• Maxillofacial Plastic and Reconstructive Surgery
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• v.40
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• pp.3.1-3.8
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• 2018

Background: In this research article, we evaluate the use of sub-periosteal tunneling (tunnel technique) combined with alloplastic in situ hardening biphasic calcium phosphate (BCP, a compound of β-tricalcium phosphate and hydroxyapatite) bone graft for lateral augmentation of a deficient alveolar ridge. Methods: A total of 9 patients with deficient mandibular alveolar ridges were included in the present pilot study. Ten lateral ridge augmentation were carried out using the sub-periosteal tunneling technique, including a bilateral procedure in one patient. The increase in ridge width was assessed using CBCT evaluation of the ridge preoperatively and at 4 months postoperatively. Histological assessment of the quality of bone formation was also carried out with bone cores obtained at the implant placement re-entry in one patient. Results: The mean bucco-lingual ridge width increased in average from 4.17 ± 0.99 mm to 8.56 ± 1.93 mm after lateral bone augmentation with easy-graft CRYSTAL using the tunneling technique. The gain in ridge width was statistically highly significant (p = 0.0019). Histomorphometric assessment of two bone cores obtained at the time of implant placement from one patient revealed 27.6% new bone and an overall mineralized fraction of 72.3% in the grafted area 4 months after the bone grafting was carried out. Conclusions: Within the limits of this pilot study, it can be concluded that sub-periosteal tunneling technique using in situ hardening biphasic calcium phosphate is a valuable option for lateral ridge augmentation to allow implant placement in deficient alveolar ridges. Further prospective randomized clinical trials will be necessary to assess its performance in comparison to conventional ridge augmentation procedures.

• Explosives and Blasting
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• v.12 no.4
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• pp.10-21
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• 1994

The Tunneling Technique has been developing highly in Japan. Induced NATM pattern is ap-plied as it-self but is an apportunity to upgrade technologes of Concernning. As a result, Nonnel system as Laser marking system is significant developed result. Japan-Korea Tunnel leasing by international High way project is regarded hope-full for the world peace. It has described Euro-Tunnel too.

• The KIPS Transactions:PartC
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• v.10C no.4
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• pp.519-524
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• 2003

During the period of co-existence of IPv4 and IPv6, Ipv6 over IPv4 tunneling technique is intended as a start-up transition mechanism. However, most of IPv4 firewalls do not support the IPv6 over IPv4 tunneling packet filtering. Finally, it is impossible that a user inside IPv4 firewall connects with an IPv6 host across IPv4 network. Without any additional hardware or changing the policy of IPv4 firewall, we solve this problem using proposed Double-encapsulation and applied-HTTP tunneling technique that are end-to-end solutions. This enables cheaper IPv6 migration solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.6
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• pp.1038-1044
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• 2006

Tunneling technique does a role to network authentication or the preservation support of date at high-speed network In order to this, IPsec, SOCKS V5 or GRE tunneling protocol have been using. This paper embodies the offer base of communication service by changing routing route to special IP band for connection interception of harmful service md according to user's needs, by changing routing route to special service at high-speed network. So we measure and analysis action principle of GRE with GRE protocol, the result apply to a service of connection control and authentication base.

• Geomechanics and Engineering
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• v.15 no.5
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• pp.1039-1046
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• 2018

This paper presents a limit analysis of the series of construction stages of shallow tunneling method by investigating their respective safety factors and failure mechanisms. A case study for one particular cross-section of Beijing Subway Line 7 is undertaken, with a focus on the effects of multiple soil layers and construction sequencing of dual tunnels. Results show that using the step-excavation technique can render a higher safety factor for the excavation of a tunnel compared to the entire cross-section being excavated all at once. The failure mechanisms for each different construction stage are discussed and corresponding key locations are suggested to monitor the safety during tunneling. Simultaneous excavation of dual tunnels in the same cross-section should be expressly avoided considering their potential negative interactions. The normal and shear forces as well as bending moment of the primary lining and locking anchor pipe are found to reach their maximum value at Stage 6, before closure of the primary lining. Designing these struts should consider the effects of different construction stages of shallow tunneling method.

• Journal of the Korea Society of Computer and Information
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• v.17 no.11
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• pp.73-81
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• 2012

This paper proposes an ETWAD(Encapsulation and Tunneling Wormhole Attack Detection) design based on positional information and hop count on Ad-Hoc Network. The ETWAD technique is designed for generating GAK(Group Authentication Key) to ascertain the node ID and group key within Ad-hoc Network and authenticating a member of Ad-hoc Network by appending it to RREQ and RREP. In addition, A GeoWAD algorithm detecting Encapsulation and Tunneling Wormhole Attack by using a hop count about the number of Hops within RREP message and a critical value about the distance between a source node S and a destination node D is also presented in ETWAD technique. Therefore, as this paper is estimated as the average probability of Wormhole Attack detection 91%and average FPR 4.4%, it improves the reliability and probability of Wormhole Attack Detection.

• Bulletin of the Korean Chemical Society
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• v.23 no.1
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• pp.71-74
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• 2002

The apparent barrier height for charge transfer through an interfacial water layer between a Pt/Ir tip and a gold surface has been measured using STM technique. The average thickness of the interfacial water layer inside an STM junction was controlled by the amount of moisture. A thin water layer on the surface was formed when relative humidity was in the range of 10 to 80%. In such a case, electron tunneling through the thin water layer became the majority of charge transfers. The value of the barrier height for the electron tunneling was determined to be 0.95 eV from the current vs. distance curve, which was independent of the tip-sample distance. On the other hand, the apparent barrier height for charge transfer showed a dependence on tip-sample distance in the bias range of 0.1-0.5 V at a relative humidity of approximately 96%. The non-exponentiality for current decay under these conditions has been explained in terms of electron tunneling and electrochemical processes. In addition, the plateau current was observed at a large tip-sample distance, which was caused by electrochemical processes and was dependent on the applied voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10b
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• pp.794-797
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• 1988

G. Binnig and H. Rohrer introduced the Scanning Tunneling Microscope (STM) in 1982 and developed it into a powerful and not to be missed physical tool. Scanning tunneling Microscopy is a real space surface imaging method with the atomic or subatomic resolution in all three dimensions. The tip is scanned over the surface by two piezo translators mounted parallel (X-piezo and Y-piezo) to the surface and perpendicular to each other. The voltage applied to the third piezo (Z-piezo) translator mounted perpendicular to the surface to maintain the tunneling current through the gap at a constant level reflects then the topography of the surface. The feed back control loop for the constant gap current is designed using the automatic control technique. In the designing process of the feed back loop, the identification of the gap dynamics is very complex and has difficulty. In this research, using some suitable test signals, the system dynamics of the gap including the Z-piezo are investigated. Especially, in this paper, a system model is proposed for the gap and Z-piezo series system. Indicial response is used to find out the model. The driving voltage of the Z-piezo and the tunneling current are considered as input and output signals respectively.