• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.542-549
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• 2016

This paper presents a SoC (System-on-a-Chip) dedicated for a single-chip smart capsule which can be used to continuously monitor human alimentary canal pH and temperature values. The SoC is composed of the pH and temperature sensor interface circuit, a wireless transceiver, the power management circuit and the flow control logic. Fabricated in $0.18{\mu}m$ standard CMOS technology, the SoC occupies a die area of ${\sim}9 mm^2$. The SoC consumes 6.15 mW from a 3 V power supply, guaranteeing the smart capsule battery life is no less than 24 hours when using 50 mAh coin batteries. The experimental results show that measurement accuracy of the smart capsule is ${\pm}0.1$ pH and ${\pm}0.2^{\circ}C$ for pH and temperature sensing, respectively, which meets the requirement of in-body pH and temperature monitoring in clinical practice.

• 한국ITS학회 논문지
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• 제17권4호
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• pp.138-149
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• 2018

본 논문은 전력선 통신의 성능을 하락시키는 임펄스 잡음을 효과적으로 완화하는 시스템 모델을 제안한다. 최근 딥 러닝이 다양한 분야에 적용되어 효과적인 성능개선을 보이고 있다. 효과적인 임펄스 잡음 완화를 위해 딥 러닝 알고리즘 중 하나인 컨볼루션 뉴럴 네트워크를 기존의 시스템에 적용한다. 또한 다수의 사용자가 존재할 경우를 고려하여 연속적 간섭 제거 기법을 사용하여 다수의 사용자로부터 발생하는 임펄스 잡음을 완화시킨다. 제안한 시스템 모델을 전력선 통신에 적용하여 시뮬레이션을 하였고 비트 오류 확률 대 SNR 그래프를 통해 제안한 시스템 모델의 성능을 확인한다. 또한, 연속적 간섭 제거 기법 중 ZF와 MMSE 연속적 간섭 제거 기법, 최적의 순서를 가지는 연속적 간섭 제거 기법과 최적의 순서를 가지지 않는 연속적 간섭 제거 기법을 각각 비교하여 어떠한 기법이 더 우수한 성능을 가지는지를 확인한다.

• 한국수소및신에너지학회논문집
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• 제18권4호
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• pp.452-457
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• 2007

Titanium foil and mesh(anodized tubular $TiO_2$ electrode, ATTE) were anodized in a bath at $5^{\circ}C$ with 20V external bias applied, then annealed at different temperatures($450^{\circ}C{\sim}850^{\circ}C$) to obtain tubular $TiO_2$ on the Ti substrate. The prepared sample was used to investigate rate of hydrogen production as well as Cr(VI) reduction. The ATTEs annealed at relatively lower temperatures showed higher activity than those at relatively higher temperatures. In particular, the Cr(VI) reduction was pH-dependent. To improve photocatalytic Cr(VI) reduction with the ATTEs, two configurations, fixing foil type and rotating mesh type, were also compared. As a result, the rotating mesh type was much more effective for Cr(VI) reaction than the former due to the more efficient use of the light. In the rotating type reactor, as the rotating speed increased, the rate of the Cr(VI) reduction was getting faster.

• 천문학회보
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• 제39권2호
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• pp.57.2-57.2
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• 2014

Red active galactic nuclei (AGNs) are supposed to be transitional objects becoming normal AGNs in the galaxy evolution scenario. So far, ~200 red AGNs have been found by very red color in optical through NIR wavelength (e.g., r'-K >5 and J-K>1.3; Urrutia et al. 2009). Here, we compare nuclear activities of the red AGNs to those of normal AGNs to verify the evolutionary phase of the red AGNs. In order to study the nuclear activities of the red AGNs, we use broad emission lines of $P{\beta}$ ($1.28{\mu}m$) of which flux is less suppressed by a factor of 100 than the $H{\beta}$ line in the case of the red AGNs with a color excess of E(B-V)=2 mag. We use 16 red AGNs discovered in previous red AGN surveys by using SDSS, 2MASS, and FIRST (Glikman et al. 2007; Urrutia et al. 2009) at z ~0.7 for which $P{\beta}$ lines are redshifted to the sky window at ${\sim}2.2{\mu}m$. The mean Eddington ratio of the 16 red AGNs is 0.562, and that of the normal AGNs is 0.320, which indicates the red AGNs include more active black hole (BH) than the normal AGNs. To test how significantly the nuclear activities of the red AGNs and the normal AGNs are different, we perform a two-dimensional Kolmogorov-Smirnov test (K-S test) on their Eddington ratio distributions. The K-S test shows the maximum deviation between the cumulative distributions, D, is 0.48, and the probability of null hypothesis, p, is even less than 0.001. This result is consistent with a picture of that the red AGNs are in intermediate phase between the stage of merger-driven starburst galaxy and the normal AGN.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2008년도 추계 학술발표회 제20권2호
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• pp.61-64
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• 2008

