• Title/Summary/Keyword: Two-Dimensional Channel

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Analysis of Hydraulic Characteristics for Stream Diversion in Small Stream (소하천에서 유로변경에 따른 수리특성 분석)

  • An, Sang-Jin;Jeon, Gye-Won
    • Journal of Korea Water Resources Association
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    • v.34 no.5
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    • pp.561-566
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    • 2001
  • This study is the analysis of hydraulic characteristic for stream diversion reach by numerical model test. Through it we can provide the basis data in flood, and in grasping stream flow characteristics. Analysis of hydraulic characteristics in Seoknam stream were implemented by using computer model HEC-RAS(one-dimensional model) and RMA2(two-dimensional finite element model). As a result we became to known that RMA2 to simulate left, main channel, right in stream is more effective method in analysing flow in channel bends, steep slope, complex bed form effect stream flow characteristics, than HEC-RAS.

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Tide and Sediment Transport in the Keum River Estuary (사강하구의 조석 및 토사이동)

  • 최병호;강경구;이석우
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.1 no.1
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    • pp.31-43
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    • 1989
  • Tidal asymmetry and the associated sediment dynamics in the Keum River Estuary has been investigated from a numerical tidal model. Modeling efforts were focussed on the simulation of large drying sandflat exposed at the mouth of the Estuary and dynamic combination of two-dimensional estuary model and one-dimensional river model. Despite strong frictional attenuation within the estuary, the M4 tides reach significant amplitude, resulting in strong tidal distortion. Model results show that the asymmetry over the area exhibit more intense flood flows transport than do less intense ebb flows of longer duration. This causes filling of the estuary as evidenced by large sandflats spread over the inner area. The spatial distribution of peak bottom stress computed from the tidal model suggest that present tidal sedimentation regime may be altered significantly, especially in the approach channel to outer Kunsan port and downstream part of the dike, due to the construction of cross-channel barrier.

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A Study on the Bed Change in Reservoirs (저수지 하상변동에 관한 연구)

  • Lee, Gwan-Su;Lee, Yeong-Seok;Jeong, Byeong-Geon
    • Journal of Korea Water Resources Association
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    • v.30 no.4
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    • pp.401-409
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    • 1997
  • This study aims to predict the bed elevation change of river and reservoir by compound water model, two-dimensional jet model and one-dimensional density current model, assuming that the river has a single channel and the reservoir has multiple channels. In numerical model, discharge and water level changes is obtained by flow continuity equation and flow momentum equation through double-sweep method, and then applied to sediment continuity equation to predict the scour and deposit of channel bed. The span ranged from the Bosung Dam to Mundueok Bridge at the upstream of Juam Dam, which is approximately 31km long (13km of river and 18km of reservoir), is taken as survey area.

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Modeling and Simulation on Ion Implanted and Annealed Indium Distribution in Silicon Using Low Energy Bombardment (낮은 에너지로 실리콘에 이온 주입된 분포와 열처리된 인듐의 거동에 관한 시뮬레이션과 모델링)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.750-758
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    • 2016
  • For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

Application of 2 Dimensional Numerical Model for Analysis of Riprap Weir Effect (Riprap Weir 효과 분석을 위한 2차원 수치해석 모형의 적용)

  • Kim, Sang-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.2
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    • pp.1441-1449
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    • 2015
  • At the bends of a river, the deflected flow of high energy erodes the embankment and transports sediment, ultimately changing the river's course. Such phenomena lead to instability of the embankment and may cause serious problems for nearby roads, land, or riverside structures. This study intends to analyze the characteristics of hydraulic flow at S-shaped bends after the installation of Riprap Weirs designed to prevent changes in a river's course and embankment erosion. An experimental channel was constructed by a two-dimensional CCHE2D model, and analyzed the characteristics of hydraulic flow with and without the Riprap Weirs. Also, the characteristics of hydraulic flow at the inner and outer sides of river bends and at points near reservoirs were analyzed, depending on the intervals between the Riprap Weirs.

