of TFT at Low Voltage)

  • 김나영;이문석
    • 대한전자공학회논문지SD
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    • 제46권8호
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    • pp.1-5
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    • 2009
  • 본 논문에서는 저전압에서 다결정 실리콘(Polycrysta1line Silicon: Poly-Si) 박막 트랜지스터 (Thin Film Transistors: TFTs) 의 문턱전압(threshold voltage)의 불균일성을 보상한 새로운 AMOLEDs(Active Matrix Organic Light Diodes) 구동 회로를 제안한다, 제안한 회로는 6개의 스위칭, 1개의 드라이빙 TFT와 1개의 저장 콘덴서로 구성되어 있으며, SPICE 시뮬레이션을 통해 구동회로의 동작을 검증하였다. 시뮬레이션 결과 5V정도의 낮은 구동 전압($V_{DD}$)에서 제안한 화소 구동회로의 OLED 출력 전류는 0.8%정도의 오차를 갖는 반면 기본적인 구동회로의 경우 약20%정도의 오차를 갖는 것을 확인할 수 있었다. 본 논문에서 제안한 화소 구동회로는 OLED의 전류를 결정하는 driving TFT의 threshold voltage 변화에 따른 전류의 변화를 성공적으로 보상하였고, 안정화된 전류를 OLED를 흘려주어 기본적인 화소 회로가 가지고 있던 불균일화의 문제를 해결함을 알 수 있다.

p-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 5-TFT OLED 화소회로 (5-TFT OLED Pixel Circuit Compensating Threshold Voltage Variation of p-channel Poly-Si TFTs)

  • 정훈주
    • 한국전자통신학회논문지
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    • 제9권3호
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    • pp.279-284
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    • 2014
  • 본 논문에서는 p-채널 저온 다결정 실리콘 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 새로운 OLED 화소회로를 제안하였다. 제안한 5-TFT OLED 화소회로는 4개의 스위칭 박막 트랜지스터, 1개의 OLED 구동 박막 트랜지스터 및 1개의 정전용량으로 구성되어 있다. 제안한 화소회로의 한 프레임은 초기화 구간, 문턱전압 감지 및 데이터 기입 구간, 데이터 유지 구간 및 발광 구간으로 나누어진다. SmartSpice 시뮬레이션 결과, 구동 트랜지스터의 문턱전압이 ${\pm}0.25V$ 변동 시 최대 OLED 전류의 오차율은 -4.06%이였고 구동 트랜지스터의 문턱전압이 ${\pm}0.50V$ 변동 시 최대 OLED 전류의 오차율은 9.74%였다. 따라서 제안한 5T1C 화소회로는 p-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동에 둔감하여 균일한 OLED 전류를 공급함을 확인하였다.

n-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동 보상을 위한 전압 기입 AMOLED 화소회로 (A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs)

  • 정훈주
    • 한국전자통신학회논문지
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    • 제8권2호
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    • pp.207-212
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    • 2013
  • 본 논문에서는 n-채널 저온 다결정 실리콘 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 전압 기입 AMOLED 화소회로를 제안하였다. 제안한 6T1C 화소회로는 5개의 스위칭 박막 트랜지스터, 1개의 OLED 구동 박막 트랜지스터 및 1개의 정전용량으로 구성되어 있다. SmartSpice 시뮬레이션 결과, 구동 트랜지스터의 문턱전압이 ${\pm}0.33$ V 변동시 최대 OLED 전류의 오차율은 7.05 %이고 Vdata = 5.75 V에서 OLED 양극 전압 오차율은 0.07 %로 제안한 6T1C 화소회로가 구동 트랜지스터의 문턱전압 변동에도 균일한 OLED 전류를 공급함을 확인하였다.

Time Varying 전원 전압을 고려한 PWM 컨버터 제어 (PWM Converter Control considering time varying source voltage)

  • 주인원;임선경;남광희
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1999년도 전력전자학술대회 논문집
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    • pp.692-695
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    • 1999
  • A new control scheme is proposed suitable for the three phase PWM converter having abrupt load variation such as a crane. In the converter used in a crane, the peak value of source voltage varies instantaneously due to the abrupt load variations. Such a voltage variation degrades the performance of DC-link control of PWM converter. To overcome this problem, load variations should be detected and compensated properly. We propose a new method for detecting and compensating the load variations without the additional hardware. With the proposed scheme, load variations are detected by estimating the current of DC-link capacitor. The estimated current information is feedbacked to a current controller to improve the performance. Additionally, the variation of source voltage is compensated using feedforward controller. The performance of the proposed scheme has been verified through simulations.

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