콘크리트충전 강관기둥(Concrete Filled steel Tube Column)과 RC 무량판 슬래브의 조합은 거푸집을 사용하지 않는다는 것만으로도 초고층 건물의 공기단축에 상당한 영향을 미칠 수 있다. 뿐만 아니라 기둥의 내력 증진으로 인한 기둥 크기의 축소, 그로 인한 공간 활용도의 증가, 층간 소음문제 해결 등 많은 장점이 잠재되어 있다. 하지만 접합부의 성능을 정확히 밝혀내는 것이 우선 이루어져야 하며, 본 논문에서는 기존에 수행된 CFT 기둥-RC 무량판 슬래브의 내부접합부에 대한 중력 실험과 횡하중 실험을 바탕으로 외부접합부에 대한 실물대 실험을 수행하였다. 외부접합부 실험 결과, 내부접합부 실험체에 비하여 동일한 조건에서 설계된 외부접합부 실험체는 최대 모멘트강도가 $50%{\sim}65%$ 감소하였고, 내진밴드가 추가된 CFT-E2 실험체는 BME 실험체에 비하여 20%의 최대모멘트 증진과 탁월한 연성능력, 에너지 흡수능력을 보유한 것으로 나타났다. 또한 CFT-E2는 내진밴드의 사용으로 슬래브의 휨거동 영역이 확장되었으며 모든 실험체가 설계기준에서 요구하는 0.4V$_c$중력하중 하에서 1.5% 횡변 위비를 만족하였다.

• Journal of Information Display
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• 제7권4호
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• pp.21-23
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• 2006

We developed a 4.5" 192${\times}$64 active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is 800${\mu}m$ and lO${\mu}m$ respectively and the driving OTFT has 1200${\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5$ $cm^2$/V·sec, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.257-257
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• 2010

최근 저항 변화 메모리는 종래의 비휘발성 기억소자인 Flash memory보다 access time(writing)이 105배 이상 빠르고, DRAM과 같이 2~5 V 이하의 낮은 전압 특성 및 간단한 제조 공정 등으로 차세대 비휘발성 메모리 소자로 주목 받고 있지만, 여전히 소자의 Endurance 및 Retention 특성 등의 신뢰성 문제를 해결해야 할 과제로 안고 있다. 이러한 문제점들을 해결하기 위해 페로브스카이트계 산화물 또는 이원 산화물 등의 다양한 저항 변화 물질에 대한 연구가 진행되고 있다. 하지만, 현재 주로 연구되고 있는 금속 산화물계 물질들은 그 제조 공정상 산소에 의한 다수의 산소 디펙트 형성과 제작 시 쉽게 발생할 수 있는 표면 오염의 문제점을 안고 있다. 본 연구는 기존의 금속 산화물계 박막의 제조 공정에서 발생하는 문제점을 해결하기 위해 질화물계 박막을 저항변화 물질로 도입함으로써, 기존의 저항 변화 물질의 장점인 간단한 공정 및 저전압/고속 동작 특성을 동일하게 유지 할 뿐 아니라, 그 제조 공정상 발생하는 다수의 산소 디펙트와 표면 오염의 문제를 해결함으로써, 보다 고효율을 가지며 재현성이 우수한 메모리 소자를 구현 하고자 한다 [1, 2]. 본 연구를 위해 Pt/AlN/Pt 구조의 Metal/Insulator/Metal(MIM) 저항 변화 메모리를 제작 하였다. 최적의 저항 변화 특성 조건을 확인하기 위해 70~200nm까지 두께 구분과 N2 가스 분위기의 열처리 온도를 $200{\sim}600^{\circ}C$까지 진행 하였다. 본 소자의 저항 변화 특성 실험은 Keithley 4200-SCS을 이용하여 진행 하였다. 실험 결과, AlN의 최적의 두께 및 열처리 온도 조건은 130nm/$500^{\circ}C$였으며, 안정적인 unipolar 저항 변화 특성을 확인 활 수 있었다.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 구강회복응용과학지
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• 제21권1호
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• pp.33-42
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• 2005

This study was performed to investigate the surface properties and in vitro biocompatibility of electrochemically oxidized Ti-6Al-7Nb alloy by anodic spark discharge technique. Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed using a regulated DC power supply. The applied voltages were given at 240, 280, 320, and 360 V and current density of $30mA/cm^2$. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. Samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ during 30 days. The results obtained were summarized as follows; 1. The oxide films were porous with pore size of $1{\sim}5{\mu}m$. The size of micropores increased with increasing the spark forming voltage. 2. The main crystal structure of the anodic oxide film was anatase type as analyzed with thin-film X-ray diffractometery. 3. Needle-like hydroxyapatite (HA) crystals were observed on anodic oxide films after hydrothermal treatment at $300^{\circ}C$ for 2 hours. The precipitation of HA crystals was accelerated with increasing the spark forming voltage. 4. The precipitation of the fine asperity-like HA crystals were observed after being immersed in Hanks' solution at $37^{\circ}C$. The precipitation of HA crystals was accelerated with increasing the spark forming voltage and the time of immersion in Hanks' solution. 5. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal as increasing the spark forming voltage and the time of immersion in Hanks' solution.