• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• Geomechanics and Engineering
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• v.17 no.3
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• pp.237-245
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• 2019

In deep mixed rock strata, a double shield TBM (DS-TBM) is easy to be entrapped by a large force during tunneling. In order to reduce the probability of the entrapment, we need to investigate a favorable driving direction, either driving with or against dip, which mainly associates with the angle between the tunneling axis and strike, ${\theta}$, as well as the dip angle of rock strata, ${\alpha}$. We, therefore, establish a 3DEC model to show the changes of displacements and contact forces in mixed rock strata through LDP (longitudinal displacement profile) and LFP (longitudinal contact force profile) curves at four characteristic points on the surrounding rock. This is followed by a series of numerical models to investigate the favorable driving direction. The computational results indicate driving with dip is the favorable tunneling direction to reduce the probability of DS-TBM entrapment, irrespective of ${\theta}$ and ${\alpha}$, which is not in full agreement with the guidelines proposed in RMR. From the favorable driving direction (i.e., driving with dip), the smallest contact force is found when ${\theta}$ is equal to $90^{\circ}$. The present study is therefore beneficial for route selection and construction design in TBM tunneling.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.955-960
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• 2007

In this paper, the deviation of tunneling current for gate voltage has been investigated in double gate MOSFET developed to decrease the short channel effects. In device scaled to nano units, the tunneling current is very important current factor and rapidly increases,compared with thermionic emission current according to device size scaled down. We consider the change of tunneling current according to gate voltage in this study. The potential distribution is derived to observe the change of tunneling current according to gate voltage, and the deviation of off-current is derived from the relation of potential distribution and tunneling probability. The derived current is compared with the termionic emission current, and the relation of effective gate voltage to decrease tunneling current is obtained.

• Journal of the Korea Society of Computer and Information
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• v.17 no.11
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• pp.73-81
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• 2012

This paper proposes an ETWAD(Encapsulation and Tunneling Wormhole Attack Detection) design based on positional information and hop count on Ad-Hoc Network. The ETWAD technique is designed for generating GAK(Group Authentication Key) to ascertain the node ID and group key within Ad-hoc Network and authenticating a member of Ad-hoc Network by appending it to RREQ and RREP. In addition, A GeoWAD algorithm detecting Encapsulation and Tunneling Wormhole Attack by using a hop count about the number of Hops within RREP message and a critical value about the distance between a source node S and a destination node D is also presented in ETWAD technique. Therefore, as this paper is estimated as the average probability of Wormhole Attack detection 91%and average FPR 4.4%, it improves the reliability and probability of Wormhole Attack Detection.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.240-242
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• 2013

In this paper, novel Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) is proposed. This proposed device is designed to decrease off-current around 2~6 orders of magnitude compared to the gate-channel size matched TFET. Mechanism of CNT G-E TFET creates additional steps in energy band structure so that off-current can be reduced. Since CNT TFETs show a great probability for tunneling processes and they are beneficial for the overall device performance in terms of switching speed and power consumption, CNT G-E TFET looks pretty much promising.

• Journal of the Optical Society of Korea
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• v.19 no.2
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• pp.188-198
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• 2015

The validity of applying the Modified Airy Function (MAF) method to the problems of graded-index optical waveguides and graded potential barrier analysis was critically examined. In the former case, the method yielded very accurate results from the derived eigenvalue equations. In the latter case, however, the same method produced results that deviated significantly from exact numerical results for barriers with a smooth peak. The causes of the discrepancies were investigated in detail.

• Bulletin of the Korean Chemical Society
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• v.13 no.4
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• pp.385-388
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• 1992

The transition probabilities for the thermal intramolecular electron transfer and the optical intervalence transfer band for a symmetric mixed-valence Cu(I)-Cu(II) compound were used to extract the PKS parameters $\varepsilon$ = -1.15, ${\lambda}$ = 2.839, and ${\nu}g$- = 923 $cm^{-1}$. These parameters determine the potential energy surfaces and vibronic energy levels. Three pairs of vibrational levels are below the top of the energy barrier in the lower potential surface. The contribution of each vibrational state to the intramolecular electron transfer was calculated. It is shown that the three pairs of vibrational states below the top of the barrier are responsible for most of the electron transfer at 261-306 K. So the intramolecular electron transfer in this system is a tunneling process. The transition probability exhibits the usual high-temperature Arrhenius behavior, but at lower temperature falls off to a temperature-independent value as tunneling from the lowest levels becomes the limiting process.

• Geomechanics and Engineering
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• v.2 no.1
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• pp.57-69
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• 2010

A major consideration in the design of tunnels in urban areas is the prediction of the ground movements and surface settlements associated with the tunneling operations. Excessive ground movements can damage adjacent building and utilities. In this paper, a neural network model is used to predict the maximum surface settlement, based on instrumented results from three separate EPB tunneling projects in Singapore. This paper demonstrates that by coupling the trained neural network model to a spreadsheet optimization technique, the reliability assessment of the settlement serviceability limit state can be carried out using the first-order reliability method. With this method, it is possible to carry out sensitivity studies to examine the effect of the level of uncertainty of each parameter uncertainty on the probability that the serviceability limit state has been exceeded.