• The Korean Journal of Physiology and Pharmacology
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• v.11 no.1
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• pp.15-20
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• 2007

To investigate whether hydrogen peroxide($H_2O_2$) affects intestinal motility, pacemaker currents and membrane potential were recorded in cultured interstitial cells of Cajal(ICC) from murine small intestine by using a whole-cell patch clamp. In whole cell patch technique at $30^{\circ}C$, ICC generated spontaneous pacemaker potential under current clamp mode(I=0) and inward currents(pacemaker currents) under voltage clamp mode at a holding potential of -70 mV. When ICC were treated with $H_2O_2$ in ICC, $H_2O_2$ hyperpolarized the membrane potential under currents clamp mode and decreased both the frequency and amplitude of pacemaker currents and increased the resting currents in outward direction under voltage clamp mode. Also, $H_2O_2$ inhibited the pacemaker currents in a dose-dependent manner. Because the properties of $H_2O_2$ action on pacemaker currents were same as the effects of pinacidil(ATP-sensitive $K^+$ channels opener), we tested the effects of glibenclamide(ATP-sensitive $K^+$ channels blocker) on $H_2O_2$ action in ICC, and found that the effects of $H_2O_2$ on pacemaker currents were blocked by co- or pre- treatment of glibenclamide. These results suggest that $H_2O_2$ inhibits pacemaker currents of ICC by activating ATP-sensitive $K^+$ channels.

• Journal of the Korean Chemical Society
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• v.32 no.4
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• pp.318-322
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• 1988

We studied the aquation reaction of s-cis-$[Co(eee)Cl_2]^+$ and s-cis-$[Co(eee)Br_2]^+$ complex ions under the various temperatures and pressures. In these complexes eee is $NH_2-CH_2CH_2-S-CH_2CH_2-NH_2$. The rate law of the aquation reactions of these two complexes obeys $Rate = k_{obsd}$[CO(III)], where rate constants of s-cis-$Co(eee)Cl_2]^+$ and s-cis-$[Co(eee)Br_2]^+$ respectively are $0.687{\times}10^{-4}$ $sec^{-1}$ and $4.10{\times}10^{-4}$ $sec^{-1}$ in condition of 0.1M $HClO_4\;and\;40^{\circ}C$. In the same condition, the activation entropies of s-cis-[Co(eee)$Cl_2$]+ and s-cis-(Co(eee)Br_2$]+ complexes respectively are -15.5 eu and -7.54eu, and the activation volumes are $-4.6cm^3mole^{-1}$ and $-4.2cm^3mole^{-1}$. From these data, we could infer the mechanism of the aquation reaction as the interchange dissociation (Id) mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.398-398
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• 2012

SnO2 나노세선은 n-형 전기적 성질과 화학적인 안정성 때문에 가스센서, 투명 전극 및 태양전지와 같은 전자소자와 광소자에 널리 사용되고 있다. 화학 기상 증착, 전자빔 증착과 전기화학증착법을 사용하여 SnO2 나노세선을 제작하고 있다. 여러 가지 증착 방법중에서 전기화학증착방법은 낮은 온도와 진공 공정이 필요하지 않으며 대면적 공정이 가능하고 빠른 성장 속도로 나노구조를 효과적으로 성장할 수 있는 장점을 가지고 있다. 본 연구에서는 전기화학증착법을 이용하여 Indium Tin Oxide (ITO) 기판 위에 SnO2 나노세선 성장하고 성장시간에 따라 형성한 SnO2 나노세선의 구조적 성질을 조사하였다. SnO2 나노세선을 성장하기 위하여 D.I. water와 Entanol을 7:3의 비율로 섞은 용액을 $65^{\circ}C$로 유지하였고, 0.015 M의 Tin chloride pentahydrate ($Cl4{\cdot}Sn{\cdot}5H2O$)를 타겟 물질로 이용하였고, 0.1 M의 Potassium chloride (KCl)를 완충 물질로 사용하였다. 전기화학증착 방법을 사용하여 제작한 ITO 기판위에 성장한 SnO2 나노세선 위에 전극을 제작하고 전류-전압 특성을 측정하였다. SnO2 나노세선이 성장되는 전기화학증착 전압을 1.2 V로 고정하고, 성장시간을 15분, 30분 및 1시간으로 변화하여 SnO2 나노세선의 구조적 특성을 분석하였다. X-선회절 (X-ray diffraction; XRD) 실험 결과는 $31^{\circ}$에서 (101) 성장방향을 갖는 SnO2 나노세선이 성장함을 확인하였고, 성장 시간이 길어짐에 따라(101) 성장방향의 XRD 피크의 intensity가 증가하였다. 전기화학증착 성장 시간이 길어짐에 따라 SnO2 나노세선의 지름이 60 nm에서 150 nm로 변화하는 것을 주사전자현미경으로 관측하였다. 이 실험 결과는 전기화학증착방법을 사용하여 제작한 SnO2 나노세선의 성장 시간에 따른 구조적 특성들을 최적화하여 소자제작에 응용하는데 도움이 된다.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.913-918
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• 2014

