• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.1-142.1
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• 2018

This research presents a new field effect transistor (FET) by using liquid crystal gate dielectric with remote gate. The fabrication of thin-film transistors (TFTs) was used Indium tin oxide (ITO) for the source, drain, and gate electrodes, and indium gallium zinc oxide (IGZO) for the active semiconductor layer. 5CB liquid crystal was used for the gate dielectric material, and the remote gate and active layer were covered with the liquid crystal. The output and transfer characteristics of the LC-gated TFTs were investigated.

• 한국ITS학회:학술대회논문집
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• 2004.11a
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• pp.202-207
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• 2004

• The Journal of Sustainable Design and Educational Environment Research
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• v.10 no.1
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• pp.1-9
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• 2011

In order to solve the current shortage of parking spaces, and redesign the main gate area of the U University, the research investigated some cases of other schools located in Seoul which actively constructed multi-purpose building structures. Those schools are considered to be good samples showing their efforts to fulfill the needs of more parking spaces in their campuses, and to cover with the growing needs of multi-functioned facilities accommodating services of academic affairs, reading room spaces, and amenities. With the investigation, the research finded out the current trends of campus developments from the sample schools, such as underground parking facilities connected with multi-purpose buildings along the main arteries of campuses. Following the trends the research thoroughly examined the present conditions of our school and tried to make some possible alternatives for the facilities. Under the conditions, the research suggested 1)to construct underground parking lots accepting around 1,000 cars under the ivory tower square located in front of University Administration Building, 2)to develop a big-scaled open square at the university main gate, and 3)to build a multi-purpose structure along the main street of the campus, which included administration services, studying spaces, and some commercial facilities.

• 한국ITS학회:학술대회논문집
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• 2002.11a
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• pp.43-46
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.173-173
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.168-169
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• 2005

• The Magazine of the IEIE
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• v.19 no.6
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• pp.55-60
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• 1992

본 논문은 ISDN U-interface 회로 중에서 digital 부분의 설계에 대하여 기술하였다. 이 회로는 MMS43 code와 echo cancellation 방식을 사용하여 구현되었다. 회로 구성상 interface부분과 DSP부분으로 나누어 설계하였으며 gate-array ASIC을 이용하여 chip을 제작하였다. 공정은 1um CMOS 기술을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.6-6
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• 2009

We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.2-287.2
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• 2016

Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.262-266
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• 2001

We have presented the electrical properties of the quantum wire fabricated by split gate on GaAs/AlGaAs heterostructures by using the Shubnikov de Haas oscillation and quantum Hall effect measurements. We observed the 1D properties of the sample as increasing gate voltage. The misfit between quantum Hall plateau and minima in Shubnikov do Haas oscillations are interpreted as Landauer-B$"{u}$ tikker formula based on the edge state transport.port.