• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.10-14
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• 2003

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${\mu}m$-CsI:Na/30 ${\mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${\mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${\mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.170-173
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• 2001

Thin films of phase-pure perovskite (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) were deposited in-situ onto Pt/Ti/ $SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. Two-step process to grow (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Electrical properties including dielectric constant, ferroelectric characteristics, crystallization and leakage current of PLT thin films were shown to be strongly inf1uenced by grain size. Also PLT thin films on p-type(100) Si substrate will be fabricated by pulsed laser deposition technique using a Nd:YAG laser with different wavelengths of 355, 532 and 1064 nm. Effect of the variation of laser wavelength on dielectric properties will be discussed. Microstructural and electrical properties of the film were investigated by C-V measurement leakage current measurement and SEM.ent and SEM.

• Proceedings of the KIEE Conference
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• 2005.11b
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• pp.261-263
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• 2005

In the extra and ultra high voltage system, the coupling capacitor voltage transformer (CCVT) measures the primary voltage with a small scale of voltage transformer (VT). However, the CCVT generates errors caused by the hysteresis characteristics of iron core and by the ferroresonance, inevitably. This paper proposes a compensation algorithm for the secondary voltage of a CCVT considering the hysteresis characteristics of an iron core. The proposed algorithm calculates the seconda교 current of a VT by summing the current flowing the ferroresonance circuit and the burden current; it estimates the secondary voltage of a VT; then the core flux is calculated by integrating of the secondary voltage of a VT, then estimates the exciting current using ${\lambda}-i$ characteristic of the core. The method calculates a primary voltage of a VT considering the estimated primary current. Finally, the correct voltage is estimated by compensating the voltage across the inductor and capacitor. The performance of the proposed algorithm was tested in a 345kV transmission system. The test results show that the proposed method can improve the accuracy of the seconda교 voltage of a CCVT.

• Journal of Arbitration Studies
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• v.22 no.2
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• pp.125-157
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• 2012

This study is to vindicate the vacation of arbitral awards in the United States. It focuses on the harmony of case law with statutory law of the United States. Until the early twentieth century, the American legal system, having adopted the English common law view, harbored a hostile attitude toward arbitration. The purpose of the Federal Arbitration Act (FAA) of the United States, enacted in 1925, was to eliminate the hostile attitude of courts toward arbitration. Congress is to enforce arbitration agreements into which parties have entered and to place arbitration agreements upon the same footing as other contracts. The structure of grounds for vacating arbitration awards has two layers. One is of vacating grounds with statutory origins, such as the FAA and the Uniform Arbitration Act, and the other, of vacating grounds originating from a nonstatutory, case law background. For a while, vacatur based on case law has coexisted with vacatur on statutory grounds for arbitration awards. After the Supreme Court decision in Hall Street Associates, L.L.C. v. Mattel, Inc., however, the justification of vacating based on case law has weakened. Post-Hall Street decisions of circuit courts show ways to deal with manifest disregard of the law. One of them is the harmonization of the case law grounds for vacating with the statutory grounds. It seems that the manifest-disregard-of-law and public-policy exceptions show a possibility of survival after Hall Street. However, other nonstatutory grounds for vacation of arbitration awards have no firm basis after Hall Street.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.743-747
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• 2003

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

• Journal of Hydrogen and New Energy
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• v.20 no.2
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• pp.95-103
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• 2009

In order to improve the electrochemical, mechanical and electrocatalytic characteristics, engineering plastic of polyether ether ketone (PEEK) as polymer matrix was sulfonated (SPEEK) and the organic-inorganic blend composite membranes has been prepared by loading heteropoly acids (HPAs), including tungstophosphoric acid (TPA), molybdophosphoric acid (MoPA), and tungstosilicic acid (TSiA). And then these were covalently cross-linked (CL-SPEEK/HPA) as the electrolyte and MEA of polymer electrolyte membrane electrolysis (PEME). As a result, the optimum reaction conditions of CL-SPEEK/HPA was established and the electrochemical characteristics such as ion conductivity ($\sigma$) were in the order of magnitude: CL-SPEEK /TPA30 (${\sigma}=0.128\;S/cm^{-1}$) < /MoPA40 (${\sigma}=0.14\;S/cm^{-1})$ < /TSiA30 (${\sigma}=0.22\;S/cm^{-1}$) at $80^{\circ}C$, and mechanical characteristics such as tensile strength: CL-SPEEK /TSiA30 $\fallingdotseq$ /MoPA40 < /TPA30. Consequently, in regards of above characterisitics and oxidation durability, the CL-SPEEK/TPA30 exhibited a better performance in PEME than the others, but CL-SPEEK/MoPA40 showed the best electrocatalytic activity of cell voltage 1.71 V among the composite membranes. The dual effect of higher proton conductivity and electrocatalytic activity with the addition of HPAs, causes a synergy effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.163-166
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• 2004

