• Journal of Powder Materials
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• v.4 no.2
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• pp.113-121
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• 1997

The densification of the compacts of Co+32%Cr+20%W+l.5%C, Co+32%Cr+20%W+3.0%C and Co+32%Cr+20%W+4.5%C sintered under $H_2$ gas or vacuum was investigated. The effect of V and B addition on the densification was also investigated. The densification of these compacts were always incomplete regardless of sintering atmosphere, temperature and time. The amounts of oxygen and carbon in compacts sintered in $H_2$ for 3.6ks at 1523K were 0.105~0.160 mass% and 0.33~0.89 mass%, respectively. And those in vacuum were 0.028~0.032% and 0.957~4.08%, respectively. Relative density(Ds) of Co+29%Cr+17%W+3.0%C compact containing 6%V and Co+32%Cr+20%W+2.97%C compact containing 0.03%B were 99 and 100%, respectively, indicating complete densification by solid phase sintering. Victors hardness of sintered compacts containing 6%V or 0.03%B were 632 and 568, showing 50~60% increase in comparison to those without V or B. These results can be explained in terms of oxidation/reduction of oxides and equilibrium pressure of CO in isolated pore, instead of presence of liquid formation and grain boundary separation from pores due to large grain growth.

• Journal of IKEEE
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• v.28 no.1
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• pp.46-52
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• 2024

In this study, we investigated the electrical characteristics of SiC MOSFETs by depositing Si and oxidizing it to form the gate oxide layer. A thin Si layer was deposited approximately 20 nm thick on top of the SiC epi layer, followed by oxidation to form a gate oxide layer of around 55 nm. We compared devices with gate oxide layers produced by oxidizing SiC in terms of interface trap density, on-resistance, and field-effect mobility. The fabricated devices achieved improved interface trap density (~8.18 × 10¹¹ eV^-1cm^-2), field-effect mobility (27.7 cm²/V·s), and on-resistance (12.9 mΩ·cm²).

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.9
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• pp.3138-3151
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• 2022

Traffic safety and congestion are becoming more and more serious, especially the frequent occurrence of traffic accidents, which have caused great casualties and economic losses. Cellular Vehicle to Everything (C-V2X) can assist in safe driving and improve traffic efficiency through real-time information sharing and communication between vehicles. All vehicles communicate directly with Base Stations (BS), which will increase the base station load. And when the communicating vehicles are too far apart, too fast or there are obstacles in the communication path, the communication link can be unstable or even interrupted. Therefore, choosing an effective and reliable multi-hop relay-assisted Vehicle to Vehicle (V2V) communication can not only reduce the base station load and improve the system throughput but also expand the base station coverage and improve the communication quality of edge vehicles. Therefore, a communication area division scheme based on regular hexagon segmentation technology is proposed, a relay-assisted V2V communication mechanism is designed for the divided communication areas, and an efficient communication link is constructed by selecting the best relay node. Simulation results show that the scheme can improve the throughput of the system by nearly 55% and enhance the robustness of the V2V communication link.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.1
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• pp.39-45
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• 2009

Statement of problem: Recently precalcification treatment has been studied to shorten the period of the implant. Purpose: This study was performed to evaluate the effect of precalcification treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy. Material and methods: Specimens of $20{\times}10{\times}2\;mm$ in dimensions were polished sequentially from #220 to #1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. The nanotubular layer was processed by electrochemical anodic oxidation in electrolytes containing 0.5 M $Na_2SO_4$ and 1.0 wt% NaF. Anodization was carried out using a regulated DC power supply (Kwangduck FA, Korea) at a potential of 20 V and current density of $30\;㎃/cm_2$ for 2 hours. Specimens were heat-treated at $600^{\circ}C$ for 2 hours to crystallize the amorphous $TiO_2$ nanotubes, and precalcified by soaking in $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. To evaluate the bioactivity of the precalcified $TiO_2$ nanotube layer, hydroxyapatite formation was investigated in a Hanks' balanced salts solution with pH 7.4 at $36.5^{\circ}C$ for 2 weeks. Results: Vertically oriented amorphous $TiO_2$ nanotubes of diameters 48.0 - 65.0 ㎚ were fabricated by anodizing treatment at 20 V for 2 hours in an 0.5 M $Na_2SO_4$ and 1.0 NaF solution. $TiO_2$ nanotubes were composed with strong anatase peak with presence of rutile peak after heat treatment at $600^{\circ}C$. The surface reactivity of $TiO_2$ nanotubes in SBF solution was enhanced by precalcification treatment in 0.5 M $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. The immersion in Hank's solution for 2 weeks showed that the intensity of $TiO_2$ rutile peak increased but the surface reactivity decreased by heat treatment at $600^{\circ}C$. Conclusion: This study shows that the precalcified treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy enhances the surface reactivity.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.585-588
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• 1996

