Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Hole Mobility Enhancement in (100)- and (110)-surfaces of Ultrathin-Body Silicon-on-Insulator Metal-Oxide-Semiconductors

Ultrathin-Body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가

  • Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ) ;
  • Koo, Sang-Mo (Department of Electronic materials engineering, Kwangwoon Univ) ;
  • Chung, Hong-Bay (Department of Electronic materials engineering, Kwangwoon Univ) ;
  • Jung, Jong-Wan (Dept. of Nano-Sci. & Tech, Sejong Univ.) ;
  • Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ)
  • 김관수 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학부) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2007.06.21
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Abstract

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

Keywords