Parameter dependent conduction path for nano structure double gate MOSFET (나노구조 이중게이트 MOSFET에서 전도중심의 파라미터 의존성)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.3
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    • pp.541-546
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    • 2008
  • In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

A Study of the Compound Choking Phenomenon of Gas Flow in a Converging Nozzle (축소노즐에서 발생하는 기체유동의 복합 초킹현상에 관한 연구)

  • Lee Jun-Hee;Woo Sun-Hoon;Kim Heuy-Dong
    • Proceedings of the KSME Conference
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    • 2002.08a
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    • pp.147-150
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    • 2002
  • In general, a single gas flow through a converging nozzle is choked when the pressure communications between the downstream and upstream flowfields are broken by the sonic condition of Mach number, M=1. A similar phenomenon may occur In two streams of different stagnation properties flowing side by side in a converging nozzle. In this case, the limiting condition of M=1 for flow choking is no longer applied to such a compound compressible flow. The compound choking phenomenon can be explained by means of a compound sound wave at the nozzle exit. In order to detail the flow characteristics involved in such a compound choking of the two streams, the two-dimensional, compressible, Wavier-Stokes equations have been solved using a fully implicit finite volume method and compared with the results of the one-dimensional theoretical analysis. The computational and theoretical results show that the compound sound wave can reasonably explain the compound choking phenomenon of the two streams in the convergent flow channel.

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A Numerical Study on the Effect of PCB Structure Variation on the Electronic Equipment Cooling (PCB 구조변화가 전자장비 냉각에 미치는 영향에 관한 수치적 연구)

  • ;;Park, Kyoung-Woo
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.12
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    • pp.3329-3343
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    • 1995
  • The interaction of mixed convection and surface radiation in a printed circuit board(PCB) is investigated numerically. The electronic equipment is modeled by a two-dimensional channel with three hot blocks. In order to calculate the turbulent flow characteristics, the low Reynolds number k-.epsilon. model which is proposed by Launder and Sharma is applied. The S-4 approximation is used to solve the radiative transfer equation. The effects of the Reynolds number and geometric configuration variation of PCB on the flow and heat transfer characteristics are analyzed. As the results of this study, it is found that the thermal boundary layer occured at adiabatic wall in case with thermal radiation included, and the effect of radiation is also found to be insignificant for high Reynolds numbers. It is found, as well, that the heat transfer increases as the Reynolds number and block space increase and the channel height decreases and the heat transfer of vertical channel is greater than that of horizontal channel.

The Change of I-V Characteristics by Gate Voltage Stress on Few Atomic Layered MoS2 Field Effect Transistors (수 원자층 두께의 MoS2 채널을 가진 전계효과 트랜지스터의 게이트 전압 스트레스에 의한 I-V 특성 변화)

  • Lee, Hyung Gyoo;Lee, Gisung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.135-140
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    • 2018
  • Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

Exergetic analysis for optimization of a rotating equilateral triangular cooling channel with staggered square ribs

  • Moon, Mi-Ae;Kim, Kwang-Yong
    • International Journal of Fluid Machinery and Systems
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    • v.9 no.3
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    • pp.229-236
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    • 2016
  • Exergetic analysis was introduced in optimization of a rotating equilateral triangular internal cooling channel with staggered square ribs to maximize the net exergy gain. The objective function was defined as the net exergy gain considering the exergy gain by heat transfer and exergy losses by friction and heat transfer process. The flow field and heat transfer in the channel were analysed using three-dimensional Reynolds-averaged Navier-Stokes equations under the uniform temperature condition. Shear stress transport turbulence model has been selected as a turbulence closure through the turbulence model test. Computational results for the area-averaged Nusselt number were validated compared to the experimental data. Three design variables, i.e., the angle of rib, the rib pitch-to-hydraulic diameter ratio and the rib width-to-hydraulic diameter ratio, were selected for the optimization. The optimization was performed at Reynolds number, 20,000. Twenty-two design points were selected by Latin hypercube sampling, and the values of the objective function were evaluated by the RANS analysis at these points. Through optimization, the objective function value was improved by 22.6% compared to that of the reference geometry. Effects of the Reynolds number, rotation number, and buoyancy parameter on the heat transfer performance of the optimum design were also discussed.