• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.442-450
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• 1999

In this paper, we have fabricated Langmuir-Blodgett(LB) films by LB technique and evaluated the deposited status of LB films by UV-vis absorbance. It was found thatthe thickness of LB films per a layer are $27~30[{\AA}]$ by ellipsometry. The responeses between LB films and organic gases were investigated using by I-V characteristics of LB films and F-R diagram of quartz crystal. The response orders between LB films and organic gases observed by I-V characteristics were as following ; chloroform, methanol, acetone and ethanol in the order of their short chain length. The response mechanism between LB films and organic gases observed by F-R diagram of quartz crystal could be modeled on adsorption at surface, penetration, desorption at surface and inside.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 전기설비전문위원
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• pp.177-179
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• 2009

Solar, as an ideal renewable energy, it has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current varies with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.136-141
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• 2023

The continuous shrinking of transistors in integrated circuits leads to difficulties in improving performance, resulting in the emerging transistors such as nanosheet field-effect transistors. In this paper, we propose a TCAD-machine learning framework of nanosheet FETs to model the current-voltage characteristics. Sentaurus TCAD simulations of nanosheet FETs are performed to obtain a large amount of device data. A machine learning model of I-V characteristics is trained using the multi-layer perceptron from these TCAD data. The weights and biases obtained from multi-layer perceptron are implemented in a PSPICE netlist to verify the accuracy of I-V and the DC transfer characteristics of a CMOS inverter. It is found that the proposed machine learning model is applicable to the prediction of nanosheet field-effect transistors device and circuit performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1568-1570
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• 2003

We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.

• 대한전자공학회논문지SD
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• 제48권9호
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• pp.1-5
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• 2011

본 논문에서는 AlGaN/GaN HEMT의 DC 및 RF 특성을 최적화 하기위해서 2차원 소자 시뮬레이터를 이용하여 연구를 진행하였다. 먼저, AlGaN층의 두께, Al mole fraction 의 변화에 따른 2차원 전자가스 채널의 농도변화가 생기는 현상을 바탕으로 DC특성을 분석하였다. 다음 게이트, 소스, 드레인 전극의 크기와 위치 변화에 따른 RF 특성을 분석하였다. 그 결과 Al mole fraction이 0.2몰에서 0.45몰로 증가할수록 전달이득(transconductance, $g_m$) 과 I-V 특성이 향상됨을 확인하였다. 한편 AlGaN층의 두께가 10nm에서 50nm로 증가할수록 I-V특성은 향상되지만 $g_m$은 감소하는것을 확인하였다. RF 특성에서는 게이트 길이가 가장 큰 영향을 미치며 그 길이가 짧을수록 RF특성이 향상되는 것을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 춘계종합학술대회
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• pp.411-414
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• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.63-64
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• 2006

Recently, researches for high-speed optical devices have been increased to provide mass data transmission and high-speed optical communication. Optical modulator in the transmission link is one of the crucial devices in total optical network system and it can affect a great effect to the whole transmission properties. In this paper, traveling wave electro-absorption modulator (TWEAM) is examined to ensure high efficiency in the RF range and wide bandwidth. In addition, the temperature-dependence electrical characteristics of TWEAM is investigated. Temperature dependent property variations were characterized using I-V and C-V measurement.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.163-164
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• 2002

We have measured the I-V characteristics and contact resistance of jointed BSSCO tape in the superconducting state. Electrical joint was made by various type of solder. Estimated critical current was about 30 Amp, and the contact resistance of the joint was about 350 nOhm.

• 전력전자학회논문지
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• 제14권5호
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• pp.372-378
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• 2009

태양광 발전시스템의 설치 용량이 증가함에 따라 시스템 효율을 개선하기 위한 연구가 활발히 진행되고 있다. 고성능 시스템의 설계 및 시험을 위해서는 태양전지의 모델링을 바탕으로 태양전지의 물리적 특성에 관해 정확히 이해하는 것이 중요하다. 그러나 태양전지의 모델은 다수의 파라미터가 얽힌 비선형 형태이며, 모델식의 파라미터 값을 얻기 위한 기존의 방식에서는 오차를 동반하는 실제와 다른 가정을 전제로 하므로 결과적으로 추출된 파라미터의 정확도가 저하되게 되는 단점이 있다. 따라서 본 논문에서는 제조사가 표준상태에서 측정하여 공개하는 태양전지의 I-V 커브로부터 다이오드의 이상계수와 역포화 전류를 구하고 이로부터 저항 성분이 없는 이상적인 태양전지의 I-V 커브를 도출한 뒤, 실측된 I-V 커브와 차이를 최소화하는 직·병렬 저항값을 추출하는 새로운 방식을 제안한다. 기존의 방식과 제안된 방식의 모델링을 통하여 얻은 파라미터를 이용해 구현한 I-V 커브와 실측 I-V 커브와의 상관관계를 최소자승법을 통해 계산함으로써 제안된 방법의 유용함을 증명하였다.