• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.216.2-216.2
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• 2010

본 연구에서는 $H_2+CO_2$(40%) 혼합기체로부터 이산화탄소를 효과적으로 분리/회수 하기 위하여 가스 하이드레이트 형성법을 제안하였다. 하이드레이트의 형성 조건을 보다 완화시켜 주기 위하여 열역학적 촉진제로서 TBAB (Tetra-n-butyl Ammonium Bromide, $(C_4H_9)_4NBr$))와 THF(Tetrahydrofuran)를 각각 첨가하여 열역학적 촉진 현상을 살펴보았다. 다양한 농도의 TBAB(10, 40, 60 wt%)와 THF(1, 5.56, 10 mol%)에 대하여 3상(H - Lw - V) 평형을 측정하였다. 그 결과 40 wt%의 TBAB와 5.56 mol%의 THF의 농도에서 가장 큰 촉진효과를 보였으며 그 이상의 농도에서는 오히려 촉진효과가 줄어드는 것을 확인할 수 있었다. 이러한 결과는 혼합가스 하이드레이트 형성시 양론비 이상의 TBAB와 THF가 첨가될 경우 반응에 참여하지 못한 TBAB와 THF가 가스 하이드레이트 형성을 방해하기 때문이다. 열역학적 촉진제로서 실제공정에 적용할 경우 40 wt%의 TBAB와 5.56 mol%의 THF를 사용하는 것이 가장 효과적일 것으로 사료된다. 본 실험에서 얻어진 결과는 가스 하이드레이트 형성법을 이용한 합성가스 분리 공정 개발에 중요한 기초 자료가 될 것이다.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.61-65
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• 2010

Ultrathin atomic layer deposition (ALD) coatings were found to enhance the performance of lithium-ion batteries (LIBs). Previous studies have demonstrated that $LiCoO_2$ cathode powders coated with metal oxides with thicknesses of $\sim100-1000{\AA}$ grown using wet chemical techniques improved LIB performance. In this study, $LiCoO_2$ powders were coated with conformal $Al_2O_3$ ALD films with thicknesses of only $\sim3-4{\AA}$ established using 2 ALD cycles. The coated $LiCoO_2$ powders exhibited a capacity retention of 89% after 120 charge-discharge cycles in the 3.3~4.5 V (vs. $Li/Li^+$) range. In contrast, the bare $LiCoO_2$ powders displayed only a 45% capacity retention. This dramatic improvement may result from the ultrathin $Al_2O_3$ ALD film acting to minimize Co dissolution or to reduce surface electrolyte reactions.

• Journal of Technologic Dentistry
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• v.34 no.2
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• pp.67-73
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• 2012

연구 목적: 임플란트의 하부구조를 상부 구조와 연결하는 레진시멘트의 접착강도를 높이기 위한 기계적 화학적인 표면처리 방법들이 연구 되고 있다. 이 연구에서 다양한 크기의 $Al_2O_3$ sandblasting과 Silano Pen으로 표면처리한 티타늄과 레진 시멘트의 접착강도를 알아보고자 한다. 연구 방법: 12개의 티타늄(Ti-6A1-4V)시편을 디스크 형태로 제작하여 자가중합 수지에 매립하였다. 이들을 각각 6개의 군으로 나누어 $50{\mu}m$, $90{\mu}m$, $110{\mu}m$ 등 3가지 크기의 $Al_2O_3$로 sandblasting 하는 조건과 $Al_2O_3$로 sandblasting한 후 Silano Pen(Bredent, bredent GmbH &Co.KG, Senden, Germany)을 사용한 군으로 나누었다. 표면처리 한 티타늄 표면에 레진시멘트(Duolink dual syringe, Bisco, USA)으로 접착하였다. 그 후 증류수($37^{\circ}C$)에 24시간 보관 후 접착강도 실험을 시행하였고, SEM을 사용하여 표면처리 한 표면과 접착강도 실험 후 파절양상을 관찰하였다. 결과: 통계학적 분석에 따르면 Silano Pen을 사용하여 표면처리한 군들의 접착강도가 높았다(P<0.05). 결론: Silano Pen을 사용하는 것이 티타늄과 레진시멘트의 접착강도를 증가 시킨다.

