• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• Geomechanics and Engineering
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• 제17권3호
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• pp.237-245
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• 2019

In deep mixed rock strata, a double shield TBM (DS-TBM) is easy to be entrapped by a large force during tunneling. In order to reduce the probability of the entrapment, we need to investigate a favorable driving direction, either driving with or against dip, which mainly associates with the angle between the tunneling axis and strike, ${\theta}$, as well as the dip angle of rock strata, ${\alpha}$. We, therefore, establish a 3DEC model to show the changes of displacements and contact forces in mixed rock strata through LDP (longitudinal displacement profile) and LFP (longitudinal contact force profile) curves at four characteristic points on the surrounding rock. This is followed by a series of numerical models to investigate the favorable driving direction. The computational results indicate driving with dip is the favorable tunneling direction to reduce the probability of DS-TBM entrapment, irrespective of ${\theta}$ and ${\alpha}$, which is not in full agreement with the guidelines proposed in RMR. From the favorable driving direction (i.e., driving with dip), the smallest contact force is found when ${\theta}$ is equal to $90^{\circ}$. The present study is therefore beneficial for route selection and construction design in TBM tunneling.

• 한국정보통신학회논문지
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• 제11권5호
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• pp.955-960
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• 2007

본 연구에서는 단채널효과를 감소시키기 위하여 개발되고 있는 이중게이트 MOSFET의 게이트인가 전압에 따른 터널링전류의 변화를 관찰하고자한다. 소자가 나노단위까지 스케일링되면서 터널링전류는 매우 중요한 전류요소가 되었으며 특히 차단전류를 구성하고 있는 열방사전류와 비교하면 소자의 크기가 미세해질수록 급격히 증가하는 특성을 보이고 있다. 이를 감소시키기 위한 연구가 활발히 진행되고 있으며 본 연구에서는 이에 부응하기 위하여 게이트 인가전압에 따른 터널링전류의 변화를 고찰할 것이다. 게이트전압에 대한 터널링전류 변화를 관찰하기 위하여 전위분포함수를 유도하였으며 전위분포함수와 터널링확률의 관계로부터 차단전류변화를 유도하였다. 이와같이 유도한 전류는 열방사전류와 비교되었으며 터널링전류 감소를 위한 유효게이트전압에 대한 관계를 유도하였다.

• 한국컴퓨터정보학회논문지
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• 제17권11호
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• pp.73-81
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• 2012

본 논문에서는 애드 혹 네트워크의 노드 위치 정보와 홉 수를 이용하여 캡슐화 웜홀 공격과 터널링 웜홀 공격을 탐지하는 ETWAD(Encapsulation and Tunneling Wormhole Attack Detection) 기법을 설계하였다. ETWAD 탐지 기법은 애드 혹 네트워크 내의 노드 ID와 그룹 키로 노드의 신분을 확인할 수 있는 GAK(Group Authentication Key)를 생성하여 RREQ와 RREP에 추가하여 애드 혹 네트워크의 구성원임으로 인증할 수 있도록 설계하였다. 또한, ETWAD 탐지 기법은 RREP 메시지 내의 홉 수를 카운트하고, 근원지 노드 S와 목적지 노드 D의 거리를 계산하여 임계치와 홉 수를 이용하여 캡슐화 웜홀 공격, 터널링 공격을 탐지하는 GeoWAD 알고리즘을 설계하였다. 그 결과, 평균 웜홀 공격 탐지율이 91%, 평균 FPR이 4.4%로 평가되므로 ETWAD 탐지 기법은 웜홀 공격 탐지율과 웜홀 공격 탐지의 신뢰성을 향상시켰다고 볼 수 있다.

• 한국재료학회지
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• 제26권8호
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• EDISON SW 활용 경진대회 논문집
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• 제2회(2013년)
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• pp.240-242
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• 2013

In this paper, novel Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) is proposed. This proposed device is designed to decrease off-current around 2~6 orders of magnitude compared to the gate-channel size matched TFET. Mechanism of CNT G-E TFET creates additional steps in energy band structure so that off-current can be reduced. Since CNT TFETs show a great probability for tunneling processes and they are beneficial for the overall device performance in terms of switching speed and power consumption, CNT G-E TFET looks pretty much promising.

• Journal of the Optical Society of Korea
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• 제19권2호
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• pp.188-198
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• 2015

The validity of applying the Modified Airy Function (MAF) method to the problems of graded-index optical waveguides and graded potential barrier analysis was critically examined. In the former case, the method yielded very accurate results from the derived eigenvalue equations. In the latter case, however, the same method produced results that deviated significantly from exact numerical results for barriers with a smooth peak. The causes of the discrepancies were investigated in detail.

• Bulletin of the Korean Chemical Society
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• 제13권4호
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• pp.385-388
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• 1992

The transition probabilities for the thermal intramolecular electron transfer and the optical intervalence transfer band for a symmetric mixed-valence Cu(I)-Cu(II) compound were used to extract the PKS parameters $\varepsilon$ = -1.15, ${\lambda}$ = 2.839, and ${\nu}g$- = 923 $cm^{-1}$. These parameters determine the potential energy surfaces and vibronic energy levels. Three pairs of vibrational levels are below the top of the energy barrier in the lower potential surface. The contribution of each vibrational state to the intramolecular electron transfer was calculated. It is shown that the three pairs of vibrational states below the top of the barrier are responsible for most of the electron transfer at 261-306 K. So the intramolecular electron transfer in this system is a tunneling process. The transition probability exhibits the usual high-temperature Arrhenius behavior, but at lower temperature falls off to a temperature-independent value as tunneling from the lowest levels becomes the limiting process.

• Geomechanics and Engineering
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• 제2권1호
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• pp.57-69
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• 2010

A major consideration in the design of tunnels in urban areas is the prediction of the ground movements and surface settlements associated with the tunneling operations. Excessive ground movements can damage adjacent building and utilities. In this paper, a neural network model is used to predict the maximum surface settlement, based on instrumented results from three separate EPB tunneling projects in Singapore. This paper demonstrates that by coupling the trained neural network model to a spreadsheet optimization technique, the reliability assessment of the settlement serviceability limit state can be carried out using the first-order reliability method. With this method, it is possible to carry out sensitivity studies to examine the effect of the level of uncertainty of each parameter uncertainty on the probability that the serviceability limit state has been exceeded.