• Title/Summary/Keyword: V2C

Search Result 9,802, Processing Time 0.043 seconds

Effects of Sohaphyang-won on the Gene Expression in a Hypoxic Model of Cultured Rat Cortical Cells (배양한 흰쥐 대뇌세포의 저산소증 모델에서 소합향원이 유전자 표현에 미치는 영향)

  • 백진원;이영효;김완식;정승현;신길조;이원철
    • The Journal of Korean Medicine
    • /
    • v.25 no.2
    • /
    • pp.127-137
    • /
    • 2004
  • Objectives : The purpose of this investigation was to evaluate the effects of Sohaphyang-won (SH) on the alteration in gene expression in a hypoxia model using cultured rat cortical cells. Methods : E18 rat cortical cells were grown in neurobasal medium containing B27 supplement. On 12 DIV, SH was added ($20\mu\textrm{g}/ml$) to the culture media for 24 hrs. On 14 DIV, cells were given a hypoxic insult (2% O2/5% CO2, $37^{\circ}C$, 3 hrs), returned to normoxia and cultured for another 24 hrs. Total RNA was prepared from SH-untreated (control) and -treated cultures and alteration in gene expression was analyzed by microarray using rat 5K-TwinChips. Results : Effects on some of the genes whose functions are implicated in neural viability are as follows: 1) For most of the genes altered in expression, the global M values were between -05 to +0.5, Among these, 1517 genes were increased in their expression by more than global M +0.1, while 1480 genes were decreased by more than global M -0.1. 2) The expression of apoptosis-related genes such as Bad (global M =0.35), tumor protein p53 (T53) (global M =0.28) were increased, while v-akt murine thymoma viral oncogene homolog 1 (Akt1) was decreased. 3) The expression of hemoglobin alpha 1 (probably neuroglobin) was increased by about 3.2-fold (global M =1.7). 4) The expression of antioxidation-related catalase gene was increased (global M =0.26). 5) The expression of PKCzeta (prkcz), an upstream kinase of MAPK, was increased (global M =0.29). 6) The expression of retinoic acid receptor alpha (RAR), which may regulate transcription in hypoxic stress, was increased (global M =10.27). Conclusions : In summary, the microarray data suggest that SH doesn't increase the expression of oxygen capture-, anti-oxidation- and 'response to stress' -related genes but decreases some anti-apoptosis genes which would help protect the hypoxic cells from apoptosis.

  • PDF

Novel Alkali-Stable, Cellulase-Free Xylanase from Deep-Sea Kocuria sp. Mn22

  • Li, Chanjuan;Hong, Yuzhi;Shao, Zongze;Lin, Ling;Huang, Xiaoluo;Liu, Pengfu;Wu, Gaobing;Meng, Xin;Liu, Ziduo
    • Journal of Microbiology and Biotechnology
    • /
    • v.19 no.9
    • /
    • pp.873-880
    • /
    • 2009
  • A novel xylanase gene, Kxyn, was cloned from Kocuria sp. Mn22, a bacteria isolated from the deep sea of the east Pacific. Kxyn consists of 1,170 bp and encodes a protein of 390 amino acids that shows the highest identity (63%) with a xylanase from Thermohifida fusca YX. The mature protein with a molecular mass of approximately 40 kDa was expressed in Escherichia coli BL21 (DE3). The recombinant Kxyn displayed its maximum activity at $55^{\circ}C$ and at pH 8.5. The $K_m,\;V_{max}$, and $k_{cat}$ values of Kxyn for birchwood xylan were 5.4 mg/ml, $272{\mu}mol/min{\cdot}mg$, and 185.1/s, respectively. Kxyn hydrolyzed birchwood xylan to produce xylobiose and xylotriose as the predominant products. The activity of Kxyn was not affected by $Ca^{2+},\;Mg^{2+},\;Na^+,\;K^+$, ${\beta}$-mercaptoethanol, DTT, or SDS, but was strongly inhibited by $Hg^{2+},\;Cu^{2+},Zn^{2+}$, and $Pb^{2+}$. It was stable over a wide pH range, retaining more than 80% activity after overnight incubation at pH 7.5-12. Kxyn is a cellulase-free xylanase. Therefore, these properties make it a candidate for various industrial applications.

