Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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A Study on the Electrical Properties of Al2O3/La2O3/Al2O3 Multi-Stacked Films Using Tunnel Oxide Annealed at Various Temperatures

  • Kim, Hyo-June (Department of Materials Science and Engineering, Yonsei University) ;
  • Cha, Seung-Yong (Department of Materials Science and Engineering, Yonsei University) ;
  • Choi, Doo-Jin (Department of Materials Science and Engineering, Yonsei University)
  • Published : 2009.07.31
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Abstract

The structural and electrical properties of $Al_2O_3/La_2O_3/Al_2O_3$ (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were 11 V for 10 ms (program) and -11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the $V_{th}$ distributions of all films were not changed up to about $10^4$ cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

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References

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