Five mol % tungsten-doped tin oxide ($W_{0.05}Sn_{0.95}O_2$, TTO5) was prepared by co-precipitation of $SnCl_4{\cdot}5H_2O$ and $WCl_4$, followed by calcination at $1000^{\circ}C$. The as-prepared TTO5 was in the pure cassiterite phase with a particle size of ~50 nm and optical bandgap of 2.51 eV. Herein it was applied for the formation of TTO5/$TiO_2$ heterojunctions by covering the TTO5 surface with $TiO_2$ by sol-gel method. Under visible-light irradiation (${\lambda}{\geq}420$ nm), TTO5/$TiO_2$ showed a significantly high photocatalytic activity in removing gaseous 2-propanol (IP) and evolving $CO_2$. It is deduced that its high visible-light activity is caused by inter-semiconductor holetransfer between the valence band (VB) of TTO5 and $TiO_2$, since the TTO5 nanoparticle (NP) exhibits the absorption edge at ~450 nm and its VB level is located more positive side than that of $TiO_2$. The evidence for the hole-transport mechanism between TTO5 and $TiO_2$ was also investigated by monitoring the holescavenging reaction with 1,4-terephthalic acid (TA).

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.269-273
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• 2002

The NASICON solid electrolyte films, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$(1.5< x < 2.3), was prepared from ceramic slurry by modified doctor-blade process. The NASICON solid electrolyte and fabricated sensors, Pt-electrode/NASICON/Carbonate$(Na_2CO_3-K_2CO_3CaCO_3\; system)$ electrode, were investigated to measure phase, microstructure and e.m.f variation for sensing $CO_2$ concentration. The uniform grain size of $2-4{\mu}m$ and major phase of sodium zirconium silicon phosphate phase, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$was identified with X-ray diffraction patterns and scanning electron microscopy, respectively. The Nernst's slope of 84 mV/decade for $CO_2$ concentration from 500 to 8000 ppm was obtained at operating temperature of $400^{\circ}C$.

• Journal of Veterinary Science
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• v.21 no.2
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• pp.33.1-33.15
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• 2020

Bovine ephemeral fever virus (BEFV) causes bovine ephemeral fever, which can produce considerable economic damage to the cattle industry. However, there is limited experimental evidence regarding the underlying mechanisms of BEFV. Annexin A2 (AnxA2) is a calcium and lipid-conjugated protein that binds phospholipids and the cytoskeleton in a Ca²⁺-dependent manner, and it participates in various cellular functions, including vesicular trafficking, organization of membrane domains, and virus proliferation. The role of the AnxA2 gene during virus infection has not yet been reported. In this study, we observed that AnxA2 gene expression was up-regulated in BHK-21 cells infected with the virus. Additionally, overexpression of the AnxA2 gene promoted the release of mature virus particles, whereas BEFV replication was remarkably inhibited after reducing AnxA2 gene expression by using the small interfering RNA (siRNA). For viral proteins, overexpression of the Matrix (M) gene promotes the release of mature virus particles. Moreover, the AnxA2 protein interaction with the M protein of BEFV was confirmed by GST pull-down and co-immunoprecipitation assays. Experimental results indicate that the C-terminal domain (268-334 aa) of AxnA2 contributes to this interaction. An additional mechanistic study showed that AnxA2 protein interacts with M protein and mediates the localization of the M protein at the plasma membrane. Furthermore, the absence of the AnxA2-V domain could attenuate the effect of AnxA2 on BEFV replication. These findings can contribute to elucidating the regulation of BEFV replication and may have implications for antiviral strategy development.