모바일향 90nm DRAM을 개발하기 위하여 비대칭 채널 구조를 갖는 Recess Channel Array Transistor (RCAT)로 cell transistor를 구현하였다. DRAM cell transistor에서 junction leakage current 증가는 DRAM retention time 열화에 심각한 영향을 미치는 요인으로 알려져 있으며, DRAM의 minimum feature size가 점점 감소함에 따라 short channel effect의 영향으로 junction leakage current는 더욱 더 증가하게 된다. 본 실험에서는 short channel effect의 영향에 의한 junction leakage current를 감소시키기 위하여 Recess Channel Array Transistor를 도입하였고, cell transistor의 채널 영역을 비대칭으로 형성하여 data retention time을 증가시켰다. 비대칭 채널 구조을 이용하여 Recess Channel Array Transistor를 구현한 결과, sub-threshold 특성과 문턱전압, Body effect, 그리고, GIDL 특성에는 큰 유의차가 보이지 않았고, I-V특성인 드레인 포화전류(IDS)는 대칭 채널 구조인 transistor 대비 24.8% 정도 증가하였다. 그리고, data retention time은 2배 정도 증가하였다. 본 실험에서 얻은 결과는 향후 저전압 DRAM 개발과 응용에 상당한 기여를 할 것으로 기대된다.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.638-642
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• 2010

The spinel material $Li_4Ti_5O_{12}$ has attracted considerable attention as an anode electrode material for many battery applications owing to its light weight and high energy density. However, the real capacity of $Li_4Ti_5O_{12}$ powder as determined by the solid-state method is lower than the ideal capacity. In this study, we investigated the effect of the dopants in M-doped spinel $Ba_xLi_{4-2x}Ti_5O_{12}$(x=0.005, 0.05, 0.1) powders prepared by the solid-state reaction method and used as the anode material in lithiumion batteries. The results confirmed the effect of the Ba and Sr dopants on the powder properties of the spinel $Li_4Ti_5O_{12}$, which exhibited a pure spinel structure without any secondary phase in its XRD pattern. Moreover, the electrochemical properties of the spinel M-LTO materials were investigated using a half cell. The electrochemical data show that cells with anodes made of undoped $Li_4Ti_5O_{12}$ and Ba- and Sr-doped $Li_4Ti_5O_{12}$ have discharge capacities of 97, 130, and 112 mAh/g, respectively, at the first cycle. Moreover, the Ba- and Sr-doped spinel $Li_4Ti_5O_{12}$ demonstrated good properties in the mid-voltage range at 1.55 V, showing stable cyclic voltammogram properties which surpassed those of the same material without Ba or Sr at 1 C after 100 cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.310-310
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• 2010

ZnO 바리스터는 정전기 (ESD) 및 순간적인 써지(surge)로부터 전자기기 및 전자회로 등을 보호하기 위해 개발된 전자 세라믹스 소재이다. 최근 전자기기 등의 고속통신 추세에 따라 ZnO 바리스터는 높은 비선형 특성과 함께 보다 낮은 유전율 및 유전손실 특성이 특별히 요구되고 있다. 본 연구에서는 현재 양산되고 있는 Bi-계와 Pr-계 ZnO 바리스터가 아닌 새로운 조성계에 $Mn_3O_4$를 0.0~3.0 at% 첨가하여 소결 및 전기적 특성들 살펴보았다. 시편은 일반적인 세라믹 공정에 따라 제조하여 $1200^{\circ}C$에서 1 시간 공기 중에서 소결하였으며, 소결 및 전기적 특성과 유전 특성(밀도, 미세구조, I-V 특성, 유전율, 유전손실, ZnO 비저항)은 FE-SEM, Keithley237, Agilent 4294a 및 Agilent 4991a 장비를 사용하여 첨가제에 따른 ZnO 바리스터의 특성 변화를 관찰하였다. 그 결과 Mn이 0.2 at% 첨가한 계의 바리스터의 상대밀도는 95%, 비선형계수는 14, 유전율은 140 (at 1MHz), 손실값은 0.147 (at 1 MHz)를 나타내었다. 이를 통하여 새로운 바리스터 조성계에서 Mn의 첨가에 따른 효과에 대하여 논하였다.