Abstract
Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.
ZnS 화합물은 근자외선 영역의 직접천이형 띠 간격을 갖으며 청색 발광 다이오드나 레이저의 소재로 기대되는 물질이다. 결정구조는 X선 회절무늬를 분석한 결과 zinc blonde구조임을 알 수 있었다. 격자상수는 $a_o=5.411{\AA}$이었다. ZnS단결정의 광학적 흡수, 광전류와 광발광 스펙트럼 등 광학적 특성을 조사하였다. 광학적 띠간격 에너지는 3.61eV이었고 $800^{\circ}C$에서 열처리한 ZnS의 띠 간격 에너지는 광전류 측정 결과 as-grown-ZnS에 비하여 0.1eV 정도 작아짐을 알 수 었었다. 광발광 스펙트럼은 30K에서 293K까지 as-grown-ZnS와 $800^{\circ}C$에서 열처리한 경우에 대하여 각각 측정되었다. As-grown ZnS단결정의 광발광 피크는 350nm, 392nm, 465nm에서 $800^{\circ}C$에서 열처리한 경우 349nm, 370nm, 394nm 518nm, 572nm에서 각각 측정되었다.