• Title/Summary/Keyword: V-t Characteristic

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Optimal Pressure Condition and V-t Characteristic of Macro Interface between Epoxy and EPDM (Epoxy/EPDM 거시계면의 최적조건과 V-t 특성)

  • 박우현;이동규;이상극;안준호;김충혁;이기식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.439-442
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    • 2002
  • The interface between two different materials in the insulation systems is the weak-link in the underground power transmission systems, In this paper, Optimum conditions of the interface between Epoxy and EPDM is studied. The variation factor condition of interface is roughness of surface, spreading of oils, interfacial pressure and temperature. The breakdown times under the constant voltage below the breakdown voltage were also gained. The breakdown voltage at the after laying time equivalent to is calculated by the V-t characteristic and the inverse power law. When this is done, the characteristic life exponent n is used and the long time breakdown voltage can be evaluated.

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Electrical Properties about Thermal and Water Degradation of Epoxy Powder for Bus Duct (부스닥트용 에폭시 분체도료의 열 및 수중열화에 대한 전기적 특성)

  • Kim, Hyun-Hee;Kim, Sang-Hyun
    • Fire Science and Engineering
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    • v.23 no.3
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    • pp.17-22
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    • 2009
  • Epoxy powder is being in use for insulation materials widely. Especially, in cause of coating insulation can be caused electrical fire and explosion by Joul's heat. This study has been compared and examined around breakdown, arc discharge, and V-t about insulation of Epoxy powder. Also, it has been researched about insulation which is cause of electrical fire and its basic data. According to temperature change, sample KS was stable before the Tg to be about $8{\sim}10%$ decrease in the breakdown test. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical characteristic, sample KS has excellent capacity.

Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology

  • Joung, Bong-Kyu;Kang, Jeong-Won;Hwang, Ho-Jung;Kim, Sang-Yong;Kwon, Oh-Keun
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.1
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    • pp.1-6
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    • 2006
  • Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

DOUBLE PAIRWISE (r, s)(u, v)-SEMICONTINUOUS MAPPINGS

  • Lee, Eun Pyo;Lee, Seung On
    • Journal of the Chungcheong Mathematical Society
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    • v.27 no.4
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    • pp.603-614
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    • 2014
  • We introduce the concepts of ($\mathcal{T}^{{\mu}{\gamma}}$, $\mathcal{U}^{{\mu}{\gamma}}$)-double (r, s) (u, v)-semiclosures and ($\mathcal{T}^{{\mu}{\gamma}}$, $\mathcal{U}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-semiinteriors. Using the notions, we investigate some of characteristic properties of double pairwise (r, s)(u, v)-semicontinuous, double pairwise (r, s)(u, v)-semiopen and double pairwise (r, s)(u, v)-semiclosed mappings.

Physiological roles of N-acetylglucosaminyltransferase V (GnT-V) in mice

  • Miyoshi, Eiji;Terao, Mika;Kamada, Yoshihiro
    • BMB Reports
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    • v.45 no.10
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    • pp.554-559
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    • 2012
  • Oligosaccharide modification by N-acetylglucosaminyltransferase-V (GnT-V), a glycosyltransferase encoded by the Mgat5 gene that catalyzes the formation of ${\beta}1$,6GlcNAc (N-acetylglucosamine) branches on N-glycans, is thought to be associated with cancer growth and metastasis. Overexpression of GnT-V in cancer cells enhances the signaling of growth factors such as epidermal growth factor by increasing galectin-3 binding to polylactosamine structures on receptor N-glycans. In contrast, GnT-V deficient mice are born healthy and lack ${\beta}1$,6GlcNAc branches on N-glycans, but develop immunological disorders due to T-cell dysfunction at 12-20 months of age. We have developed Mgat5 transgenic (Tg) mice (GnT-V Tg mice) using a ${\beta}$-actin promoter and found characteristic phenotypes in skin, liver, and T cells in the mice. Although the GnT-V Tg mice do not develop spontaneous cancers in any organs, there are differences in the response to external stimuli between wild-type and GnT-V Tg mice. These changes are similar to those seen in cancer progression but are unexpected in some aspects. In this review, we summarize what is known about GnT-V functions in skin and liver cells as a means to understand the physiological roles of GnT-V in mice.

DOUBLE PAIRWISE (r, s)(u, v)-PRECONTINUOUS MAPPINGS

  • Lee, Eun Pyo;Lee, Seung On
    • Journal of the Chungcheong Mathematical Society
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    • v.30 no.1
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    • pp.1-13
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    • 2017
  • We introduce the concepts of (${\mathcal{T}}^{{\mu}{\gamma}},{\mathcal{U}}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-preclosures and (${\mathcal{T}}^{{\mu}{\gamma}},{\mathcal{U}}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-preinteriors. Using the notions, we investigate some of characteristic properties of double pairwise (r, s)(u, v)-precontinuous mappings.

A Study on the Electrical and Mechanical Properties of a Epoxy Powder for Compact Bus Duct (콤팩트 부스덕트용 에폭시분체도료의 전기적.기계적 특성연구)

  • Kim, Sang-Hyun;Choi, Jin-Wook;Kim, Dong-Wook;Kim, Hyun-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.3
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    • pp.210-217
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    • 2009
  • Insulated methods of compact bus duct has been applied a way of coating Epoxy powder. The problem which is caused by degradation during operation is very important in severe environment. Therefore, this study compared and verified many kind of properties ; electrical breakdown by thermal and water aging, v-t characteristic, arc discharge, mechanical properties, bending test and cross cut. Sample D was stable before the $T_g$ to be about $7{\sim}10 %$ decrease in the breakdown test according to temperature change. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical and mechanical characteristic, both sample D and A have excellent capacity.

A Study on the AC Interfacial Breakdown Properties of the Interface between Epoxy/EPDM with Variation of the Spread Oil (도포된 오일의 변화에 따른 Epoxy/EPDM 계면의 교류 절연파괴 특성에 관한 연구)

  • Bae, Deok-Gwon;Jeong, Il-Hyeong;O, Jae-Han;Park, U-Hyeon;Lee, Gi-Sik;Kim, Chung-Hyeok;Lee, Jun-Ung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.8
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    • pp.445-450
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    • 2000
  • Many successful developments and microscopic studies have been made on the high quality insulating materials. However, a little attention have given to the macroscopic interface in HV(High Voltage) insulating systems. In this study, AC interfacial breakdown strength and V-t characteristic of the interface between Epoxy/EPDM(ethylene propylene diene terpolymer) are investigated. Electrode system is designed to reduce the charges from electrodes and to have the tangential potentials along the interface between Epoxy/EPDM by FEM(finite elements method). The AC breakdown strength is observed when HV is given to the interface. It is shown that AC interfacial breakdown strength is improved by increasing interfacial pressure and oiling. In particular, it was saturated at certain interfacial pressure level. V-t characteristic is able to extend to the life time of the interface between Epoxy/EPDM. Oiling also plays a good roll in prolongation of the life time.

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MAGFET Hybrid IC with Frequency Output (주파수 출력을 갖는 MAGFET Hybrid IC)

  • Kim, Si-Hon;Lee, Cheol-Woo;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.194-199
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    • 1997
  • When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

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V-t Characteristics in $SF_6-N_2$ Mixtures for Transient Impulse Voltages ($SF_6-N_2$ 혼합가스에서 과도임펄스전압에 대한 V-t특성)

  • Lee, Bok-Hui;Lee, Gyeong-Ok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.9
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    • pp.456-465
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    • 2001
  • In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.

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