• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.11a
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• pp.131-135
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• 2003

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.303-306
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• 2011

[ $V_2O_5$ ]doped Karrooite pigments were synthesized by the solid state method to get stabilized brown pigment in oxidation and reduction atmosphere. Optimum substitution condition and limited dopant with $V_2O_5$ for Karrooite pigment was investigated. With calcination at $1250^{\circ}C{\sim}1400^{\circ}C$, compositions were designed varying $V_2O_5$ molar ratio by increasing 0.02mole to the formula $Mg_1-xTi_2-xM_{2x}O_5$(x = 0.01~0.09 mole). Synthesized pigments were analyzed by XRD, Raman spectroscopy and UV-vis. When $V_2O_5$ was doped from 0.01 to 0.05 mole, single phase of Karrooite was observed at temperature $1300^{\circ}C$ and soaking time 4h by Raman spectroscopy. However, it was found that excess $VO_2$ peak appeared with 0.07 and 0.09 mole of $V_2O_5$ doped to $MgTi_2O_5$. This result indicated that the maximum limit of solid solution is 0.05 mole $V_2O_5$. Karrooite pigments were applied as a ceramic pigment to achieve brown colors in lime magnesia glaze and lime barium graze at both of oxidation and reduction atmosphere. CIE color coordinates are $L^*$ = 40.34, $a^*$ = 9.94, $b^*$ = 21.40 in lime magnesia glaze.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.28 no.1
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• pp.15-22
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• 1995

To study ecological properties of Vibrio cholerae non-Ol and Vibrio mimicus which have been described as new food poisoning bacteria recently, the influence of factors such as temperature, salinity, pH and chemical oxygen demand (COD) on detection rate and density of these bacteria were evaluated. Fifty four seawater samples and 49 bottom deposit samples from estuary of Kum river from March 26th, 1993 to February 22nd, 1994 were used for this study. The detection rate of V cholerae non-O1 were $16.7\%$ for seawater and $10.2\%$ for bottom deposit, respertively. The total detertion rate of V. cholerae non-O1 $(11.7\%)$ was a little higher than V mimicus $(10.7\%)$. Both V choierae non-O1 and V. mimicus were mainly detected in estuary water of which showed temperature $24^{\circ}C$ above and salinity $10\%o$ below. These bacteria were also detected in bottom deposit on January when the water temperature was $3.5^{\circ}C$. From these results, we supposed that temperature, salinity and organic material were important factors to growth of V. cholerae non-O1 and V. mimicus. V cholerae non-O1 might be grown better than V. mimicus under the fluctuating aquatic environmental condition such as salinity.

• Journal of applied mathematics & informatics
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• v.29 no.1_2
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• pp.351-367
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• 2011

In this article, we construct exact traveling wave solutions for nonlinear PDEs in mathematical physics via the (1+1)- dimensional combined Korteweg- de Vries and modified Korteweg- de Vries (KdV-mKdV) equation, the (1+1)- dimensional compouned Korteweg- de Vries Burgers (KdVB) equation, the (2+1)- dimensional cubic Klien- Gordon (cKG) equation, the Generalized Zakharov- Kuznetsov- Bonjanmin- Bona Mahony (GZK-BBM) equation and the modified Korteweg- de Vries - Zakharov- Kuznetsov (mKdV-ZK) equation, by using the (($\frac{G'}{G}$) -expansion method combined with the Riccati equation, where G = $G({\xi})$ satisfies the Riccati equation $G'({\xi})=A+BG^2$ and A, B are arbitrary constants.

