• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.85-89
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• 1997

A microstructure of realistic ZnO varistor was constructed by Voronoi network and studied cia computer simulation. The grain size and standard deviation was calculated with new method and have good agreement with experimental data. In this network, the grain boundary conditions of three different type are randomly distributed. The three electrical boundary conditions . (1) type A junctions (high nonlinearity); (2) type B junctions (low nonlinearity); (3) type C junctions (linear with low-resistivity) are fitted from the experimental measurement. The electrical properties were studied by varying the boundary type concentration and the disorder parameter d. The shape of I-V characteristic curve of the network is affected by the type concentration and the disorder parameter has an effect on the double inflected region.

• IE interfaces
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• v.13 no.2
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• pp.157-165
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• 2000

In this paper, an efficient method is proposed to place the cooling lines(CLS) and ejector pins(EPS) of mold design. The other components of mold, except CLS and EPS, can be generated automatically by batch processing. But the placements and sizes of CLS and EPS depend on the shapes of a part, so that the design works of CLS and EPS should be processed interactively. Using the pre-defined reference points, the positions of CLS and EPS can be determined interactively. By the proposed method, the interference occurred during placing CLS and EPS can be avoided, and the proper lengths of them can be calculated automatically. The information of the positions and lengths are stored in BOM database for generating a machining data. The proposed method is implemented with Unigraphics API functions and C language, tested on Unigraphics V15.

• Proceedings of the Korean Information Science Society Conference
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• 2004.10a
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• pp.694-696
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• 2004

본 논문에서는 32$\times$32비트 곱셈 연산의 하위 32비트 결과를 한 클록 주기에 얻기 위한, 130MHz 파이프라인용 SIMD형 2단 곱셈 누산기를 설계하였다. 이 과정에서, Booth 부호기의 부분곱의 생성에 소요되는 지연을 줄이면서 부호가 있는 수의 연산을 수행할 수 있는 Booth 부호기를 설계하였다. 생성된 부분곱을 SIMD 명령어에 따라 크기가 선택된 Wallace Tree로 합산하고, 32$\times$32비트 곱셈 연산의 하위 32비트 결과를 제외한 모든 결과들은 두 번째 파이프라인 단에서 얻어지도록 하였다 현재 설계된 SIMD형 곱셈 누산기는 삼성 0.18$\mu\textrm{m}$ 표준 셀로 합성할 때, 1.65V, +1$25^{\circ}C$에서 약 7.61㎱의 임계 경로 지연을 갖는다

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.130-131
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• 2012

본 논문은 확장 칼만 필터(EKF)를 이용하여 배터리의 SOC(State-of-Charge) 추정 방법을 제안하였다. EKF는 정확한 모델에서만 제대로 동작 할 수 있다. 따라서, 본 논문은 EKF의 적용을 위해 높은 정확도를 가진 전기적 배터리 모델에 대해 설명한다. 배터리 모델은 4.2V, 40Ah의 리튬폴리머 전지에서 추출되었다. 배터리는 Bulk 커패시터, 두 개의 R-C회로, 직렬 저항을 사용하여 모델링하였다. EKF를 모델에 적용하기 위해 캐패시터 전압은 개방 회로 전압(OCV)을 나타내는데 사용된다. EKF는 충/방전 기기인 Maccor 8500에 의해 얻을 실험 데이터로 테스트하였다. 테스트 결과에서 추정의 오차가 최대 5% 정도로 줄일 수 있다는 것을 보여준다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.546-547
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• 2007

Magnesium is widely used as a lightweight alloy for car engine components and case of cellular phone. Extraction technologies of magnesium are divided to fused salt electrolysis process and thermal reduction process. In this study, electrolysis magnesium is prepared by fused salt electrolysis process with magnesium chloride. We compared two kinds of mixed salt at 7V. As a result, 47% of current efficiency was obtained by electrolyzing KCl/NaCl/$MgCl_2$ mixed salt bath at $760^{\circ}C$, and purity of the prepared magnesium was over 98%. With this study, we can scale up fused salt electrolysis device and accumulate basic data which will be needed for designing an electrolysis cell.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1319-1320
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• 2007

본 연구는 ZnO 박막을 유도 결합 플라즈마를 이용하여, $BCl_3$/Ar 가스 혼합비, RF 전력, 직류 바이어스 전압과 공정 압력을 변경하면서 실험하였다. ZnO 박막의 최고 식각속도는 80%의 $BCl_{3}/(BCl_{3}+Ar)$에서 700 W의 RF 전력, -150 V의 직류 바이어스 전압, 15 mTorr의 공정 압력, $28^{\circ}C$의 기판 온도로 고정시켰을 때 50 nm/min 이었다. 이 조건에서 ZnO 박막과 $SiO_2$의 선택비는 0.75 이었다.

• Electrical & Electronic Materials
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• v.5 no.1
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• pp.28-42
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• 1992

본 논문에서는 ZnO 바리스터의 유전특성에 대해 검토하였다. 25~75[.deg.C]의 온도에서 1[kHz]~13[MHz]의 부파수 범위에서 LCR meter와 computer로 구성된 측정장치를 사용하여 정전용량-주파수, 및 손실계수-주파수의 관계를 측정하였다. 수학적 해석 방법에 의해 복소유전율의 실험결과로 부터 3-4개의 Debye 피크를 추출할 수 있었다. 각 피크를 .alpha., .betha., .gamma. 및 .delta.라 할 때 활성화에너지는 각각 0.35-0.48, 0.62-0.99, 0.48 및 0.33-0.41[eV]이었고, 각 피크 중 .gamma.는 공핍층에 형성된 도너준위, .alpha. 및 .delta.는 결정립 계면준위, .betha.피크는 도너이온에 의한 것으로 추정된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.861-864
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.