• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.107-107
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.13.1-13.1
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.7-8
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.415-419
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• 2014

나노스케일 MOSFET에서 leakage current는 중요한 이슈로서 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current에 어떤 영향을 미칠 것인지 시뮬레이션을 통하여 알아보았다. $Si_{1-x}Ge_x$ alloy에서 Ge의 비율이 증가할수록 유효질량이 작아졌으나 conduction band minimum의 위치는 Si에 비해 상승하였다. 이로 인해 tunneling 확률이 증가하여 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current를 더욱 증가시키게 되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.139-145
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• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

• 대한방사선기술학회지:방사선기술과학
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• 제18권1호
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• pp.97-110
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• 1995

This study was undertaken to investigate ultrastructural changes according to the radiosensitivity in the spermatogenic cells and Sertoli cell of the seminiferous tubules in Korean native pheasants. During spermatogenetic period, testes were collected from male adult Korean native pheasant and they were used as experimental and control birds. The experimental group was divided into a single-dose whole body irradiation group (400, 600, 800 and 1,000 rads) and a split-dose whole body irradiation groups(400/2, 600/2, 800/2 and 1,000/2 rads). The experimental birds were sacrificed at 24 and 72 hrs after irradiation and the control pheasants were sacrificed at the same time. Ultrastructural changes of Sertoli cells and spermatogonia were investigated by ultrathin section with electron microscope. The results obtained are summarized as follows; 1. The apoptosis was observed after 72 hrs group of the single-dose irradiation of 400 rads. 2. The cytoplasmic organelles of spermatogonia were severely damaged more than that of sertoli cell in 72 hours group of split-dose irradiation of 800 rads. 3. The cytoplasmic organelles of Sertoli cell were severely damaged except the nuclear membrane of Sertoli cells in 72 hrs group of split-dose irradiation of 1,000 rads.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.121.2-121.2
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• 2014

Synthesis of catecholamine from aniline is achieved by plasma enhanced CVD process. Catecholamine has a variety of functions in body such as brain and bloodstream controls. Catecholamine also has an interesting property of a material independent ability of functionalizing surface, which is found at mussels' adhesive nature. Synthesis of catecholamine has only been available from DOPA by chemical reduction and oxidation. This study presents the direct synthesis of catecholamine from further elemental source, aniline, which has not been achieved by a conventional chemical method. The process also indicates that a variety of catecholamine can be formed by controlling reactant gases. In additional to PECVD's very useful properties such as conformal, ultrathin and uniform coatings, a direct synthesis from aniline and a capability of controlling formation of a variety catecholamine is believed to open up a numerous applications.

• 한국식물병리학회지
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• 제3권3호
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• pp.223-235
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• 1987

황색 모자이크 괴저조반, 위축, 기형, colour breaking의 병미을 나타내고 있는 나리류를 한국의 남부지역에서 채집하였다. 전자현미경에 의해 2종의 바이러스 입자가 분리되어, 이들의 기주범위, 혈청반응, 조즙액중의 부활화 한계, 진딧물의 전반성, 감염엽세포에 있어서 바이러스 입자의 소재양식에 의하여 2종의 바이러스를 동정하였다. Broad bean wilt virus(BBWV) : 이 바이러스는 즙액접종에 의해 8과 23종의 검정식물에 감염이 확인되었다. 복숭아혹진딧물에 의해 쉽게 전반되었다. 내열성은 $70\%$, 내희석성은 1,000배, 내보존성은 6일이였다. 바이러스 입자의 형태는 직경 약 28nm의 소구형이다. 혈청시험에서 본 바이러스는 BBWV의 항혈청과 특이적인 반응대를 형성했다. 병엽절편의 전자현미경적관찰에서는 엽육세포의 세포질, 액포, 핵내에서 바이러스 입자의 응집괴 및 결정배열상이 확인되엇고, 특히 세포질내에서는 vesicular body의 발달이 확인되었다. Cncumber mosaic virus(CMV) : 이 바이러스 입자의 형태는 직경 약30nm의 소구형이다. 본 바이러스 CMV-Y의 항혈청과 특이적인 반응대를 형성했다. 감염엽조직의 전자현미경적관찰에서는 엽육세포의 세포질 및 액포내에서 바이러스 입자의 응집괴 도는 결정배열상이 확인되었다. BBWV와 CMV를 건전한 나리류(Lilium tigrium, L. concolor, L. auratum)에 재접종한 결과 BBWV의 접종주에서는 가벼운 병징 또는 colour breaking를 나타내었고, CMV의 접종수에서는 황색 모자이크 또는 괴저조반을 나타냈다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.