• Korean Journal of Food Science and Technology
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• v.5 no.2
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• pp.129-135
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• 1973

The accumulation of peroxides, acid values, and carbonyl values during irradiation and post-irradiation storage of the ricebran oil has been studied. The rice bran oils were irradiated two doses of 2 and 7 megarads (300 rads/sec) at $23^{\circ}C$ atmospheric circumstance. The acid values, peroxide values and carbonyl values were measured at regular intervals of one week during the storage at $5^{\circ}C$ and $25^{\circ}C$. 1) During the storage, the acid values of the irradiated rice bran oils increased or decreased insignificantly regardless of the addition of antioxidants and storage temperature. 2) The peroxide values were not increased continuously but increased zigzag. The result was indicated that the composition and decomposition of peroxides occurred continuously throughout the storage. 3) As the peroxide values increased, carbonyl values decreased and changed quite differently, but, especially in 7th week, they were constant or insignificant. 4) Dibutylhydroxytoluene is more effective than caffeic acid in retarding the formation of peroxides during irradiation of rice bran oils and post-irradiation storage. The effect of antioxidant is more efficient at 2 megarads than at 7 megarads irradiation. When we store the rice bran oil, the addition of antioxidants of post-irradiation is more desirable than that of preirradiation. 5) In spite of changing conditions such as storage temperature and addition of antioxidants, the peroxide values of rice bran oils irradiated at 2 megarads were always greater than those at 7 megarads during the storage. Peroxide values of samples at high temperature $(25^{\circ}C)$ storage increased as twice as those of low temperature $(5^{\circ}C)$ storage samples. At low temperature, peroxide values in the first week increased twice during the period of 8th weeks storage, but those did from three to four times at higher temperature in the same period Therefore, the low temperature storage is recommandable too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.191-191
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• 2007

유효 산화막 두께가 약 2.0nm 정도의 $ZrO_2$ 절연막 위에 Ta-Mo 금속 합금과 Ru-Zr 금속 합금을 Co-sputtering 방법을 이용하여 여러 가지 일함수를 갖는 MOS capacitor를 제작하여 전기적 재료적 특성에 관하여 연구를 하였다. 그 결과 각각의 금속 합금 게이트는 4.1eV 에서 5.1eV 사이의 다양한 일함수를 나타냈으며, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ RTA 후의 C-V특성 곡선 및 I-V 측정을 통하여 누설전류를 확인하였다. 그 결과 Ta-Mo 금속 합금의 경우 스퍼터링 파워가 100W/70W에서 NMOS에 적합한 일함수를 가졌으며, Ru-Zr 금속 합금의 경우 스퍼터링 파워가 50W/100W에서 NMOS에 적합한 일함수를 가졌다. 열처리 후의 C-V특성 곡선에서도 정전용랑 값이 거의 변하지 않았으며 평탄 전압의 변화도 거의 없었다. 누설전류 특성에서는 물리적 두께가 비슷한 기존의 $SiO_2$ 절연막에서 실험결과와 비교하여 약 100배 정도 감소되었음을 알 수 있었다. 또한 기존의 실험들에서 나타난 열처리 후의 $ZrO_2$ 절연막과 Si 기판 사이의 Interfacial layer 의 동반 두께 증가로 인한 전기적 특성 저하가 나타나지 않는 줄은 특성을 보여준다.

• The KIPS Transactions:PartC
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• v.18C no.4
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• pp.207-212
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• 2011

Vehicular Ad Hoc Network(VANET) is a communication technology between vehicles and vehicles(V2V) or vehicles and infrastructures(V2I) for offering a number of practical applications. Considering the importance of communicated information through VANET, data authentication, confidentiality and integrity are fundamental security elements. Recently, to enhance a security of VANET in various circumstances, message authentication is widely researched by many laboratories. Among of them, Zhang. et. al. is an efficient method to authenticate the message with condition of anonymity in dense space. In the scheme, to obtain the vehicular ID with condition of anonymity, the k-anonymity is used. However it has a disadvantage, which conducts hash operations in case of determining the vehicular ID. In the paper, we present a location based algorithm using received signal strength for the location based authentication and encryption technique as well, and to enhance the accuracy of algorithm we apply a location determination technique over the 3-dimensional space.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.406-408
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• 1999

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.