Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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C-V Characteristics of Oxidized Porous Silicon

다공성 실리콘 산화막의 C-V 특성

  • 김석 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과)
  • Published : 1996.05.01
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Abstract

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

전류밀도, 70mA/cm2와 전류인가시간, 5초, 10초 조건의 양극반응으로 다공성 실리콘을 제작하여 800~110$0^{\circ}C$에서 열산화시킨 후 AI 전극을 증착시켜 만든 MOS(Metal Oxide Semiconductor) 구조의 C-V(Capacilance-Voltage) 특성을 조사하였다. 800, 90$0^{\circ}C$의 저온과 20~30분 이내의 단시간 산화에서는 산화막의 유전상수가 보통의 열산화막보다 크게 나타나고, 산화온도가 110$0^{\circ}C$의 고온과 60분 이상의 장시간 산화의 경우에는 3.9에 근접한 값을 갖는다. 이는 다공성 실리콘 산화막내에 존재하는 산화되지 않은 silicon들에 의한 효과와 표면적 증가에 의한 정전용량의 증가 효과가 복합적으로 작용하는 것이 그 원인이라 생각된다.

Keywords

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