• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.10
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• pp.78-84
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• 2010

This paper describes the safety assessment of power cable splices connecting different sized 6/10[kV] class power cables. To assess the safety, AC withstand voltage tests, partial discharge tests and impulse tests were carried out to the cable splice specimens and thermal rise due to overload and cross section of joint were examined as well. As a result, a breakdown due to the $4.5[U_0](27[kV_{ac}])$ application could not found for 5 minutes. Under $1.73[U_0](10.4[kV_{ac}])$ application, partial discharges of 4~8[pC] were detected. In impulse tests, all the specimens withstood to the standard waveforms of $75[kV_{peak}](1.2{\times}50[{\mu}s])$ without any breakdowns. In addition, the temperature on the splice rose by $3[^{\circ}C]$ when the 200[A] flew through the splice for 20minutes, however the thermal rise of $3[^{\circ}C]$ was considered due to the atmospheric temperature. After all the electrical tests, the cross section of the splice was visually examined. The conditions of the conductors of both $185[mm^2]$ and $240[mm^2]$ were good.

• Phonetics and Speech Sciences
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• v.10 no.4
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• pp.39-44
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• 2018

This study aimed to examine whether preconsonantal vowel shortening, which occurs in many languages, exists in Chinese. To this end, we compared 15 pairs of Chinese bi-syllabic words with intervocalic unaspirated/aspirated stops. The results revealed that (1) the effect of the feature aspiration of the following stop on the preceding vowel (V1) was neither significant nor consistent though V1 tends to be a little longer before an unaspirated stop; (2) the following unaspirated stop closure (C) was similar to or longer than its aspirated cognate; (3) the durational sum of V1 and C was longer when the stop is unaspirated, and V1 and C had no compensatory relationship; (4) Voice Onset Time (VOT) was significantly longer when the stop is aspirated than unaspirated; (5) the vowel (V2) following VOT was significantly longer when the stop is unaspirated, so the differentials in VOT were partially compensated; (6) despite the partial compensation, the sum of VOT and V2 was longer when the stop is aspirated; (7) words with an intervocalic aspirated stop were longer than those with its unaspirated cognate. It is concluded that while VOT is the most important factor for deciding the timing structure of Chinese words with intervocalic stops, closure duration is crucial for Korean and many other languages.

• Journal of Environmental Health Sciences
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• v.29 no.2
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• pp.94-102
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• 2003

This study was carried out to investigated the distribution and characteristics of Vibrio spp. isolated from fish and shellfish, seawater and brackish water samples collected from Pohang, Uljin, Yeongduk and Gyeongju in Gyeongbuk Province from April 2000 to October 2000. Total 155 strains of genus Vibrio were isolated from 439 collected samples, and numbers of isolated strains of V. parahaemolyticus and V. vulnificus were 140 and 15, respectively. The isolation rate from the samples collected in Pohang was the highest as 41.5% (76 strains), and wat the highest as 71.4% (30 strains) in brackish water, and was the highest as 55.7% (34 strains) in August. And the optimal pH, temperature, and NaCl concentration for growth of V. parahaemolyticus and V. cholerae were 8.0, 3$0^{\circ}C$ and 2.0％, respectively. In a resistance test for environmental factors, heat and cold resistants of V. parahaemolyticus were higher than those of V. vulnificus, withstanding for 15 minutes at 6$0^{\circ}C$ and 6 days at -18$^{\circ}C$. The pH range for existence of V. parahaemolyticus and V. vulnificus were 4.5~l1.0 and 4.5~10.0, showing the similar resistance to pH. V. parahaemolyticus and V. vulnificus could grow in media containing up to 10.0% and 7.0% NaCl, respectively, Salt-tolerance of V. parahaemolyticus was higher than that of V. vulnificus. In an antibiotics sensitivity test against 16 strains of V. parahaemolyticus, twelve strains were resistant to ampicillin, eight strains were resistant to cephalothin. one strain was resistant to streptomycin, and one strain was resistant to ticarcillin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• Journal of Surface Science and Engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.534-542
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• 2003

