• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.12
• /
• pp.806-811
• /
• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Journal of Sensor Science and Technology
• /
• v.16 no.6
• /
• pp.457-461
• /
• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2000.10a
• /
• pp.494-498
• /
• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• Archives of Plastic Surgery
• /
• v.34 no.1
• /
• pp.52-59
• /
• 2007

Purpose: The venous flap is used as an alternative method to the standard free flap for the management of small and thin soft tissue defects. Especially, the venous flap has advantages of being thin, easy harvest and various donor sites, as well as it having lower morbidity. Yet their clinical applications have been limited by their unstable postoperative course and also by their complications such as partial necrosis. The aim of this study is to extend the clinical indications of venous flaps with using various methods. Methods: From May 2005 to March 2006, total of 19 patients(21 cases) underwent various venous flaps for soft tissue defects as a result of trauma(15 cases), facial skin cancer(3 cases), chronic ulcer(1 case) and surgical wound for congenital anomaly(2 cases). The arterialized venous free flap were applied in 18 cases, the pure venous free flap was applied in 1 case and the pure venous pedicled flap were applied in 2 cases. Among them, two flow-through arterialized venous free flaps were applied that used the great saphenous vein to reconstructed major arteries as well as the injured skin and soft tissues in the arm. All the flap were harvested from the volar wrist(11 cases), dorsum of foot(5 cases), thenar(2 cases), and medial thigh(3 cases). Results: The sizes of the flap ranged from $0.75cm^2$ to $264cm^2$(mean size: $40.06cm^2$). The follow-up period ranged from two to twelve months. In the majority of cases, we obtained satisfying results, which was the excellent reconstruction of skin and soft tissue defects and especially in the case of limb salvage, replantation and cancer reconstruction. However, there were 5 cases of partial necrosis and 2 cases of complete failure. The donor sites were closed primarily in 7 cases and wound closure with skin graft were in 14 cases. Conclusion: We conclude that the venous flap will not only be useful for reconstruction of small defect in the hand and foot, but also be useful for various other clinical indications.

• Journal of the Korean Society for Heat Treatment
• /
• v.30 no.4
• /
• pp.151-155
• /
• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

• Proceedings of the Membrane Society of Korea Conference
• /
• 1999.07a
• /
• pp.115-115
• /
• 1999

In this work a new process was developed for the sulfonation of the chemicallly stable engineering polymer polyethersulfone as membrane materials for electrodialysis or a flow battery applications. Commercially available polyethersulfone polymer was partially sulfonated using a CSA sulfonating agent in a dichloromethane solvent, which sulfonated polyethersulfone with various sulfonation levels have been prepared. Sulfonated polyethersulfone (SPES) membranes with different ion capacities were prepared for the purpose of identifying cation exchange membrane properties, in an attempt to find a low cost replacement for Nafion, which most of the perfluorinated membranes, known to exhibit a prolonged service life, are expensive and difficult to process. The following features were determined: the degree of sulfonation, water uptake, thermal analysis, and electrochemical properties such as ion exchange capacities, resistivity, selectivity of ion permeation. The surface of the cation exchange membranes, decomposed with the H202-treatment, were observed by using scanning electron microscope. The area resistivities of SPES mebranes in 5N-NaOH decreased from $2,150{\;}{\Omega}-cm2$ to less than $15{\Omega}-cm2$ as the ion exchange capacity (IEC) increased from 0.62 to 1.73 millieequivlants per dry gram(meq/dg).eq/dg).

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.76-85
• /
• 2017

We investigate the indirect-fed magnetic resonant wireless power transfer (MR-WPT) system for wireless charging for mobile devices by rearranging the loops and coils. Conventional MR-WPT is difficult to apply to consumer electronic products because of the arrangement of the resonators. In addition, there are restrictions for charging using a wireless technology, which depend on the circumstances of the usage scenarios. For practical applications, we analyzed the transfer efficiency of the MR-WPT system with various combinations and positions of resonators. Three rearranged configurations (Out-Out, Out-In, In-In) have been considered and experimentally investigated using hollow pipe loops and wire copper coils. There were four types of loops and two types of coils; each one had a different diameter and thickness. The results of the measurements show that the trends of the transfer efficiencies for the three configurations were similar. A transfer efficiency of 82.5% was achieved at a 35-cm distance between the 60-cm diameter transmitter (Tx) and receiver (Rx) coils.

• Journal of the Korean Society for Heat Treatment
• /
• v.30 no.1
• /
• pp.1-5
• /
• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.202-205
• /
• 2002

Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$. The high temperature annealed poly-Si film illustrated field effect mobility higher than 30 $\textrm{cm}^2$/Vs, achieved I$\sub$on//I$\sub$off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.414-417
• /
• 2001

Recently, developments of device using characteristics of ceramics as a new technical material is in progress. While doing so, Ultrasonic motor which is a part of research & development of piezo-actuator by piezo-effects is being used in the various applications. So, we fabricated a flat-type $L_{1}-B_{8}$ mode Ultrasonic motor and measured the operation characteristics of its. The size of USM is 80*20*1.5[$mm^{3}$](length*width*thickness) and is constructed with stator by piezo-ceramics and stainless elastic body and rotator by bearings. As results of experiments, the fastest speed of revolution(v), the maximum torque(T) and the efficiency( $\eta$ ) were 37.5[cm/sec], 5.0[ $mN{\cdot}m$ ] and 1.17[%] respectively when 27.9[kHz], 150[gf], 50[V] were applied. So, we think this $flat-type_{1}-B_{8}$ mode Ultrasonic motor is able to be used for applications in forwarding device of a paper or electric card and so on.