• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.607-608
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• 2009

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.424-427
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• 2017

This study investigated the effect of strain on hole mobility and hole effective mass in a p-channel rectangular nanowire with two-dimensional confinement. We obtained the valence energy band structure using the six-band k.p method and calculated the mobility and effective mass of the hole in the [100] direction taking the strain effect into account in the inversion region. The hole mobility of strained silicon was calculated using Kubo-Greenwood formalism. As a result, it showed good performance compared to relaxed silicon, but its magnitude was insignificant.

• Journal of Mechanical Science and Technology
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• v.15 no.12
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• pp.1853-1859
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• 2001

An experimental study is presented for a flow field in a two dimensional wavy channels by PIV. This flow has two major applications such as a blood flow simulation and the enhancement of heat transfer in a heat exchanger. While the numerical flow visualization results have been limited to the fully developed cases, existing experimental results of this flow were simple qualitative ones by smoke or dye streak test. Therefore, the main purpose of this study is to produce quantitative flow data for fully developed and developing flow regimes by the Correlation Based Correction PIV (CBC PIV) and to conjecture the analogy between flow characteristics and heat transfer enhancement with low pumping power. Another purpose of this paper is to examine the onset position of the transition and the global mixing, which results in transfer enhancement. PIV results on the Fully developed and developing flow in a wavy channel at Re=500, 1000 and 2000 are obtained. for the case Reynolds Number equals 500, the PIV results are compared with the finite difference numerical solution.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.74-79
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• 2006

General formula are presented for the maximum power available from the tidal head in a closed basin and from the tidal currents in a channel connecting two large bodies of water. In the latter case, the available energy cannot be estimated from the kinetic energy flux in the undisturbed state, but can be obtained from knowledge of the tidal head between the ends of the channel and the maximum volume flux in the undisturbed state. The results are supported by detailed calculations for Johnstone Strait, British Columbia, using a two-dimensional finite element model. The model also allows an extension to the case of multiple channels. More work is needed to allow for partial tidal fences which do not occupy the whole cross-section of a channel.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.9
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• pp.2973-2980
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• 1996

Secondary instability in an obstructed channel is investigated using direct numerical simulation. Flow geometry under consideration is a plane channel with two-dimensional thin obstacles mounted symmetrically in the vertical direction and periodically in the streamwise direction. Flow separation occurs at the tip of the sharp obstacles. As a basic flow, we consider an unsteady periodic solution which results from Hopf bifurcation. Depending on the Reynolds number, the basic flow becomes unstable to three-dimensional disturbances, which results in a chaotic flow. Numerical results obtained are consistent with experimental findings currently available.

• Journal of Ocean Engineering and Technology
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• v.18 no.3
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• pp.1-7
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• 2004

Flaw visualization and velocity field measurement methods have practical applications in the various fluid engineering fields, such as mechanics, ships, and heat fluids. In this study, the basic principles and theoretical methods are used to establish an application technique of Particle Imae Velocimetry(abbreviated to PIV below). Accordingly, the measured results of velocity field distribution of a section inside the Circulating Water Channel (abbreviated to CWC below) are computed using the PIV is presented. The uniformity of velocity distribution of the section in CWC is confirmed, by comparing this PIV data with the existing current meter data. Also, in order to measure the flaw fields of surroundings of 2-dimensional cylinder in the CWC, the flaw visualization technique using the PIV is applied.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.442-449
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• 2012

Cognitive Radio(CR) is the technology that allocates the frequency by using dynamic spectrum access. We proposed a model to calculate the optimal level of the cognitive radiotelegraph, where secondary users opportunistically share the spectrum with primary users through the spectrum sensing. When secondary user with cognitive radio detects the arrival of a primary user in its current channel, the secondary user moves to the idle channel or be placed in the virtual queue. We assume that the primary users have finite buffers and the population of secondary users is finite. Using a two-dimensional Makov model with preemptive priority queueing, we could derive the blocking and waiting probability as well as the optimal level of cognitive radiotelegraph under a various range of parameter circumstances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.77-78
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• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.