Effects of Coptidis Rhizoma and Aconiti Lateralis Preparata Radix on the Change of Plasma Corticosterone Level and Rectal Temperature Induced by LPS (LPS에 의해 유발된 염증(炎症) 스트레스에 대한 황련(黃蓮)과 부자(附子)의 효과)

  • Cho, Eun-Ho;Lee, Tae-Hee
    • The Korea Journal of Herbology
    • /
    • v.21 no.2
    • /
    • pp.77-85
    • /
    • 2006
  • Objectives : We investigated the effects of Coptidis Rhizoma and Aconiti Lateralis Preparata Radix on the LPS(Lipopolysaccharide) ICV(intracerebroventricular) injection. Methods : We measured plasma corticosterone level and rectal temperature in mice induced by I.C.V. injection of LPS (100ng/mouse). Results : The results were as follows.. 1. The plasma corticosterone levels in CR-1(0.5g/kg), CR-2(1.0g/kg), CR-3(3.0g/kg) were not decreased significant comparing with the control group.(P<0.05) 2. The plasma corticosterone level in AR-1(0.5g/kg) was decreased significant comparing with the control group.(P<0.05), but AR-2(1.0g/Kg) and AR-3(3.0g/kg) were not decreased significant comparing with the control group.(P<0.05). 3. The rectal temperature in CR-1(0.5g/kg), CR-2(1.0g/kg), CR-3(3.0g/kg) was decreased significant comparing with the control group.(P<0.05) 4. The rectal temperature in AR-1(0.5g/kg), AR-2(1.0g/kg), AR-3(3.0g/kg) was not decreased significant comparing with the control group.(P<0.05) Conclusion : These data revealed that Rhizoma Coptidis might have no significant effect on inflammation stress and Aconiti Lateralis Preparata Radix(0.5g/kg/mouse) might have significant effect on inflammation stress.

  • PDF

Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices: Synthesis and Application Test

  • Park, Young-Ran;Nam, Eun-Kyoung;Boo, Jin-Hyo;Jung, Dong-Geun;Suh, Su-Jeong;Kim, Young-Sung
    • Bulletin of the Korean Chemical Society
    • /
    • v.28 no.12
    • /
    • pp.2396-2400
    • /
    • 2007
  • Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

Pharmacokinetics and Tissue Distribution of Recombinant Human Erythropoietin (DA-3285) in the Laboratory Animals (Recombinant human erythropoietin (DA-3285)의 실험동물에서의 약동력학 및 조직분포)

  • 심현주;이응두;이종진;김흥재;이상득;이성희;김원배;양중익
    • Biomolecules & Therapeutics
    • /
    • v.4 no.1
    • /
    • pp.78-83
    • /
    • 1996
  • The pharmacokinetics and tissue distribution of DA-3285 (recombinant human erythropoietin, recently manufactured by Research Laboratories of Dong-A Pharmaceutical Company) were studied in the laboratory animals. The plasma, urine, and tissue concentration of DA-3285 were measured by a double-antibody sandwich enzyme immunoassay. After intravenous administration of DA-3285, 20, 100, 500 and 2500 units/kg to rats, the plasma concentrations declined polyexponentially with the terminal half-lives of 2.15, 2.10, 2.31, and 2.35 hr, respectively. Total body clearance (20.7∼26.6 mι/hr/kg) and apparent volume of distribution at steady state (57.2∼70.1 mι/kg) were independent of the dose and AUC increased proportionally with the dose. The renal clearance was much lower than total body clearance, suggesting that extrarenal clearance, presumably metabolism , plays a significant role in elimination of DA-3285. In all rat tissues, the tissue to plasma ratios were smaller than unity, indicating less affinity of DA-3285 to rat tissues and was proved by considerably less value of Vdss. After 3 times a week for consecutive 3 weeks i.v. administration of DA-3285, 100 units/kg to rats, the plasma concentrations and pharmacokinetic parameters of DA-3285 were not significantly different from those in a single administration. After s.c. administration to the rat, plasma concentrations of DA-3285 peaked at 6 hr and the extent of bioavailability was 26.7%. In mice, rabbits and dogs, at DA-3285 dose of 100 units/kg, the mean terminal haw-lives were 2.78, 3.05, and 4.01 hr, respectively. Compared with reported data in the literatures, DA-3285 has similar properties to rh-EPO manufactured by other companies in view of pharmacokinetics.

