Current-Voltage(I-V) Characteristics of ITO/PTFE/Al device with a variation of PTFE thickness

ITO/PTFE/Al 소자에서 PTFE 박막의 두께에 따른 전압-전류(I-V) 특성

We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.