• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.328-334
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• 2024

The activation method of metallic foils is an important technique to measure the flux and energy of proton beams. In this paper, the method was used to measure the CSNS APEP proton flux at seven nominal proton energies ranging from 10 MeV to 70 MeV for beam spot sizes of the 20 mm × 20 mm and 50 mm × 50 mm. The reactions of ^natTi(p, x)⁴⁸V, ^natNi(p, x)⁵⁷Ni, ^natCu(p, x)⁵⁸Co, and ²⁷Al(p, x)²⁴Na were employed to measure the proton beam flux with a range of 10⁷-10⁹ p/cm²/s. Furthermore, we also proposed a method using the activity ratio with a stacked-foil target to determine the energy spread of a Gaussian-like distribution for different nominal proton energies. The optimal combinations of Al, Cu, Ti, Ni, Mo, Fe, Nb, and In foils were adopted for the proton energies. The measured energy spreads for degraded beams of 30 MeV-70 MeV were found to be smaller than 10.00%.

• Journal of Wind Energy
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• v.15 no.2
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• pp.5-9
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• 2024

This paper describes the insulation breakdown characteristics of 72.5 kV dry-air insulated switchgear under development for installation in a wind power generator when a lightning impulse voltage is applied. For this study, the weak point of insulation due to the electric field concentration of the switchgear's internal shape was identified by finite element method (FEM) analysis, and the shape was actually simulated to measure and analyze the polarity of the lightning impulse voltage and the insulation breakdown characteristics according to the gas pressure at dry-air pressures of 0.1 Mpa to 0.45 Mpa. This study derives the maximum electric field with a 50 % discharge probability for each switchgear internal insulation vulnerable point based on the actual test and electrical simulation, which will be useful as reference data for supplementing and changing insulation design in the future.

• Nuclear Engineering and Technology
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• v.56 no.9
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• pp.3796-3803
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• 2024

By employing the melt-quenching technique, the ZnO-SrO-B₂O₃-PbO (ZSBP) glasses have been successfully fabricated. The derivative of Absorption Spectra Fitting (DASF) method was used to study the energy band gap (E_g) of the glasses which decreases from 3.57 eV to 3.39 eV. The structural properties have been studied using the Raman spectroscopy. The glass transition temperature (T_g) decreases with increase in concentration of the lead oxide. The current study examines the radiation shielding properties at 30.80-444 keV. The addition of PbO to the glasses resulted in a proportionate increase in the mass attenuation coefficient (MAC), suggesting a diminishing tendency in radiation transmission. At 30.80 keV, the MAC values are extremely high and range from 18.06 to 21.11 cm²/g. As density rises, the half value layer (HVL) decreases. In addition, the average HVL (${\overline{HVL}}$) decreases. The glass thickness required to reduce the radiation intensity to 90 %, 50 %, 25 %, and 10 % of its initial value is investigated at an energy of 35.80 keV. The T90 %, T50 %, T25 %, and T10 % values are 0.0020, 0.0132, 0.0264, and 0.0439 cm, respectively. The results suggest that a greater thickness of the radiation barrier is necessary to attain the necessary degree of attenuation.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• JOURNAL OF ELECTRICAL WORLD
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• s.286
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• pp.50-57
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• 2000

• Nuclear industry
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• no.9_10 s.9
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• pp.50-59
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• 1982

• Geotechnical Engineering
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• v.17 no.3
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• pp.50-61
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• 2001

• JOURNAL OF ELECTRICAL WORLD
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• s.282
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• pp.27-35
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• 2000

• Journal of Korea Fishing Vessel Association
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• v.36
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• pp.50-55
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• 1988

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.91-97
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• 2013

In this paper, a current steering 10-bit CMOS D/A converter to drive a NTSC/PAL analog TV is proposed. The proposed D/A converter has a 50MS/s operating speed with a 6+4 segmented type. Further, in order to minimize the device mismatch, a self-calibration bias technique with a fully integrated termination resistance is discussed. The chip has been fabricated with a 3.3V 0.11um 1-poly 6-metal CMOS technology. The effective chip area is $0.35mm^2$ and power consumption is about 88mW. The experimental result of SFDR is 63.1dB, when the input frequency is 1MHz at the 50MHz of sampling frequency.