• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.259-266
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• 1974

Isotopic experiments using $H_2O^{18}$ on the oxidation of V(III) in acid perchlorate by molecular oxygen were performed in the range pH 1.0 to 3.0. At pH < 2, where a rate equation of the form TEX>$ -\frac{d[V(III)]}{dt}=k_1\frac{[O_2][V(III)]}{[H^+]}$ is adequate, the tracer study clearly indicated that all the product vanadyl ion's ($VO^{2+}$) oxygen originated from the molecular oxygen. At pH > ~2, where a different rate expression of the form $-\frac{d[V(III)]}{dt}=K_2\frac{[O_2][V(III)]^2}{[Ht]^2}$is required, the isotopic experiment showed that half the vanadyl oxygen originated from the molecular oxygen. Considering the results of the isotopic study, a mechanism for the V(Ⅲ)-O2 reaction at pH < ~2, may be suggested as follows: The tracer results at pH > ~2 imply that the rate determining step may be $$ V_2(OH)_2^{4+} + O_2 \rightarrow 2VO^{2+} + H_2O_2$$ followed by $$V_2(OH)_2^{4+} + H_2O_2 \rightarrow 2VO^{2+} + 2H_2O$$ after establishing the equilibria V^{3+} + H_2O \leftrightarrow VOH^{2+} + H^+, and 2VOH^{2+}\leftrightarrow V_2(OH)_2^{4+}$$

• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.11-17
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• 1992

Vibration-to-vibration energy transfer probabilities for $HF(v=n)+H_2(v=0){\to}HF(v=n-1)+H_2(v=1)$ and $DF(v=n)+D_2(v=0){\to}DF(v=n-1)+D_2(v=1)$ including both the vibration-to-vibration and translation (V-V, T) and vibration-to-vibration and rotation (V-V, R) energy transfer paths have been calculated semiclassically using a simplified collision model and Morse-type intermolecular interaction potential. The calculated results are in reasonably good agreement with those obtained by experimental studies. They also show that the transition processes for $HF(v=1-3)+H_2(v=0){\to}HF(v=0-2)+H_2(v=1)$ and $DF(v=1,\;4)+D_2(v=0){\to}DF(v=0,\;3)+D_2(v=1)$ are strongly dependent on the V-V, T path at low temperature but occur predominantly via the V-V, R path with rising temperature. The vibration-to-vibration energy transfer for $HF(v=4)+H_2(v=0){\to}HF(v=3)+H_2(v=1)$ and $DF(v=2-3)+D_2(v=0){\to}DF(v=1-2)+D_2(v=1)$ occur predominantly via V-V, R path and V-V, T path through whole temperatures, respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Korean Chemical Society
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• v.8 no.4
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• pp.147-152
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• 1964

Vanadium (IV) and vanadium (V) cupferrate compositions in benzene phase were determined by molar ratio method and continuous variation method spectrophotometrically at 450$m{\mu}$ or 445$m{\mu}$ of wavelength. Compositions of vanadium (IV) cupferrates, V(IV)/Cupf, varied from 1/2 to 1/4 with the acidity of solution from which the complexes were precipitated. The complexes precipitated were vanadium(IV) cupferrate($VCupf_4$) in solution with lower pH than 1.0, and vanadyl(IV) cupferrate ($VOCupf_2$) in solution with 1.8-4.3 of pH. It was considered, however, that the complexes in solution with 1.3-1.7 of pH might be hydrogen vanadyl(IV) cupferrate ($HVOCupf_3$) or nearly equimolar mixture of $VCupf_4\;and\;VOCupf_2$ complexes. Vanadium (V) cupferrate composition did not vary with the acidity of solution from which the complexes were precipitated. In solution with lower pH than 1.8, the complex precipitated was hydrogen vanadyl (V) cupferrate, $HVO_2Cupf_2$.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.532-537
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• 1986

The kinetics of the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with $VO_2^+$ have been studied at $25^{\circ}C$ by spectrophotometric method. Stoichiometry of the oxidation of$ [Mo_2O_4(H_2O)_6]^{2+}$ is followed as $Mo_2^V + 2V^V {\rightleftharpoons} 2Mo^{VI} + 2V^{IV}$. Observed rate constants are dependent on $ [H^+]\;and\;[VO_2^+]$. Mechanism for the redox of $[Mo_2O_4(H_2O)_6]^{2+}\;and\;VO_2^+$ is proposed and discussed.