• Journal of the Korean Chemical Society
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• v.31 no.2
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• pp.168-177
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• 1987

The equilibria of chemical reaction between $\alpha$-Ni(rac-[14]-decane)$^{2+}$ and polar solvents(L; ANT, MFA, DMSO, DMF, and DMA) have been investigated by the spectrophotometric method at $25^{\circ}C$. (The equilibrium constants($K_1$) of) the first step in ANT, MFA, DMSO, DMF, and DMA were 31.0, 27.5, 21.3 15.9, and 6.4, respectively. The smallness of equilibrium constants ($K_2$) of the second step compared with $K_1$, was observed. $\alpha$-Ni(rac-[14]-dacane)$^{2+}$ + L $\leftrightharpoons$ [$\alpha$-Ni(rac-[14]-decane){\cdot}L]$^{2+}$ : $K_1$.[$\alpha$-Ni(rac-[14]-decane){\cdot}L)$^{2+}$+ L $\leftrightharpoons$ [$\alpha$-Ni(rac-[14]-decane){\cdot}$L_2$)$^{2+}$ :$K_2$. The relationship between d-d absorption energy and half-wave potential of complex ions at ACT was considered. Macrocyclic ligands increasing d-d transition energy caused half-wave potentials of Ni(II)-macrocycle to be shifted more positively. The half-wave potentials for Ni(rac-1[14]7-diene)$^{2+}$, Ni(meso-1[14]7-diene)$^{2+}$, Ni(1[14]4-diene)$^{2+}$, $\alpha$-Ni(rac-[14]-decane)$^{2+}$, ${\beta}-Ni(rac-[14]-decane)$^{2+}$, and Ni(meso-[14]-decane)$^{2+}$ reductions were -1.419, -1.431, -1.450, -1.473, and -1.480 (V vs. SCE), respectively. The d-d transition energies ($\nu_{max},\;cm^{-1}$) of the Ni(meso-[14]-decane)$^{2+}$ isomer were discussed with the dielectric constant (${\varepsilon}/{\varepsilon}_0$) of the various solvents, $\nu_{max}(cm^{-1})$ increased with increasing ${\varepsilon}/{\varepsilon}_0$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.939-943
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• 2011

In this paper, reliability of the two sandwiched MIM capacitors of $Al_2O_3-HfO_2-Al_2O_3$ (AHA) and $SiO_2-HfO_2-SiO_2$ (SHS) with hafnium-based dielectrics was analyzed using two kinds of voltage stress; DC and AC voltage stresses. Two MIM capacitors have high capacitance density (8.1 fF/${\mu}m^2$ and 5.2 fF/${\mu}m^2$) over the entire frequency range and low leakage current density of ~1 nA/$cm^2$ at room temperature and 1 V. The charge trapping in the dielectric shows that the relative variation of capacitance (${\Delta}C/C_0$) increases and the variation of voltage linearity (${\alpha}$/${\alpha}_0$) gradually decreases with stress-time under two types of voltage stress. It is also shown that DC voltage stress induced greater variation of capacitance density and voltage linearity than AC voltage stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.383-390
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• 2001

We have investigated the L $i_{1+x}$M $n_2$ $O_4$system as a cathode material for lithium rechargeable batteries. To improve the cycle performance of spinel LiM $n_2$ $O_4$ as the cathode of 4V class lithium secondary batteries, spinel phase L $i_{1+x}$M $n_2$ $O_4$(x=0, 0.025, 0.05, 0.075) was prepared at 75$0^{\circ}C$ for 48h. The preparation of L $i_{1+x}$M $n_2$ $O_4$ from L $i_2$ $O_3$ and Mn $O_2$ under air is studied. The compounds were synthesized by using solid-state reaction. Structural refinements were carried out with a Rietveld-refinement program. Electrochemical properties were examined using the Li/L $i_{1+x}$M $n_2$ $O_4$ cells. The capacity of L $i_{1+x}$M $n_2$ $O_4$ decreases with increases lithium content, while the cycle life improves. The initial discharge capacity are 118mAh/g and 116mAh/g for LiM $n_2$ $O_4$ decreases with increases lithium content, while the cycle life improves. The initial discharge capacity are 118mAh/g and 116mAh/g for LiM $n_2$ $O_4$ and L $i_{1.025}$M $n_2$ $O_4$, respectively.pectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.