Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Re-oxidation on the Electrical Properties of Mutilayered PTC Thermistors

적층 PTC 써미스터의 전기적 특성에 대한 재산화의 영향

  • Chun, Myoung-Pyo (Nano IT Materials Team, Korea Institute of Ceramic Engineering and Technology)
  • 전명표 (한국세라믹기술원 나노IT소재팀)
  • Received : 2012.12.05
  • Accepted : 2013.01.04
  • Published : 2013.02.01
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Abstract

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

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References

  1. H. Ihrig, J. Am. Ceram. Soc., 64, 617 (1981). https://doi.org/10.1111/j.1151-2916.1981.tb10228.x
  2. T. Matsuoka, Y. Matsuo, H. Sasaki, and S. Hayakawa, J. Am. Ceram. Soc., 55, 108 (1972). https://doi.org/10.1111/j.1151-2916.1972.tb11223.x
  3. A. Yamada and Y. M. Chiang, J. Am. Ceram. Soc., 78, 909 (1995). https://doi.org/10.1111/j.1151-2916.1995.tb08413.x
  4. M. H. Lin and H. Y. Lu, Mater. Sci. Eng., A335, 101 (2002).
  5. S. Tashiro, A. Kanda, and H. Igarashi, Jpn. J. Ceram. Soc., 102, 284 (1994). https://doi.org/10.2109/jcersj.102.284
  6. A. Kanda, S. Tashiro, and H. Igarashi, Jpn. J. Appl. Phys., 33, 5431 (1994). https://doi.org/10.1143/JJAP.33.5431
  7. C. C. Lin, W. C. J. Wei, C. Y. Su, and C. H. Hsueh, J. Alloys Comp., 485, 653 (2009). https://doi.org/10.1016/j.jallcom.2009.06.050
  8. J. Wei, Y. Pu, Y. Mao, and J. Wang, J. Am. Ceram. Soc., 93, 1527 (2010).
  9. F. Liu and Y. Qu, J. Phys. Chem. Sol., 68, 41 (2007). https://doi.org/10.1016/j.jpcs.2006.09.004
  10. K. H. Yoon, H. S. Park, S. O. Yoon, and H. I. Song, J. Mat. Sci. Lett., 8, 1442 (1989). https://doi.org/10.1007/BF00720217
  11. R. E. Melnick and G. T. R. Palmore, J. Phys. Chem., B105, 9449 (2001).