  • PDF

Fabrication of a Large-Area $Hg_{1-x}Cd_{x}$Te Photovoltaic Infrared Detector ($Hg_{1-x}Cd_{x}$Te photovoltaic 대형 적외선 감지 소자의 제작)

  • Chung, Han;Kim, Kwan;Lee, Hee-Chul;Kim, Jae-Mook
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.31A no.2
    • /
    • pp.88-93
    • /
    • 1994
  • We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

  • PDF

Effects of Garlic Oil on Pancreatic Cancer Cells

  • Lan, X.Y.;Sun, H.Y.;Liu, J.J.;Lin, Y.;Zhu, Z.Y.;Han, X.;Sun, X.;Li, X.R.;Zhang, H.C.;Tang, Z.Y.
    • Asian Pacific Journal of Cancer Prevention
    • /
    • v.14 no.10
    • /
    • pp.5905-5910
    • /
    • 2013
  • Background: To investigate the preventive and therapeutic potential of garlic oil on human pancreatic carcinoma cells. Methods: The 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyl-tetrazolium bromide (MTT) assay was performed to study the effects of garlic oil on three human pancreatic cancer cell lines, AsPC-1, Mia PaCa-2 and PANC-1. Cell cycle progression and apoptosis were detected by flow cytometry (FCM), staining with PI and annexin V-fluorescein isothiocyanate (FITC)/propidium iodide (PI), respectively. Morphologic changes of pancreatic cancer cells were observed under transmission electron microscopy (TEM) after treatment with garlic oil at low inhibitory concentrations ($2.5{\mu}M$ and $10{\mu}M$) for 24 hours. Results: Proliferation of the AsPC-1, PANC-1, and Mia PaCa-2 cells was obviously inhibited in the first 24 hours with the MTT assay. The inhibition effect was more significant after 48 hours. When cells were exposed to garlic oil at higher concentrations, an early change of the apoptotic tendency was detected by FCM and TEM. Conclusion: Garlic oil could inhibit the proliferation of AsPC-1, PANC-1, and Mia PaCa-2 cells in this study. Moreover, due to programmed cell death, cell cycle arrest, or both, pro-apoptosis effects on AsPC-1 cells were induced by garlic oil in a dose and time dependent manner in vitro.

Effects of Sputter Deposition Sequence and Sulfurization Process of Cu, Zn, Sn on Properties of Cu2ZnSnS4 Solar Cell Material (Cu, Zn, Sn의 스퍼터링 적층방법과 황화 열처리공정이 Cu2ZnSnS4 태양전지재료 특성에 미치는 효과)

  • Park, Nam-Kyu;Arepalli, Vinaya Kumar;Kim, Eui-Tae
    • Korean Journal of Materials Research
    • /
    • v.23 no.6
    • /
    • pp.304-308
    • /
    • 2013
  • The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

Dry Etch Characteristic of Ferroelectric $YMnO_3$ Thin Films Using High Density $Ar/Cl_{2}CF_{4}\;PAr/Cl_{2}/CF_{4}$ 고밀도lasma ($Ar/Cl_{2}/CF_{4}$ 고밀도 플라즈마를 이용한 강유전체 $YMnO_3$의 건식식각 특성연구)

  • Park, Jae-Hwa;Kim, Chang-Il;Chang, Eui-Goo;Lee, Cheol-In;Lee, Byeong-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.213-216
    • /
    • 2001
  • Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

  • PDF

CHaracteristics of (Pb,La)T$TiO_3$ Thin Film by Deposition Condition of Pulsed Laser Ablation (레이저 어블레이션에 의한 (Pb,La)$TiO_3$박막의 제작조건에 따른 특성)

  • 박정흠;박용욱;마석범
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.12
    • /
    • pp.1001-1007
    • /
    • 2001
  • In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

  • PDF