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Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices: Synthesis and Application Test

  • Park, Young-Ran (Department of Physics, Institute of Basic Science and Center for Nanotubes and Nanocomposites, Sungkyunkwan University) ;
  • Nam, Eun-Kyoung (Department of Physics, Institute of Basic Science and Center for Nanotubes and Nanocomposites, Sungkyunkwan University) ;
  • Boo, Jin-Hyo (Department of Chemistry and Institute of Basic Science, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Department of Physics, Institute of Basic Science and Center for Nanotubes and Nanocomposites, Sungkyunkwan University) ;
  • Suh, Su-Jeong (Advanced Material Process of Information Technology, Sungkyunkwan University) ;
  • Kim, Young-Sung (Advanced Material Process of Information Technology, Sungkyunkwan University)
  • Published : 2007.12.20

Abstract

Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

Keywords

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