• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.916-921
• /
• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• Proceedings of the KIEE Conference
• /
• 1986.07a
• /
• pp.551-554
• /
• 1986

• Proceedings of the KIEE Conference
• /
• 1989.07a
• /
• pp.548-551
• /
• 1989

Two dimensional numerical analysis program of power VDMOSFET structure has been developed. Modeling and analysis on the electrical characteristics of the device are presented These are available for the device structure optimization and physical understanding of the behavior of the device

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.37 no.9
• /
• pp.609-618
• /
• 1988

Two dimensional numericl analysis program of power VDMOSFET structure has been developed. Modeling for equipotential distribution, current flow pattern and carrier distribution are presented. I-V characteristic curves due to saturation velocity, mobility value, transconductance and on-resistance are studied by comparison of computer simulated results and exeperimental data. These are found to agree with the simulated results and experimental data.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.35 no.7
• /
• pp.278-284
• /
• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.775-778
• /
• 1987

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bais shows both positive and negative resistance characteristics depending on the gate threhold voltage and gate-to source bias voltage. In this study, the decision method of the internal temperature measurement by $V_{GS}$ and $V_{DS}$ are presented.