• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.107-107
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.13.1-13.1
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.7-8
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.415-419
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• 2014

나노스케일 MOSFET에서 leakage current는 중요한 이슈로서 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current에 어떤 영향을 미칠 것인지 시뮬레이션을 통하여 알아보았다. $Si_{1-x}Ge_x$ alloy에서 Ge의 비율이 증가할수록 유효질량이 작아졌으나 conduction band minimum의 위치는 Si에 비해 상승하였다. 이로 인해 tunneling 확률이 증가하여 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current를 더욱 증가시키게 되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.139-145
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• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

• Journal of radiological science and technology
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• v.18 no.1
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• pp.97-110
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• 1995

This study was undertaken to investigate ultrastructural changes according to the radiosensitivity in the spermatogenic cells and Sertoli cell of the seminiferous tubules in Korean native pheasants. During spermatogenetic period, testes were collected from male adult Korean native pheasant and they were used as experimental and control birds. The experimental group was divided into a single-dose whole body irradiation group (400, 600, 800 and 1,000 rads) and a split-dose whole body irradiation groups(400/2, 600/2, 800/2 and 1,000/2 rads). The experimental birds were sacrificed at 24 and 72 hrs after irradiation and the control pheasants were sacrificed at the same time. Ultrastructural changes of Sertoli cells and spermatogonia were investigated by ultrathin section with electron microscope. The results obtained are summarized as follows; 1. The apoptosis was observed after 72 hrs group of the single-dose irradiation of 400 rads. 2. The cytoplasmic organelles of spermatogonia were severely damaged more than that of sertoli cell in 72 hours group of split-dose irradiation of 800 rads. 3. The cytoplasmic organelles of Sertoli cell were severely damaged except the nuclear membrane of Sertoli cells in 72 hrs group of split-dose irradiation of 1,000 rads.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.121.2-121.2
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• 2014

Synthesis of catecholamine from aniline is achieved by plasma enhanced CVD process. Catecholamine has a variety of functions in body such as brain and bloodstream controls. Catecholamine also has an interesting property of a material independent ability of functionalizing surface, which is found at mussels' adhesive nature. Synthesis of catecholamine has only been available from DOPA by chemical reduction and oxidation. This study presents the direct synthesis of catecholamine from further elemental source, aniline, which has not been achieved by a conventional chemical method. The process also indicates that a variety of catecholamine can be formed by controlling reactant gases. In additional to PECVD's very useful properties such as conformal, ultrathin and uniform coatings, a direct synthesis from aniline and a capability of controlling formation of a variety catecholamine is believed to open up a numerous applications.

• Korean Journal Plant Pathology
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• v.3 no.3
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• pp.223-235
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• 1987

Samples showing yellow mosaic symptom of Lilium spp. with necrotic fleck, stunting, malformation, and colour breaking were collected from lily-growing areas in the southern part of Korea. Two viruses were distinguished under a electron microscope and their host range, serological reaction, stability in sap, type of aphid transmission, and relations with cells and tissues were examined. Broad bean wilt virus (BBWV) was transmitted by sap-inoculation to 23 plant species in 8 families and by the aphid, Myzus persicae. This virus was inactivated after 10 min at 70C, at dilution of $10^{-3}$, and after 6 days at about 20C. Electron microscopic examination of purified preparation showed that the virus is spherical particle of 28nm in diameter. The virus reacted positively with BBWV-antiserum in agar gel diffusion test. In ultrathin sections of BBWV infected tissues, large aggregates or crystalline array of virus particles and vesicular body were found in the cytoplasm, vacuole, and nucleus of mesophyll cells. Cucumber mosaic virus (CMV) was transmitted by sap-inoculation. Electron microscopic examination of its purified preparation showed spherical particles of 30nm in diameter. The virus reacted positively with CMV-Y strain-antiserum in agar gel diffusion test. In ultrathin sections of CMV infected tissues, crystalline array of virus particles were found in the vacuole and a large number 0f virus particles were found in the cytoplasm and the plasmodesmata of mesophyll cells. When each of these viruses was retransmitted to Lilium tigrinum. L. concolor, and L. auratum, BBWV induced slight symtoms and colour breaking, but CMV induced yellowing mosaic or necrotic fleck.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.