• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• 한국정밀공학회지
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• 제21권4호
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• pp.194-201
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• 2004

Optical fibers are indispensable fer optical communication systems that transmit large volumes of data at high speed. But the aligning technology under the sub-micron accuracy is required for the precise axis adjustment and connection. For the purpose of precise alignment of the optical arrays, in this research, we have developed the 12-axis(with 8 automated axis and 4 manual axis) automatic optical fiber alignment system including the image processing-based searching system, the automatic loading system using the robot and the suction toot and the automatic UV bonding system. In order to obtain the sub-micron alignment accuracy, two 4-axis PC-based motion controllers and the two 50nm resolution 6-aixs micro-stage actuated by micro stepping motors are adopted. The fiber aligning procedure consists of two steps. Firstly, the optical wave guide and an input optical array are aligned by the 6-axis input micro-stage with the IR camera. The image processing technique is introduced to reduce primary manual aligning time and result in achieving the 50% decrease of aligning time. Secondly, the IR camera is replaced by the output micro-stage and a wave guide and two optical arrays are aligned simultaneously before the laser power intensity delivered to the optical powermeter reached the threshold value. When the aligning procedure is finished, the wave guide and arrays are W bonded. The automatic loading/unloading system is also introduced and the entire wave guide handing time is reduced significantly compared to the former commercial aligning system.

• 한국안광학회지
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• 제4권2호
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• pp.97-103
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• 1999

ZnS 화합물은 근자외선 영역의 직접천이형 띠 간격을 갖으며 청색 발광 다이오드나 레이저의 소재로 기대되는 물질이다. 결정구조는 X선 회절무늬를 분석한 결과 zinc blonde구조임을 알 수 있었다. 격자상수는 $a_o=5.411{\AA}$이었다. ZnS단결정의 광학적 흡수, 광전류와 광발광 스펙트럼 등 광학적 특성을 조사하였다. 광학적 띠간격 에너지는 3.61eV이었고 $800^{\circ}C$에서 열처리한 ZnS의 띠 간격 에너지는 광전류 측정 결과 as-grown-ZnS에 비하여 0.1eV 정도 작아짐을 알 수 었었다. 광발광 스펙트럼은 30K에서 293K까지 as-grown-ZnS와 $800^{\circ}C$에서 열처리한 경우에 대하여 각각 측정되었다. As-grown ZnS단결정의 광발광 피크는 350nm, 392nm, 465nm에서 $800^{\circ}C$에서 열처리한 경우 349nm, 370nm, 394nm 518nm, 572nm에서 각각 측정되었다.

• Advances in nano research
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• 제3권3호
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• pp.123-131
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• 2015

The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at $450^{\circ}C$ with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration $6.13{\times}10^{16}cm^{-3}$ can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration $4.44{\times}10^{17}cm^{-3}$ can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

• 한국광학회지
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• 제12권3호
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• pp.219-224
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• 2001

주파수 위상 간섭계를 이용한 전기장 재구성 방법(SPIDER)을 이용하여 Kerr 렌즈 모드록킹된 티타늄 사파이어 레이저 공진기에서 생성된 펨토초 영역의 극초단 펄스의 펄스폭과 위상을 측정하였다. 8cm 길이의 SF10 매질과 마이켈슨형의 시간지연암(arm)을사용하여 주파수 층밀림(shearing)을 구현하고 제2종 BBO결정으로 합주파수 발생을 시켜 SPIDER 장치를 구성 하였다 얻어진 층밀림 주파수 간섭 신호로부터 SPIDER 알고리즘을 이용하여 펄스의 전기장을 복원하였다 SPIDER의 정확도를 확인하기 위해 SPIDER에서 얻은 펄스로 재구성한 간섭형 자체상솬신호를 직접 측정한 간섭형 자체상관 신호와 비교하였다. SPIDER를 티타늄 사파이어 레이저 공진기에 적용하여 19fs의 펄스폭을 얻었으며 sech$^2$나 가우시안으로 가정한 간섭형 자체상관의 결과는 이보다 작은 값으로 나타나서 펨토초 레이저의 정확한 펄스폭 측정을 위해서는 펄스모양의 가정이 필요없는 SPIDER 방법이 필요함을 알 수 있었다.

• 센서학회지
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• 제13권2호
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• pp.96-100
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• 2004

Optical fiber sensors have been used to detect small amounts of chemical species. In this work, a new thin polymer-clad fiber sensor is developed. Polyaniline is chemically synthesized and thin clad layers of the polymer are easily deposited on optical fiber by dip-coating technique. The optical property of polyaniline as a sensing material is analyzed by UV-Vis-NIR. The light source is stabilized He-Ne laser at 635 nm wavelength with 1 mW power. The light power transmitted through the optical fiber is measured with a spectrophotometer. By selecting a fixed incident angle, variation of transmitted light intensity through the optical fiber can be detected as gas molecules absorbed in the polyaniline clad layer. Among the various gases, the fabricated optical fiber sensor shows good sensitivity to $NH_{3}$ gas. The optical fiber sensors was shown more improved properties than polymer based sensors which measure conductivity changes.

• 한국재료학회지
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• 제11권4호
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• pp.319-323
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• 2001

펄스레이저 증착법 (PLD)으로 (0001)면 사파이어 기판 위에 성장시킨 ZnO 박막의 두게 변화가 표면형상, 결정성 및 전기/광학적 특성에 미치는 효과에 대하여 조사하였다. SEM 및 XRD 분석을 통해 약 4000 의 두께에서 3차원 island들이 생성되며, 박막의 두께가 증가함에 따라 결정립의 크기가 증가하고, 결정성이 향상되었음을 알 수 있었다 상온에서의 PL 측정을 통해 두께가 증가함에 따라 ultraviolet(UV) 및 deep level emission peak의 강도가 급격히 증가함을 알 수 있었다. Hall측정 결과, 모든 박막들이 H형 전도도를 보였고, 운반자농도가 $10^{19}$ $cm^{-3}$ 이상이었으며, 두께가 증가할수록 운반자농도가 감소하여 약 4000 에서 포화되는 경향을 보였다. 따라서, 사파이어 기판 위에 증착시킨 ZnO 박막은 약 4000 의 두께에서 bulk ZnO의 특성을 나타내었다.