• Current Optics and Photonics
• /
• v.2 no.3
• /
• pp.221-225
• /
• 2018

We suggested the use of miniature hollow glass tubes having high ultraviolet (UV) transmission characteristics for the protection of optical-fiber-type UV sensors. We have recently proposed a highly sensitive optical sensor in the UV spectral range, using a fiber Bragg grating (FBG) coated with an azobenzene polymer as the photoresponsive material. In this study, we used UV-transparent miniature glass tubes to protect the etched FBG with the azobenzene polymer coating. This technique will be very useful for protecting various fiber-based UV sensors.

• Journal of Sensor Science and Technology
• /
• v.28 no.3
• /
• pp.152-156
• /
• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Journal of Internet Computing and Services
• /
• v.14 no.2
• /
• pp.45-51
• /
• 2013

In this paper, the combination of ultraviolet and infrared sensors based design for flame signal detection algorithms was proposed with the application of light-wavelength from burning. And, the performance result of image detection was compared by an ultraviolet sensor, an infrared sensor, and the proposed dual-mode sensors(combination of ultraviolet and infrared sensors).

• Ceramist
• /
• v.22 no.1
• /
• pp.27-35
• /
• 2019

Research on ultraviolet (UV) light detection has attracted considerable attention from scientific researchers in related fields. It can be said that it is a very important time to accurately monitor the UV irradiation amount according to the wavelength region in real time. The oxide is very diverse in its kind and has the advantage of being able to efficiently control the band gap through band gap engineering. In addition, it is very stable in response to heat and atmospheric oxygen when UV is absorbed. Also, there is a known method that can effectively manufacture oxide nanoparticles and nanorods through various synthesis methods, and researches for improving the sensitivity of UV sensors have been carried out using this method. In this paper, we introduce the materials that can be used as UV sensors among various wide band oxide materials, and review the results of researches of various UV sensors using nano materials.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.425-431
• /
• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of Sensor Science and Technology
• /
• v.29 no.3
• /
• pp.187-193
• /
• 2020

Ultraviolet (UV) sensors are widely applied in industrial and military fields such as environmental monitoring, medicine and astronomy. Zinc oxide (ZnO) is considered as one of the promising materials for UV sensors because of its ease of fabrication, wide bandgap (3.37 eV) and high chemical stability. In this study, we used the hydrothermal growth of ZnO to form two types of ZnO nanostructures (Nanoflower and nanorod) and applied them to a UV sensor. To improve the performance of the UV sensor, the hydrothermal growth was used in a two-step process for fabricating ZnO hierarchical nanostructures. The fabricated ZnO hierarchical nanostructure improved the performance of the UV sensor by increasing the ratio of volume to surface area and the number of nanojunctions compared to one-step hydrothermal grown ZnO nanostructure. The UV sensor based on the ZnO hierarchical nanostructure had a maximum photocurrent of 44 ㎂, which is approximately 3 times higher than that of a single nanostructure. The UV sensor fabrication method presented in this study is simple and based on the hydrothermal solution process, which is advantageous for large-area production and mass production; this provides scope for extensive research in the field of UV sensors.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.28 no.3
• /
• pp.78-83
• /
• 2014

To minimize the financial loss due to power facility malfunction, on-line diagnostic techniques are required to grasp any abnormal state of facilities in the live line as well as devices to diagnose abnormal states of power facility in an easy and prompt manner. This study aims to develop a portable UV detecting system by means of UV sensors for easier and efficient inspection of the degradation state of power facility in a long distance. Accordingly, it includes a simulation of corona discharges that may occur due to degradation of power facility and detection of ultraviolet pulse generation depending on the corona discharge intensity and measuring distance in application of UV sensors. Additionally, the optimal algorithm is determined for its application to the system's degradation diagnosis program based on the measured experiment data.

• Journal of Welding and Joining
• /
• v.23 no.4
• /
• pp.53-58
• /
• 2005

We designed a weld monitoring system with UV and IR sensors using a embedded DSP controller for implementing a distribution system; running stand alone and communication with outside by industrial standard protocols. Also this system provided a USB port in order to be acquiring data in PC. The user interface program in PC visualized the IR and W data in time, frequency and state space. A correlation of IR and UV signals showed closely related to weld quality. A rapid change of geometry can be found through a moving average filter. And the average value of IR signal at an interval represented a welding width and depth. Through these results, we proposed a monitoring algorithm for a integer type DSP.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.10a
• /
• pp.100-103
• /
• 2007

A microlens array has been required to improve light conversion efficiency in image sensors. A microlens array can be usually fabricated by photoresist reflow, hot-embossing, micro injection molding, and UV-imprinting. Among these processes, a UV-imprinting, which is operated at room temperature with relatively low applied pressure, can be a desirable process to integrate microlens array on image sensors, because this process provides the components with low thermal expansion, enhanced stability, and low birefringence, furthermore, it is more suitable for mass production of high quality microlens array. In this study, to analyze the optical properties of the wafer scale microlens array integrated image sensor, another wafer scale simulated image sensor chip array was designed and fabricated. An aspherical square microlens was designed and integrated on a simulated image sensor chip array using a UV-imprinting process. Finally, the optical performances were measured and analyzed.

• Journal of Sensor Science and Technology
• /
• v.13 no.5
• /
• pp.350-355
• /
• 2004

A novel UV sensor was manufactured and characterized using the evanescentfield coupling between fiber-planar waveguide (PWG) coupler and prism. A spiroxazine dye was chosen as planar waveguide because its photochromic isomerization induced by UV irradiation. A novel UV sensor was proposed to measure the variation of refractive index and absorption coefficient simultaneously. The wavelength responses of these sensors by UV exposure times were measured 0.48 nm/sec, 0.757 nm/sec, and ATR output power variations were measured $-0.424{\mu}W$/sec and $-0.62{\mu}W$/sec when UV exposure power were 3 mW and 5 mW, respectively.