• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.878-883
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• 2002

Electrical resistivity and thermoelectric power measurements on Mn-based $La_{2.1}Sr_{1.9}Mn_3O_{10}$ with layered perovskite structure as functions of temperature are presented. The experimental results demonstrate that the electronic transport in $La_{2.1}Sr_{1.9}Mn_3O_{10}$ is well described by the Emin-Holstein adiabatic small polaron model. The thermoelectric power data in the small polaron regime above Curie temperature is nearly equal to that predicted by nominal $Mn^{4+}$ valence arguments. This indicates that transport involves small polaron hopping.

• Journal of Convergence for Information Technology
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• v.10 no.12
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• pp.91-99
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• 2020

The aim of this study to assess the effect of information security policy awareness, information security involvement, compliance behavioral intention on information security behavior The research method is composed of a cross-sectional design of reward and fairness. This paper focuses on the process of organizational policy on the information security compliance intention in the individual decision-making process. As a result, the reward had a significant effect on compliance behavioral intention, and it was found that influence of the psychological reward-based condition was greater than the material reward-based condition. The fairness had a significant effect on information security policy awareness, information security involvement, information security behavior, and it was found that influence of the equity-based condition was greater than the equality-based condition. The exploration model was verified as a multiple mediation model. In addition, the discussion presented the necessary research direction from the perspective of synergy by the cultural environment of individuals and organizations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Nuclear Engineering and Technology
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• v.28 no.2
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• pp.118-128
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• 1996

The lattice parameters of stoichiometric $UO_2$ and $U_{1-y}Er_{y}O_2$ in the range of y=0.01 to y =0.33 were determined with use of X-ray diffraction data. Oxygen potentials have been measured by means of a thermogravimetric method in the range of 1200~$1500^{\circ}C$ and $10^{-14}$ $\leq$ $Po_2$ $\leq$ $10^{-3}$ for pure $UO_2$ and $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions with y=0.02, y=0.06 and y=0.20, respectively. Their oxygen partial pressures were maintained by controlling $CO_2$/CO mixture atmosphere, and the $Po_2$ values corresponding to x of $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions were measured with an electrolyte oxygen sensor. The lattice parameter decreases linearly with an increase in the erbium content. The change of the lattice parameter can be expressed in a linear equation of y as a($\AA$) =5.4695-0.220y for 0 $\leq$y$\leq$0.33. The experimental coefficient of y -0.220 in $U_{1-y}Er_{y}O_2$ was an intermediate value between the calculated values -0.273 and -0.156 in the case of $U^{5+}$ and $U^{6+}$, respectively. The (equation omitted) has been found to undergo abrupt increase in the range of -360 to -270 kJ/mole for y=0.06 and -320 to -220 H/mole for y=0.20, respectively, in the temperature range of 1200-$1500^{\circ}C$. (equation omitted) increases with erbium content, but the effect of the dopant for x =0.01 is less significant than that for stoichiometry. The oxygen potentials for $UO_2$ and $U_{0.98}Er_{0.02}O_{2+x}$ can be approximately represented by the $U^{5+}$/$U^{4+}$ model but those for y$\geq$ 0.06 in $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions cannot be interpreted by the mean uranium valence model.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.104-110
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• 1985

Empirical force-field method has been applied to D-sorbitol, the crystal structure of which has been studied by the single crystal X-ray and neutron diffraction analyses. The calculated C-C bond lengths agree with those observed within 0.009${\AA}$. The C-O bond lengths show a larger deviation of 0. 023${\AA}$. The calculated C-C-C and C-C-O valence angles agree with those observed within $2.3^{\circ}$ and $1.9^{\circ}$respectively. Because torsion angles are influenced by packing forces, they show considerably flarger r. m. s. deviations. Calculations of the conformational energies of the model compound at selected C(1)-C(2)-C(3)-C(4) torsion angles made with the program MMI, produced result that the prediction of the observed preferred conformation of the carbon chain appeares to be less satisfactory.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.207-210
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• 2012

The preparation of $Sm_2O_3$ doped $CeO_2$ in Igepal CO-520/cyclohexane reverse micelle solutions has been studied. In the present work, we synthesized nanosized $Sm_2O_3$ doped $CeO_2$ powders by reverse micelle process using aqueous ammonia as the precipitant; hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase, and poly (xoyethylene) nonylphenylether (Igepal CO-520) as the non-ionic surfactant. The synthesized and calcined powders were characterized by Thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), and Transmission electron microscopy (TEM). The crystallite size was found to increase with increase in water to surfactant (R) molar ratio. Average particle size and distribution of the synthesized $Sm_2O_3$ doped $CeO_2$ were below 10 nm and narrow, respectively. TG-DTA analysis shows that phase of $Sm_2O_3$ doped $CeO_2$ nanoparticles changed from monoclinic to tetragonal at approximately $560^{\circ}C$. The phase of the synthesized $Sm_2O_3$ doped $CeO_2$ with heating to $600^{\circ}C$ for 30 min was tetragonal $CeO_2$. This study revealed that the particle formation process in reverse micelles is based on a two step model. The rapid first step is the complete reduction of the metal to the zero valence state. The second step is growth, via reagent exchanges between micelles through the inter-micellar exchange.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• Science of Emotion and Sensibility
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• v.7 no.3
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• pp.51-56
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• 2004

Arousal level has been well defined by autonomic responses. However, entire emotion including both valence and arousal level is often questioned to be completely described by only autonomic responses. This study is to find the autonomic physiological parameters which were used emotion evaluation, 15 undergraduate students were asked to watch eight video clips from diverse movies and comedy shows for experiencing emotions. The subjectively experienced emotion were grouped by three factors. Two dimensional emotion model having the pleasant-unpleasant and arousal-non arousal factors were mapped with three physiological responses(GSR, PPG, SKT). The results may suggest that PPG and GSR may be used as arousal index while SKT may pleasant index. And the complex relation of physiological responses to emotional experiences are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.770-775
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• 2002

We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.