Small electric motors in an automobile perform various tasks such as engine cooling, pumping, HVAC etc. At present, most of them are DC motors supplied by 12V or 24V batteries. However, DC motors suffer from low efficiency, life cycles and reliability. Therefore, there is a growing interest in substituting DC motors for advanced at motors including switched reluctance motors(SRM). Although there are several other forms SRM convertors, they are either unsatisfactory to the control performance or unsuitable for the 12V battery source. Especially, a conventional asymmetric converter of SRM provides the best flexible and effective control to the current waveform of SRM, but it has the most switches and produces conducting voltage drops across two power switches during SRM operation. For automotive applications with a 12V battery source, this circuit is inadequate. For considering the requirement for effective operation and simple structure of converter in the limited internal circumstance of automobiles, the author inclines toward selecting Modified C-dump converter and Energy efficient c-dump converter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.304-310
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• 2002

Novel charge trap type memory devices with reoxidized oxynitride gate dielectrics made by NO annealing and reoxidation process of initial oxide on substrate have been fabricated using 0.35 $\mu \textrm{m}$ retrograde twin well CMOS process. The feasibility for application as NVSM memory device and characteristics of traps have been investigated. For the fabrication of gate dielectric, initial oxide layer was grown by wet oxidation at $800^{\circ}C$ and it was reoxidized by wet oxidation at $800^{\circ}C$ after NO annealing to form the nitride layer for charge trap region for 30 minutes at $850^{\circ}C$. The programming conditions are possible in 11 V, 500 $\mu \textrm{s}$ for program and -13 V, 1ms for erase operation. The maximum memory window is 2.28 V. The retention is over 20 years in program state and about 28 hours in erase state, and the endurance is over $3 \times 10^3$P/E cycles. The lateral distributions of interface trap density and memory trap density have been determined by the single junction charge pumping technique. The maximum interface trap density and memory trap density are $4.5 \times 10^{10} \textrm{cm}^2$ and $3.7\times 10^{18}/\textrm{cm}^3$ respectively. After $10^3$ P/E cycles, interlace trap density increases to $2.3\times 10^{12} \textrm{cm}^2$ but memory charges decreases.

• Environmental Engineering Research
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• v.10 no.1
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• pp.31-37
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• 2005

The selective catalytic experiments using both sulfated/sulfur-free titania and V2O5/TiO2 catalysts have been conducted for NO reduction by NH3 in a packed-bed, down-flow reactor. The sulfated and vanadia loaded titania exhibited higher activity for NO removal than the sulfur-free catalysts, where > 90% NO removal was achieved over the sulfated V2O5/TiO2 catalyst between 280∼500 C. The surface structure of vanadia species on the catalyst surface played a critical role in the high performance of catalysts in which the existence of monomeric/polymeric vanadate is revealed by Raman spectra studies. Water vapor and SO2 were added to the reacting system for the catalyst deactivation tests. At higher temperatures (T ≥ 350 C), little deactivation was observed over the sulfated V2O5/TiO2 catalysts, showing good durability against SO2 and water vapor, which is compared with deactivation at lower temperatures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.53-56
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• 2008

In this investigation, results of laboratory tests on six reinforce concrete flat plate interior connections with elongated rectangular column support which has been used widely in tall residential buildings are presented. The purpose of this study is to evaluate an effect of column aspect ratio(${\beta}$c=$c_1/c_2$) on the hysteretic behavior under earthquake type loading. The aspect ratio of column section was taken as 0.33${\sim}$3($c_1/c_2$=1/3, 1/1, 3/1). Other design parameters such as flexural reinforcement ratio of slab and concrete strength was kept constant as ${\rho}$=1.0%, 1.5% and $f){ck}$=40MPa, respectively. Gravity shear load($V_g$) was applied by 30 percents of nominal vertical shear strength(0.3$V_o$) of the specimen. Experimental observations on punching failure pattern, peak lateral-load and story drift ratio at punching failure, and stiffness degradation were achieved and discussed in accordance with different column aspect ratio.