• Journal of the Korean earth science society
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• v.30 no.5
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• pp.588-597
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• 2009

Measurements of atmospheric $CO_2$ were made in the mountainous region of Srinagar-Garhwal, India (January to December 2006). Concentrations of $CO_2$ averaged $393\pm4.9$ ppm in 2006. Daily variations of $CO_2$ values showed minimum during the daytime (376.2 ppm) and peaked in the morning/evening (410.1 ppm). At monthly intervals, the $CO_2$ values varied from $367\pm11.14$ (May) to $425.2\pm13.54$ ppm (March). If divided on a seasonal basis, the values declined to minimum amounts in post-monsoon ($389.9\pm9.0$ ppm) and reached maximums during winter ($397.1\pm11.6$ ppm). Although phenology is significant in controlling $CO_2$ levels, short-term changes cannot be explained without the anthropogenic perturbations (e.g., vehicular pollution and forest fires). The $CO_2$ concentrations in Srinagar-Garhwal (393.4 ppm) were generally higher than those of other major monitoring locations around the world.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.33-38
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• 2014

In this work, according to temperature and time of hydrothermal synthesis, the electrochemical properties of $TiO_2$ particle using TTIP based on changing temperature and time in the hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis temperature and time were $200^{\circ}C$ and 1 h, respectively. The fabricated DSSC delivered the best electrochemical properties. In that case, $TiO_2$ particle size was 13.08 nm, electron transport time was $2.34{\times}10^{-3}s$ and recombination time was $4.01{\times}10^{-2}s$. The lowest impedance of $13.52{\Omega}$ and Voc, Jsc, FF is 0.70 V, $1.50mAcm^{-2}$, 65.62%, respectively and corresponding efficiency of 5.34% was considered as the optimal.

• Journal of Magnetics
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• v.19 no.2
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• pp.121-125
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• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• Journal of the Korean Chemical Society
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• v.62 no.6
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• pp.427-432
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• 2018

The reaction of [$[Ni(L)]Cl_2{\cdot}2H_2O$ (L = 3,14-dimethyl-2,6,13,17-tetraazatricyclo[$14,4,0^{1.18},0^{7.12}$]docosane) with 1,1-cyclohexanediacetic acid ($H_2cda$) yields mononuclear nickel(II) complex, [$Ni(L)(Hcda^-)_2$] (1). This complex has been characterized by X-ray crystallography, electronic absorption, cyclic voltammetry and thermogravimetric analyzer. The crystal structure of 1 exhibits a distorted octahedral geometry with four nitrogen atoms of the macrocycle and two 1,1-cyclohexanediacetate ligands. It crystallizes in the triclinic system P-1 with a = 11.3918(7), b = 12.6196(8), $c=12.8700(8){\AA}$, $V=1579.9(2){\AA}^3$, Z = 2. Electronic spectrum of 1 also reveals a high-spin octahedral environment. Cyclic voltammetry of 1 undergoes one wave of a one-electron transfer corresponding to $Ni^{II}/Ni^{III}$ process. TGA curve for 1 shows three-step weight loss. The electronic spectra, electrochemical and TGA behavior of the complex are significantly affected by the nature of the axial $Hcda^-$ ligand.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.192-192
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여co-sputtering 방법으로 성장시킨 고이동도를 갖는Ge-doped $In_2O_3$In2O3 (IGO) 박막의 전기적, 광학적, 구조적 특성을 평가하고, 이를 유기태양전지와 유기발광다이오드에 적용함으로써 고이동도 IGO 투명전극의 소자 적용가능성을 타진하였다. GeO2 타겟에 인가되는 도핑 Power와 급속열처리 온도가 30 W, $500^{\circ}C$일 때, 최적화 된 IGO 박막으로부터 $2.8{\times}10^{-4}$ Ohm-cm의 낮은 비저항과 86.9% (550 nm)의 높은 투과도를 확보하였다. 뿐만 아니라 Near Infra-red (750~1,200 nm) 영역에서의 IGO투명전극의 광투과율이 결정질의 ITO보다 높은(약15%) 투과도를 보이는 것을 통해 IGO박막의 높은 LAS (Lewis Acid Strength) 값을 가지는 Ge 원소의 도핑이 NIR 영역의 광투과율 향상에 미치는 영향을 확인할 수 있었다. 최적 조건의 IGO 박막을 적용하여 Fill Factor 67.38%, Short circuit current density 8.43 mA/cm2, open circuit voltage 0.60 V, efficiency 3.44%의 유기태양전지 및 19.24%의 외부양자효율을 갖는 유기발광다이오드를 제작함으로써 결정질 ITO 전극(20.05%)을 대체할 수 있는 고투과, 고이동도 IGO 투명 전극 및 이를 이용한 광전소자 적용 가능성을 타진하였다.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.184-189
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• 2004

The effects of $Y_2$ $O_3$-substitution on the piezoelectric properties of Pb[(N $i_{1}$3/N $b_{2}$3/)$_{0.15}$(Z $r_{1}$2/ $Ti_{1}$2/)$_{0.85}$] $O_3$ceramics were investigated. It was found that $Y^{3+}$ ions incorporate into Pb-sites of the ceramics, resulting in a increased lattice anisotropy and formation of Pb-vacancies. As a result, an orthorhombic-tetragonal phase transition was induced when $\chi$>0.005. At the morphotropic phase boundary of x=0.005, piezoelectric constants( $k_{p}$, $k_{33}$, and $d_{33}$) showed maximum values of 0.53, 0.58, and 350pC/N, respectively. A 30-layer actuator fabricated with the above material showed a maximum strain of 0.12％ under 100V DC bias.