여러 가지 Zr합금에서 생성되는 석출물의 특성을 규명하기 위하여 시편을 $600^{\circ}C$에서 1시간 동안 열처리 한후 EDX가 부착된 TEM을 이용하여 석출물에 관한 연구를 수행하였다. Zr1.4Sn0.2Fe0.1Cr 합금에서는 두 종류의 석출물이 생성되는데 하나는 석출물의 대부분을 차지하는 HCP 구조으 Zr(Cr, Fe)2 석출물로서 이는 둥근 형태를 유지하며 결정립내나 결정립계에 관계없이 널리 분산되어 분포된다. 다른 하나의 석출물은 극히 일부에서만 관찰되는 Zr2(Fe, Si)성분의 석출물로서 이는 tetragonal 구조를 갖는다. Zr0.5Nb0.6Fe0.3V 합금에서는 tetragonal (Zr, Nb)2(Fe, V) 석출물이 형성되며, Nb이 1.0 wt.% 첨가된 Zr1.0Nb0.6Fe0.3V 합금에서는 HCP 구조의 (Zr, Nb)(Fe, V)2 석출물과 BCC 구조인 $\beta$-Zr이 생성된다. Zr1.0Nb0.6Fe0.3V합금을 제외하고는 대부분의 합금에서 석출물은 약 1.0$\mu\textrm{m}$의 크기를 나타냈다. 합금 조성이 다를 경우에 석출물 크기와 35$0^{\circ}C$ 부식 특성과는 부식 특성과는 연관성이 없는 것로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• Korean Journal of Agricultural Science
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• v.25 no.2
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• pp.225-234
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• 1998

This study was compared the degree of consolidation by Hyperbolic, Curve fitting, Asaoka's, Monden's methods using measured value with theoretical curve in consideration of smear effect and well resistance. The results of the study were summarized as follows ; 1. The degree of consolidation by Hyperbolic method was underestimated than the degree of consolidation by Curve fitting, Asaoka's, and Monden's methods. 2. Typical range of horizontal coefficient of consolidation was $C_h=(2{\sim}3)C_v$ in the case considering smear effect and well resistance, and $C_h=(0.5{\sim}2.5)C_v$ in the case disregarding smear effect and well resistance. 3. The degree of consolidation obtained by ground settlement monitoring was nearly same value when the coefficient of permeability of smear zone by back analysis was shown the half that of in-situ and the diameter of smear zone was shown double that of mendrel. 4. Increasing of diameter reduction ratio of drain, the time of consoildation was delayed. The affection of well resistance the case of small coefficient of permeability was much more than that in the case of large coefficient of permeability. It was recommended that design of diameter reduction of drain consider smear effect and well resistance.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Bulletin of the Korean Chemical Society
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• v.31 no.5
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• pp.1267-1269
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• 2010

The pure crystalline $Li_{1.1}V_{0.9}O_2$ powder has been prepared by a simple solid state reaction of $Li_2CO_3$ and $V_2O_3$ precursors under nitrogen gas containing 10 mol % hydrogen gas flow. The structure of $Li_{1.1}V_{0.9}O_2$ powder was analyzed using Xray diffraction (XRD) and scanning electron microscope (SEM). The stoichiometric $Li_{1.1}V_{0.9}O_2$ powder was used as anode active material for lithium secondary batteries. Its electrochemical properties were investigated by cyclic voltammetry and constant current methods using lithium foil electrode. The observed specific discharge capacity and charge capacity were 360 mAh/g and 260 mAh/g during the first cycle, respectively. In addition, the cyclic efficiency of this cell was 72.2% in the first cycle. The specific capacity of $Li_{1.1}V_{0.9}O_2$ anode rapidly declines as the current rate increases and retains only 30 % of the capacity of 0.1C rate at 1C rate. The crystallinity of the $Li_{1.1}V_{0.9}O_2$ anode decrease as discharge reaction proceeds. However, the relative intensity of main peaks was almost recovered when the cell was charged up to 1.5 V.

• Journal of Auto-vehicle Safety Association
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• v.13 no.1
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• pp.26-30
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• 2021

K-city is an experimental area for developing self-driving cars. V2X communications such as WAVE, C-V2X and 5G are an essential technology for autonomous driving above level 4. In this paper, the research on the V2V communication environment was carried out through BSM receiving level analysis on the driving route in K-city. A stationary vehicle communicated with a test vehicle moving along urban area and suburban road in two different scenarios. The communication range and receiving levels obtained from this study will be used to develop and verify various safety scenarios using V2V communication within K-city in the future.