• Korean Journal of Crystallography
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• v.15 no.1
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• pp.35-39
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• 2004

Two new nickel vanadium borophosphate cluster compounds, $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (1) and $(NH_4)_{3.5}(C_3H_{12}N_2)_{3.5}[Ni(H_2O)_6]_{1.25}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (2) have been synthesized and structurally characterized. Inter-diffusion methods were employed to prepare the compounds. The cluster anion $[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6$ is used as a building unit in the synthesis of new compounds containing $Ni(H_2O){^{2+}_5}$ in the presence of pyrazine and 1,3-diaminopropane. Compounds contain isolated cluster anions with general composition ${[Ni(H_2O)_5]_n[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6}^{-(17-2n)}$ (n = 2, 4). Crystal data: $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$, monoclinic, space group C2/m (no. 12), a = 27.538(2) ${\AA}$, b = 20.366(2) ${\AA}$, c = 11.9614(9) ${\AA}$, ${\beta}$ = 112.131(1)$^{\circ}$, Z = 8; $(NH_4)_{3.5}(C_3H_{12}N_2)_b[Ni(H_2O)_6]_{3.5}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$, triclinic, space group P-1 (no. 2), a = 17.7668(9) ${\AA}$, b = 17.881(1) ${\AA}$, c = 20.668(1) ${\AA}$, ${\alpha}$ = 86.729(1)$^{\circ}$, ${\beta}$ \ 65.77(1)$^{\circ}$, ${\gamma}$ = 80.388(1)$^{\circ}$, Z = 2.

• Bulletin of the Korean Chemical Society
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• v.7 no.2
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• pp.108-110
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• 1986

The solution epr spectra of ${\alpha}-1,2,3-[H_nPV(IV)V_2W_9O_{40}]^{(7-n)-}$were measured at various pH and three protonated species have been identified. The spectrum of $H_3PV(IV)Ⅴ_2$ consisting of 8 lines indicates that the V-OH-V bridge prevents effectively the electron transfer between the vanadium atoms. The spectrum of $H_2PV(IV)V_2$ consisting of 15 lines can be interpreted by assuming that the electron is hopping fast between the two vanadium atoms in the V-O-V sequence. The multi-line spectrum of $HPV(IV)V_2$ is interpreted as a poorly resolved 43-line spectrum which originates from the electron hopping among the three vanadium atoms with the forward and backward transition probabilities of 4:1 in the OH-V-O-V sequence.

• Journal of the Korean Applied Science and Technology
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• v.18 no.4
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• pp.254-260
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• 2001

The Mo(V) $di-{\mu}-oxo$ type [$Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$] $SO_{4}$ complexes(L: 2,2'-dipyridyl,4,4'-ethylenedianlline) have been prepared by the reaction of $[Mo_{2}O_{4}(H_{2}O)_{6}]SO_{4}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$, two $H_{2}O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, $^{1}H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at a scan rate of $50mVs^{-1}$, a cathodic peak at -0.81V ${\sim}$ -0.87V (vs SCE) and an anodic peak at -0.61V ${\sim}$ -0.63V (vs SCE) have been observed in aquous solution. We infer these redox are irreversible reaction.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.198-203
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• 1995

The Mo(V) $di-\mu-oxo$ type $(Mo_2O_4(H_2O)_2L)$ complexes $(L:\;C_3H_7CH(SCH_2COOH)_2,\;C_6H_5CH(SCH_2COOH)_2,\;CH_3OC_6H_4CH(SCH_2COOH)_2,\;C_5H_{10}C(SCH_2COOH)_2,\;C_3H_7C(CH_3)(SCH_2COOH)_2,\;C_3H_7CH(SCH_2CH_2COOH)_2,\;C_6H_5CH(SCH_2CH_2COOH)_2)$ have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of dithiodicarboxy ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate type between two molybdenum. In $Mo_2O_4(H_2O)_2L$, two $H_2O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, and nuclear magnetic resonance spectra. In the potential range -0.00 V to -1.00 V at a scan rate of 20 $mVs^{-1}$, a cathodic peak at -0.50∼-0.58 V (vs. SCE) and an anodic peak at -0.40∼-0.43 V (vs. SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current ($I_{pc}/I_{pa}$) is almost 1, we infer that redox is reversible reaction.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..