• The Journal of Korean Society for Radiation Therapy
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• v.8 no.1
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• pp.109-114
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• 1996

PURPOSE : To investigate the effect of asymmetric jaws for delivering a uniform accurate dose of radiation to the junctions. METHODS & MATERIALS : A linear accelerator with a set of asymmetric jaws(varian 600C, 2100C, 2100CD with 4mev, 10mev, 10mev). Dose disribution was measured at the junctions with films in phantom. Total $10{\times}20cm^2$ with each $10{\times}10cm^2$ in deviation of ${\pm}1mm$ jaws. RESULTS : Film dosimetry showed the accuracy of asymmetric jaws depending on the machine. CONCLUSION : Understanding the mechanical characteristics of the use of half-beam at the junctions, without hot or cold regions.

• Nuclear Engineering and Technology
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• v.27 no.6
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• pp.811-824
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• 1995

The CANDU element bowing is attributed to actions of both the thermally induced bending moments and the bending moment due to hydraulic drag and mechanical loads, where the bowing is defined as the lateral deflection of an element from the axial centerline. This paper consider only the thermally-induced bending moments which are generated both within the sheath and the fuel and sheath by an asymmetric temperature distribution with respect to the axis of an element The generalized and explicit analytical formula for the thermally-induced bending is presented in con-sideration of 1) bending of an empty tube treated by neglecting the fuel/sheath mechanical interaction and 2) fuel/sheath interaction due to the pellet and sheath temperature variations, where in each case the temperature asymmetries in sheath are modelled to be caused by the combined effects of (i) non-uniform coolant temperature due to imperfect coolant mixing, (ii) variable sheath/coolant heat transfer coefficient, (iii) asymmetric heat generation due to neutron flux gradients across an element and so as to inclusively cover the uniform temperature distributions within the fuel and sheath with respect to the axial centerline. As the results of the sensitivity calculations of the element bowing with the variations of the parameters in the formula, it is found that the element bowing is greatly affected relatively with the variations or changes of element length, sheath inside diameter, average coolant temperature and its variation factor, pellet/sheath mechanical interaction factor, neutron flux depression factor, pellet thermal expansion coefficient, pellet/sheath heat transfer coefficient in comparison with those of other parameters such as sheath thickness, film heat transfer coefficient, sheath thermal expansion coefficient and sheath and pellet thermal conductivities.

• Journal of Life Science
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• v.32 no.3
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• pp.232-240
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• 2022

Various methods are known for preparing liposomes, the simplest being the Bangham method which has been widely used. Although it is possible to produce liposomes effectively on a small experimental level with this approach, large-scale production cannot be easily performed due to difficulties in removing the organic solvent and the size of the reactor required to form the lipid film. On the other hand, emulsion can mass produce tons of liposomes with uniform particles but has the disadvantage of a significantly low capture rate. This study therefore developed an optimal liposome processing method using heat with improved capture rate and stability, and bio-absorption experiments were performed by oral administration to SD rat alongside capture rate, particle size, and zeta potential. Through the heating method, a small and uniform liposome of about 214 nm was formed and the capture rate was 38.67%, confirming that the liposome prepared by heating has a higher capture rate than the 26.46% achieved through emulsion. Comparing blood concentrations, it showed a 1.5 to 2 fold increase in all groups, gradually decreasing until 4-12 hr. The highest blood concentration of ascorbic acid powder was about 12.017 ㎍/ml, the emulsion liposome 13.871 ㎍/ml, and the heating liposome 16.322 ㎍/ml, thereby showing an improved absorption rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.24 no.2
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• pp.279-290
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• 1994

The purpose of this study was to compare the diagnostic accuracy of periapical radiographs and their digitized images for the detection of simulated interproximal carious lesions. A total of 240 interproximal surfaces was used in this study. The case sample was composed of 80 anterior teeth, 80 bicuspids and 80 molars which were prepared in order to distribute the surfaces from carious free to those containing simulated carious lesions of varying depths (0.5㎜, 0.8㎜, and 1.2㎜). The periapical radiographs were taken by paralleling technique and film used was Kodak Ektaspeed(E group). All radiographs were evaluated by five dentist to recognize the true status of simulated carious lesion. They were asked to give a score of 0, 1, 2, or 3. Digitized images were obtained using a commercial video processor(FOTOVIX Ⅱ- XS). And the computer system was 486 DX PC with PC Vision and frame grabber. The 17' display monitor had a resolution of 1280×1024 pixels(0.26㎜ dot pitch). But the one frame of the intraoral radiograph has a resolution of 700×480 pixels and each pixel has a grey level value of 256. All the radiographs and digital images were viewed under uniform subdued lighting in the same reading room. After a week the second interpretation was performed in the same condition. The detection of lesions on the monitor was compared with the finding of simulated interproximal carious lesions on the film images. The results were as follows: 1. When the scoring criteria was dichotomous ; lesion present and not present 1) The overall sensitivity, specificity and diagnostic accuracy of periapical radiographs and their digital images showed no statistically significant difference. 2) The sensitivity and specificity according to the region of teeth and the grade of lesions showed no statistically significant difference between periapical radiographs and their digital images. 2. When estimate the grade of lesions ; score 0, 1, 2, 3 1) The overall diagnostic accuracy was 53.3% on the intraoral films and 52.9% on digital images. There was no significant difference. 2) The diagnostic accuracy according to the region of teeth showed no statistically significant difference between periapical radiographs and their digital images. 3. The degree of agreement and reliability 1) Using gamma value to show the degree of agreement, there was similarity between periapical films and digital images. 2) The reliability of each twice interpretation of periapical films and digital images showed no statistically significant difference. In all cases P value was greater than 0.05, showing that both techniques can be used to detect the incipient and moderate interproximal carious lesions with similar accuracy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.649-656
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• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.513-519
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• 1998

Zr-Si binary alloys containing 0.01 to O.lwt.%Si were prepared to investigate the effect of Si on the corrosion behavior of Zr. Corrosion test was performed in pure water at 36$0^{\circ}C$ under a pressure of 2660psi for 100days. The alloys containing 0.01 wt. % and 0.05wt. %Si had the black and uniform oxide film and didn't show the transition of corrosion rate. However. the alloys containing O.lwt.%Si had white oxide film and showed the trasition of corrosion rate at 70 days corrosion test. The weight gain increased with the increasing Si content from 0.01 to 0.1 wt.%. The variation of Si contents had no effect on changing the oxide structure but had significant effect on the electrical resistivity of oxide. The electrical resistivity decreased with increasing Si content. The fraction of precipitates in the Zr-Si binary alloys. identified as tetragonal $Zr_{3}$Si increased with increasing Si content. The increase of the volume fraction of precipitates is thought to be responsible for the increase of weight gain due to short circuit effect of precipitate.