• Proceedings of the KSR Conference
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• 2009.05a
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• pp.1454-1460
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• 2009

Ultra-speed tube train, which runs in vacuum atmosphere to overcome aero-dynamic dragging force, is considered as a high-speed ground transportation system to back up long-distance air travel. To realize the ultra-speed tube train, feasibility study of currently available Maglev technologies especially for propulsion and levitation system is needed. Propulsion by linear synchronous motor(LSM) and levitation by electro-dynamic suspension(EDS) which are utilized in the Japan's MLX system could be one of candidated technologies for ultra-speed tube train. In the LSM-EDS system, the key component is superconducting magnet, and its reliability and performance is very important to guarantee the safe-operation of Maglev. As the initiative of the feasibility study, this paper deals with the basic structure of superconducting magnet and core technologies to design and operate it. And by surveying the current R&D achievement in Korea, the nation's capability to develop advanced superconducting magnet for Maglev is presented.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.142.1-142.1
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• 2016

We present bulk diffusion rates of hydroxide ions in amorphous solid water (ASW) at 135 ~ 160 K. Previous researches showed that the diffusion mechanism of hydroxide is different from one of hydronium ions, and this implies that they have different diffusion rates. In ultra-high vacuum (UHV) chamber, low-energy scattering (LES) was used to measure ion population and temperature-programmed desorption (TPD) was conducted for measuring ASW thicknesses. To determine the diffusion rates, a simple model for $H_2O/NaOH/H_2O$ sandwich films was developed using Fick's second law. The measured surface population of hydroxide ions as a function of time was well fitted to the model, and the rates were well agreed to an Arrhenius equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.118.1-118.1
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• 2016

포항가속기연구소 PLS-II 저장링에 설치 운용을 위한 타원편광 언듈레이터(EPU114)용 초고진공 진공 챔버는 전체를 기계가공 후 용접하여 제작하는 기존의 방식을 바꾸어 알루미늄 압출 공법을 적용한 진공 챔버의 개발과 본제품 제작을 완료하였다. 압출 공법을 이용한 초고진공용 진공 챔버 제작은 기계가공 및 용접비용의 절감과 동일 형상의 진공 챔버를 상대적으로 쉽게 대량 생산을 할 수 있는 장점이 있다. 알루미늄 압출형 초고진공 진공 챔버의 기계, 진공 특성을 달성하기 위하여 정밀금형 제작기술, 특수압출기술, 표면처리기술 등이 필수적이다. 본 발표에서는 초고진공 진공 챔버 개발을 위하여 적용된 압출 공법의 소개와 함께 압출 공법이 적용된 타원편광 언듈레이터(EPU114)진공 챔버의 제작, 초고진공 진공달성, 설치 등의 과정을 내용으로 한다.

• Tribology and Lubricants
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• v.10 no.4
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• pp.69-74
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• 1994

The space world under zero gravity and super vacuum where the space machine works has only friction and inertia. Inertia of acceleration and diceleration is accurately obtained by computing while friction is always in contact surface and unsteady. The sur soundings under super vacuum make surface friction more complicate. [1,2]. Therefore, method to lubricate stably the contact surface for long term in space machine is very important and friction for space machine proves to be true by several accident of space projects. In spite of that accident, method of lubrication and lubricants to keep stablity for long term in space machine have not been established so far. Lubrication for space machine is very important and under developings over the world. In this study we suggest a new lubricating technology, which improves powerful for space machine.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.34-40
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• 1993

새로운 단결정 박막 성장방법으로 최근에 많은 관심을 끌고 있는 초고진공 화학기상증착법(Ultra-High Vacuum Chemical Vapor Deposition)을 이용하여 AlGaAs에 에피탁시 박막을 성장시켰다. AlGaAs 에피탁시층의 성장은 2。 경사진 GaAs(100) 기판을 사용하였다. 반응 기체로는 Trimethylgallium(TMGa), Trimethylaluminum(TMAl)과 arsine을 사용하였고, 성장온도는 $580~700^{\circ}C$, 기체 압력은 10-5~10-4Torr를 유지하였다. 특히 본 연구에서는 arsine을 사전에 열분해 하는 통상의 Chemical Beam Epitaxy(CBE) 성장법과는 달리, arsine이 표면에서 분해되는 화학 반응만을 사용하여도 AlGaAs 에피탁시를 성장할 수 있음은 물론 박막내의 탄소 불순물의 농도가 크게 낮아짐을 관찰하였다. 또한 성장 온도의 변화에 따른 AlGaAs 에피탁시층의 Al 함유 과정에 대하여도 고찰하였다.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.145-151
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• 1993

Ultra High Vacuum chamber for surface analysis and a series of AES-LEED controllers for LEED optics was designed and constructed. Electron energy resolution of LEED optics was tested. On the basis of the layer by layer mode, thickness of evaporated Ni on Pt(111) was calculated from the Auger signal ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.279-279
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• 2012

In order to estimate the average migration lengths of $H_3O^+$ ions in amorphous ice, we conducted experiments of reactive ion scattering (RIS), low energy sputtering (LES), and reflection absorption IR spectroscopy (RAIRS) with an ultra-high vacuum (UHV) chamber. Dopped water-ice films were grown on the clean surface of Ru single crystal and analyzed with RIS, LES and RAIRS methods. The population changes of probe molecules, which were buried at a controlled distance from the surface, were monitored by those methods so that we can mesure the migration efficiencies. From the measured efficiencies, we evaluated the average migration lengths. This result is expected to give the information about the dynamics of proton in water-ice film.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.519-523
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• 1999

Epitaxial thickness $t_e(T_s)$ of Si films grown at the substrate temperature $T_s$=80~30$0^{\circ}C$ by ultra-high vacuum ion-beam sputter deposition onto nominally-singular, [100]-miscut Si(001) was measured. $t_e(T_s)$ values of films grown on vicinal Si(001) substrates were decreases compared to those of films grown on nominally-singular Si(001). Evolution of surface roughness measured by atomic force microscopy of films grown at $300^{\circ}C$ showed that the increases step density in vicinal substrates increases the tendency toward unstable growth resulting in larger surface roughness, which in turn decreases te.