• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Journal of the Korean Magnetics Society
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• v.27 no.2
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• pp.41-48
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• 2017

Recent study shows that ordered alloy of $L1_2$ $XPt_3$ (M = V, Cr, Mn, Co, and Fe) exhibits various magnetic phases such as ferromagnetic-to-antiferromagnetic transition at the $MnPt_3$ surface. Moreover, it has been argued that $CrPt_3$, in particular, possess large magnetocrystalline anisotropy and Kerr rotation with possible violation of Hund's rule. As such, we extend our work to thickness dependence of the magnetic structure of $CrPt_3$ thin film using density functional theory. Magnetic ground state of the bulk $CrPt_3$ turns out to be ferromagnetic (FM), where other magnetic phases such as A-type (A-AF), C-type (C-AF), and G-type antiferromagnetic (G-AF) state have higher total energies than FM by 0.517, 0.591, and 0.183 eV, respectively, and magnetic moments of Cr in bulk are respectively 2.807 (FM), 2.805 (A-AF), 2.794 (C-AF) and $2.869_{{\mu}_B}$ (G-AF). We extend our study to $CrPt_3$(001) thin films with CrPt-and Pt-termination. The thickness and surface-termination dependences of magnetism are investigated for 3-9 monolayers (ML), where different magnetic phases from bulk emerge: C-AF for CrPt-terminated 3 ML and G-AF for Pt-terminated 5 ML have energy difference relative to FM by 8 and 54 meV, respectively. Furthermore, thickness- and surface-termination-dependent magnetocrystalline anisotropies of the $CrPt_3$(001) films are discussed.

• Applied Chemistry for Engineering
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• v.31 no.2
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• pp.179-186
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• 2020

In this study, chitosan/zeolite composites were prepared by using basalt-based zeolite impregnated with aqueous chitosan solution for the adsorptive separation of CO₂. The prepared composites were characterized by scanning electron microscopy (SEM), Fourier-transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption analysis. In addition, the adsorption equilibrium isotherms for CO₂ and N₂ were measured at 298 K using a volumetric adsorption system, and the results were analyzed by applying adsorption isotherm equations (Langmuir, Freundlich, and Sips) and energy distribution function. It was found that CO₂ adsorption capacities were well correlated with the structural characteristics of chitosan and zeolite, and the ratio of elements [N/C, Al/(Si + Al)] formed on the surface of the composite. Moreover, the CO₂/N₂ adsorption selectivity was calculated under the mixture conditions of 15 V : 85 V, 50 V : 50 V, and 85 V : 15 V using the Langmuir equation and the ideal adsorption solution theory (IAST).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of Pharmaceutical Investigation
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• v.37 no.3
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• pp.187-192
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• 2007

A reversed phase HPLC analysis of atorvastatin (AS) standard solution was performed using diclofenac (DF) as internal standard. Column oven temperature, flow rate and the composition of the mobile phase were varied in order to determine a practical system setup using a C18 column and UV detector. Two C18 columns of different length were compared regarding their influence on the AS peak shape. Based on these preliminary experiments a validation study was performed utilizing a C18 column at $62^{\circ}C$ with a mobile phase consisting of sodium phosphate buffer (0.05 M, pH 4.0), methanol and acetonitrile (40:50:10, v/v/v). The detection limit for AS was $0.1{\mu}g/ml$ and inter- and intra-day calibration curves were linear over a concentration range of $0.2-50{\mu}g/ml$. Accuracy and precision were satisfactory in the AS concentration range of $0.5-50{\mu}g/ml$.

• Journal of Surface Science and Engineering
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• v.28 no.6
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• pp.361-367
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• 1995

When steels are heated at $1000^{\circ}C$ in a fused borax bath containing $V_2O_5$ and $B_4C$powders, vanadium carbide layers are formed on the steel surfaces. Since a decrease in carbon concentration and in microhardness in the substrate just below the carbide layer has been observed, gas nitrocarburizing and vanadium carbide forming processes were combined to form a V(C,N) type layer which prevented the decrease in carbon concentration in the substrate. EPMA analysis was done for this V(C,N) type layer. Hardness just below the layer and wear resistance properties of such treated specimens were investigated.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.93-95
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• 2019

본 논문에서는 높은 스위칭 주파수에서의 SiC HEMT의 병렬 운전을 다룬다. 이를 위해 300 V/600 A SiC HEMT을 이용한 병렬 풀브릿지 시스템을 설계하고 검증한다. 병렬 운전시 발생하는 전류 불균형을 제한하기 위해 병렬 소자간 인덕턴스를 설계한다. 또한 최대 순시 손실을 계산하여 이를 방열할 수 있는 냉각 시스템을 구성한다. 더블 펄스 시험을 통해 설계된 시스템의 동적(dynamic) 전류 균형과 정적(static) 전류 균형을 평가한다. 60 kHz 스위칭 주파수에서의 500 Hz 600 A 교류 제어 실험을 통해 제어 성능과 순시 손실을 검증한다.

• Food Science and Biotechnology
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• v.18 no.4
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• pp.996-1000
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• 2009

Sapium japonicum was extracted by a pressurized liquid. Operating parameters such as the type and the ratio of solvent to water, temperature, pressure, and number of extractions were investigated as the main variables that influence the extraction efficiencies of total phenolics (TP). MeOH extracted the highest level of TP as 50.4 mg GAE/g compared to 48.8 and 27.2 mg GAE/g with $H_2O$ and EtOH, respectively. $EtOH:H_2O$ (40:60, v/v) was found to be the best solvent for TP extraction as 90.3 mg GAE/g compared to 85.0 and 84.3 mg GAE/g in 40:60 and 60:40 of $MeOH:H_2O$, respectively. TP were increased with the increase of the number of extraction steps. TP content was increased by 11% as the extraction temperature was increased from 40 (97.4) to $50{\circ}C$ (108.3 mg GAE/g). The optimum extraction conditions of TP were; extraction solvent, $EtOH:H_2O$ (40:60, v/v); temperature, $50{\circ}C$; pressure, 10.2 MPa; 2 extraction steps.

• Journal of Food Hygiene and Safety
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• v.15 no.2
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• pp.176-178
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• 2000

V parahaemolyticus possessed an extracellular alkaline pretense activity during the stationary growth phase. Various factors such as nitrogen sources, the concentration of NaCl and metal ions were investigated for optimizing the production of alkaline pretense from V. parahaemolyticus ATCC 17802. Among the nitrogen sources tested skim milk showed the distinct increase of the activity and the activity was the highest at 2% in final concentration after 60 hours incubation. The addition of NaCl and metal ions did not increase the alkaline pretense activity. CoC$_2$, CuC1$_2$, and HgCl rather highly inhibited alkaline protease production.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.436-440
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• 2009

The structural and electrical properties of $Al_2O_3/La_2O_3/Al_2O_3$ (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were 11 V for 10 ms (program) and -11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the $V_{th}$ distributions of all films were not changed up to about $10^4$ cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.